16 July 2020
Improving MOCVD tunnel junctions for gallium nitride μ-light emitting diodes
University of California Santa Barbara (UCSB) in the USA claims the lowest forward voltage for gallium nitride (GaN)-based micro-sized light-emitting diodes (μLEDs) with epitaxial tunnel junctions (TJs) grown by metal-organic chemical vapor deposition (MOCVD) [Panpan Li et al, Optics Express, vol28, p18707, 2020]. The voltage was only marginally higher than that achieved with indium-tin oxide (ITO) transparent conductive electrodes.
The author Mike Cooke is a freelance technology journalist who has worked in the semiconductor and advanced technology sectors since 1997.