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Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

Shubhra S. Pasayat1, Chirag Gupta1, Matthew S. Wong2, Ryan Ley3, Michael J. Gordon3, Steven P. DenBaars1,2, Shuji Nakamura1,2, Stacia Keller1 and Umesh K. Mishra1

Published 16 December 2020 • © 2020 The Japan Society of Applied Physics
Applied Physics Express, Volume 14, Number 1Citation Shubhra S. Pasayat et al 2021 Appl. Phys. Express 14 011004

 

Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

Shubhra S. Pasayat et al 2021 Appl. Phys. Express 14 011004

Abstract

Ultra-small red micro-LEDs (<10 μm) with measurable output power have proved difficult to demonstrate. The smallest state-of-the-art red micro-LEDs (AlInGaP) to have exhibited a decent output power of ~1.75 mW mm−2 are 20 μm × 20 μm in dimension. InGaN-based red micro-LED development has primarily been impeded due to the large lattice mismatch between the substrate and the quantum wells along with fabrication challenges such as low damage etching. In this work, we demonstrate 6 μm × 6 μm sized InGaN red micro-LEDs with an on-wafer external quantum efficiency of 0.2% and light output power reaching 2.1 mW mm−2.