15 October 2021
Relaxed InGaN for green/red light emission
University of California Santa Barbara (UCSB) in the USA has reported a simpler process for producing relaxed indium gallium nitride (InGaN) pseudo-substrates with a view to more efficient long-wavelength light-emitting devices in the green (500-565nm) and red (625-700nm) wavelength ranges [Philip Chan et al, Appl. Phys. Lett., v119, p131106, 2021]. Up to now, attempts to reduce strain in InGaN layers have been quite complex. The UCSB method used just MOCVD.
The work aimed to reduce the strain in InGaN layers and allow higher-temperature growth. Indium incorporation in GaN is reduced in strained material, an effect referred to as ‘composition pulling’. Lower-temperature growth is normally used to compensate for reduced indium incorporation. For example, red InGaN light-emitting diodes (LEDs) are typically grown by metal-organic chemical vapor deposition (MOCVD) at temperatures ranging from 700 to 765°C.
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