Panpan Li’s article, “Demonstration of ultra-small 5 x 5 µm2 607nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%,” has been featured on the cover of Applied Physics Letters.
Appl. Phys. Lett. 120, 041102 (2022); https://doi.org/10.1063/5.0078771
Panpan Li1, Hongjian Li1,a)hongjianli [at] ucsb.edu, Yunxuan Yang2, Haojun Zhang1, Pavel Shapturenka3, Matthew Wong1, Cheyenne Lynsky1, Mike Iza1, Michael J. Gordon3, James S. Speck1, Shuji Nakamura1,2, and Steven P. DenBaars1,2
Red micro-size light-emitting diodes (μLEDs) less than 10 × 10 μm2 are crucial for augmented reality (AR) and virtual reality (VR) applications. However, they remain very challenging since the common AlInGaP red μLEDs with such small size suffer from a dramatic reduction in the external quantum efficiency. In this work, we demonstrate ultra-small 5 × 5 μm2 607 nm amber μLEDs using InGaN materials, which show an EQE over 2% and an ultra-low reverse current of 10−9 A at −5 V. This demonstration suggests promising results of ultra-small InGaN μLEDs for AR and VR displays.
The authors acknowledge the Solid-State Lighting and Energy Electronics Center (SSLEEC) at UCSB for funding. A portion of this work was done at the UCSB nanofabrication facility.
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