Hsun-Ming Chang

Hsun-Ming Chang was born in Kaohsiung city, Taiwan. He received his Masters degree from the Graduate Institute of Photonics and Optoelectronics in 2017, and his Bachelors degree in Materials Science and Engineering in 2015, both from National Taiwan University, Taipei, Taiwan. In his graduate study, he focused on the research of 2D FETs, including black phosphorus FETs, 2D heterostructure devices and study on metal-2D semiconductors contacts, in collaboration with TSMC.