No.

 

Year

 

Title and Authors

 

Publisher

 

Category

1

 

1986

 

 "Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner and H.C. Lee

 

J. Crystal Growth, 77, 186

 

Refereed Conference Proceedings

2

 

1987

 

"The Effects of Hydrodynamics Interrupted Growth and Growth Temperature on the Interface Properties of AlGaAs/GaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition", S.P. DenBaars, H.C. Lee, A. Hariz, and P.D. Dapkus

 

Technical Program of the Electronic Materials Conference, paper N7, 50

 

Refereed Conference Proceedings

3

 

1987

 

"GaAs/AlGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy",S.P. DenBaars, C.A. Hariz, and P.D. Dapkus

 

Appl. Phys. Lett. 51, 1530

 

Journal

4

 

1987

 

"The Growth of AlGaAs/GaAs Heterostructures by Atomic Layer Epitaxy" Epitaxy of Semiconductor Layered Structures, S.P. DenBaars, A. Hariz, C.A. Beyler, B.Y. Maa, Q. Chen, and P.D. Dapkus

 

Mat. Res. Soc. Proceedings, Vol. 102, p. 527, Boston, MA

 

Refereed Conference Proceedings

5

 

1987

 

"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", S.P. DenBaars, P.D. Dapkus, Q. Chen, W.G. Jeong, and B.Y. Maa

 

Materials Research Society, Symposium C, Epitaxy of Semiconductor Layered Structures, (Paper C7.9), Boston, MA, December

 

Refereed Conference Proceedings

6

 

1987

 

"AlGaAs/GaAs Quantum Wells Grown by Atomic Layer Epitaxy", S.P. DenBaars, C.A. Beyler,A. Hariz, and P.D. Dapkus

 

Technical Digest Third Biennial OMVPE Workshop, (Paper A2), Brewster, MA, September

 

Conference Proceedings

7

 

1988

 

"Atomic Layer Epitaxy for the Growth of Heterostructure Devices", S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz, and K. Dzurko

 

Crystal Growth, 93, 195

 

Journal

8

 

1988

 

"Thermal and Laser Assisted Atomic Layer Epitaxy of Compound Semiconductors", S.P. DenBaars, P.D. Dapkus, J.S. Osinski, M. Zandian, C.A. Beyler, and K.M. Dzurko

 

Int. Symp. GaAs and Related Compounds, Atlanta, GA 1988, Inst. Phys. Conf. Ser. No. 96, 89

 

Refereed Conference Proceedings

9

 

1989

 

"Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, and A. Melas

 

J. Electrochem.  Soc., 136, No. 7, 2067

 

Journal

10

 

1989

 

"Minority Carrier Lifetimes in Undoped AlGaAs/GaAs Multiple Quantum Wells", A. Hariz, P.D. Dapkus, H.C. Lee, E.P. Menu, and S.P. DenBaars

 

Appl. Phys. Lett., 54, 635

 

Journal

11

 

1989

 

"The Role of Surface and Gas Phase Reactions in Atomic Layer  Epitaxy", P.D. Dapkus, S.P. DenBaars, Q. Chen, W.G. Jeong, and B.Y. Maa

 

Prog. Crystal Growth and Charact., 19, 137

 

Journal

12

 

1989

 

"Atomic Layer Epitaxy of Compound Semiconductors with Metalorganic Precursors", S. P. DenBaars and P.D. Dapkus

 

J. Crystal Growth, 98, 195

 

Journal

13

 

1990

 

"Atmospheric Atomic Layer Epitaxy", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars,

 

Acta Polytechnica Scandivica, Ch. 195, 39

 

Journal

14

 

1991

 

"Atmospheric Atomic Layer Epitaxy: Mechanisms and Applications", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars

 

J. Crystal Growth, 107, 73

 

Journal

15

 

1992

 

"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves", D.B. Young, D.I. Babic, S.P. DenBaars, and L.A. Coldren

 

Electronic Lett. 28, No.20, 1873

 

Journal

16

 

1992

 

"Growth of High Quality InxGa1-xAs/InP Quantum Wells with Tertiarybutylarsine and Tertiarybutylphosphine", M. P. Mack, C. M. Reaves, P. J. Corvini, S.P. DenBaars, M. S. Leonard, M. Mondry and J. L. Merz

 

Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper J2, p.39

 

Conference Proceedings

17

 

1992

 

"Fe-Doped Semi-Insulating InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine, Trimethylindium, and Ferrocene", P.J. Corvini, M. Hashemi, S.P. DenBaars, J.E. Bowers

 

Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper P4, p.54

 

Conference Proceedings

18

 

1992

 

"Wide tunability and large mode-suppression in a multisection semiconductor laser using sampled gratings", V.J. Jayaraman, L.A. Coldren, S.P. DenBaars, A. Mather, and P.D. Dapkus

 

Proceedings of the Integrated Photonics Research Conference, New Orleans, LA,  WF-1, pp. 54-55

 

Conference Proceedings

19

 

1992

 

"High Performance Heterojunction InGaAs/InP JFET grown by MOCVD using Tertiarybutylarsine and Tertiarybutylphosphine", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

 

P7, IEDM Tech. Digest, 311

 

Journal

20

 

1992

 

"Visible Light Emitting Diodes: Materials Growth and Properties" S.P. DenBaars,

 

Solid State Luminescence-Theory, Materials & Devices, Chapter 8, pp. 263-291. A.H. Kitai, editor ( Chapman and Hall, London, England )

 

Book Chapter

21

 

1993

 

"High Speed p+ GaInAs-n-InP Heterojunction JFETs (HJFETs) grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

 

IEEE Electron. Device Lett. 14,  No. 2., 60

 

Journal

22

 

1993

 

"High Speed Heterojunction JFETs grown by Non-Hydride MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

 

Proceedings ofUltrafast electronics and Optoelectronics Conference

 

Conference Proceedings

23

 

1993

 

"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine and Tertiarybutylphosphine", M. E. Heimbuch, A.L. Holmes, S.P. DenBaars, L.A. Coldren, and J.E. Bowers

 

Electronics Letters, 29, No. 4, pp.340-341

 

Journal

24

 

1993

 

"Novel High Power Heterojunction JFETs (HJFETs) Grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

 

IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France,  ISBN 0-7803-0993-6,  pp. 375-378, IEEE Society, Piscataway, New Jersey

 

Conference Proceedings

25

 

1993

 

"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid Group V Sources", M. E. Heimbuch A.L. Holmes, Jr., S.P. DenBaars, L.A. Coldren, and J.E. Bowers

 

IEEE Proceedings of the 5th Intl. InP and Related Materials  Conf.,Paris, France,  ISBN 0-7803-0993-6,  pp. 239-242, IEEE Society, Piscataway, New Jersey

 

Conference Proceedings

26

 

1993

 

"Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs(11) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnatmurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. DenBaars

 

Mat. Research Soc. Proceedings, San Francisco, April

 

Refereed Conference Proceedings

27

 

1993

 

"35 GHz fmax InP JFET Grown by MOCVD Using Tertiarybutylphosphine (TBP)", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

 

Electronics Lett. 29, No. 4, pp.372-374

 

Journal

28

 

1993

 

"Low Threshold Strained InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown  with TBA and TBP", S.P. DenBaars, A.L.Holmes, JR., M. E. Heimbuch, and C. M. Reaves

 

Late News paper, Extended Abstracts of European Workshop on MOVPE-V, pp. E-19-21, Malmo, Sweden, June

 

Conference Proceedings

29

 

1993

 

"Strained InGaAsP Single Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", A.L. Holmes, M.E. Heimbuch, and S.P. DenBaars

 

Appl. Physics Lettters, V63, N25:3417-3419, December

 

Journal

30

 

1993

 

"Direct Formation of Quantum-sized Dots from Uniform Coherent Islands of InGaAs on GaAs Surfaces", D.Leonard, M. Krishnamurty, C.M. Reaves, P.M. Petroff, and S.P. DenBaars

 

 , V63, N23:3203-3205, December

 

Journal

33

 

1993

 

"Low Threshold 1.5 Mu-M Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", M. E. Heimbuch, A. L. Holmes, M. P. Mack, S. P. DenBaars

 

Electronics Letters, V29, N4: 340-342

 

Journal

34

 

1993

 

"35 GHz F (Max) InP JFet Grown by Non-Hydride MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra

 

Electronics Letters, V29, N4: 372-373

 

Journal

35

 

1993

 

"High-Speed P+ GaInAs-N InP Heterojunction JFets (HJFETS) Grown by MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra

 

IEEE Electron Device Letters, V14, N2: 60-62

 

Journal

36

 

1993

 

"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550 NM) Lightwaves", D. B. Young, D. I. Babic, S. P. DenBaars, L. A. Coldren

 

Electronics Letters, V28, N20: 1873-1874

 

Journal

37

 

1993

 

"Photoluminescence Studies of a Quantum Well Modulated  by Facetting on GaAs(110) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnamurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, and S.P. DenBaars

 

Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society. Symposium Proceedings Vol. 312)

 

Conference Proceedings

38

 

1994

 

"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.5 5µm InxGa1-xAsInP Quantum Well Lasers", M. Heimbuch, A.L. Holmes, C.M. Reaves, S.P. DenBaars, and L.A. Coldren

 

Journal  of Electronic Materials, V23, N2:87-91, February

 

Journal

39

 

1994

 

"High Performance InP JFET grown by Metalorganic Chemical Vapor Deposition using Tertiarybutylphosphine (TBP) as the Phosphorous Source", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

 

Journal  of Electronic Materials, V23, N2:233-237, February

 

Journal

40

 

1994

 

"Formation of Coherently Strained Self-Assembled InP Quantum Islands on InGaP/GaAs", S. P. DenBaars, C. M. Reaves, V. Bresslerhill, S. Varma

 

Journal of Crystal Growth, V145, N1-4: 721-727

 

Journal

41

 

1994

 

"Flow Modulation Epitaxy of GaXIn(1-X)As/AlAs Heterostructures on InP for Resonant Tunneling Diodes”, B.P. Keller, J.C. Yen, A.L.Homes, S.P.DenBaars, U.K.Mishra

 

Applied Surface Science, V82-3, 126-131

 

Journal

42

 

1994

 

"Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room-Temperature Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, E. Hu, S. P. DenBaars

 

Journal of Vacuum Science and Technology B, V12, N6: 3704-3707

 

Journal

43

 

1994

 

"MBE and MOCVD Growth and Properties of Self-Assembling Quantum Dot Arrays in III-V Semiconductor Structures", P. M. Petroff, S. P. DenBaars

 

Superlattices and Microstructures, V15, N1: 15-21

 

Journal

44

 

1994

 

"GaXIn1-XAs/AlAs Resonant Tunneling Diodes Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", B. P. Keller, J. C. Yen, S. P. DenBaars, U. K. Mishra

 

Applied Physics Letters, V65, N17: 2159-2161

 

Journal

45

 

1994

 

"Widely Tunable Continuous-Wave InGaAsP/LnP Sampled Grating Lasers", V. Jayaraman, M. E. Heimbuch, L. A. Coldren, S. P. DenBaars

 

Electronics Letters, V30, N18: 1492-1494.

 

Journal

46

 

1994

 

"Field-Induced Guide Antiguide Modulators on InGaAsP/InP", S. L. Lee, M. E. Heimbuch, C. J. Mahon, N. Dagli

 

Electronics Letters, V30, N12:954-956

 

Journal

47

 

1994

 

"Passivation of InGaAs/InP Surface Quantum Wells by Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, J. Merz, S. P. DenBaars

 

Applied Physics Letters, V64, N20: 2658-2660

 

Journal

48

 

1994

 

"Continuous-Wave Operation of Sampled Grating Tunable Lasers with 10mwatt Output Power, >60nm Tuning, and Monotonic Tuning CVharacteristics", V.J. Jayaraman, M.E. Heimbuch, L.A. Coldren, and S.P. DenBaars

 

IEEE Proceedings of the 6th Intl. InP and Related Materials Conf

 

Conference Proceedings

49

 

1994

 

"Compressively Strained 1.55µm InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown with TBA and TBP", S.P. DenBaars, A.L. Holmes, M.H. Heimbuch

 

SPIE Proceedings of the Optoelectronics/Laser Conf.

 

Conference Proceedings

50

 

1994

 

"Coupling of Terahertz Radiation with Wispering Gallery Mode Microdisk Lasers", K.B. Nordstrom, S.J. Allen, M.E. Heimbuch, S.P. DenBaars, A.F.J. Levi

 

Proceedings of the Conf  on Laser and Electro-Optics

 

Conference Proceedings

51

 

1994

 

 "GaInAs/GaInP Double Barrier Structures:  Growth and Application in Tunneling Diodes", C.M. Reaves, J.C. Yen, N.A. Cevallos, U.K. Mishra, and S.P. DenBaars

 

Compound Semiconductor Epitaxy, edited by C.W. Tu, L.A. Kolodziejski, and V.R. McCrary (Materials Research Society Symposium Proceedings Vol. 320), 147-152

 

Conference Proceedings

52

 

1995

 

"Characterization of MOCVD-Grown InP on InGaP/GaAs", C. M. Reaves, V. Bresslerhill, S. Varma, W. H. Weinburg, S. P. DenBaars

 

Surface Science, V326, N3: 209-217

 

Journal

53

 

1995

 

"Indium Phosphide (INP) Based Heterostructure Materials and Devices Grown by MOCVD Using Tertiarybutylarsine (TBA) Tertiarybutylphosphine (TBP)", S. P. DenBaars, A. L. Holmes, M. E. Heimbuch, V. J. Jayaraman

 

Journal of the Korean Physical Society, V28, S: S37-S42.

 

Journal

54

 

1995

 

"Low-Temperature PD Bonding of III-V Semiconductors", I. H. Tan, C. Reaves, A. L. Holmes, E. L. Hu, S. P. DenBaars

 

Electronics Letters, V31, N7: 588-589

 

Journal

55

 

1995

 

"Effect of Atmospheric Pressure MOCVD Growth Conditions on UV Band-Edge Photoluminescence in GAn Thin Films", B. P. Keller, S. Keller, D. Kapolnek, M. Kato, S. P. DenBaars

 

Electronic Letters, V31, N13: 1102-1103

 

Journal

56

 

1995

 

"On the Interface Resistance of Regrwon GaInAs on InP", K. Hiziloglu, M.M. Hashemi, S.P. DenBaars, and U.K. Mishra

 

Solid State Electronics, V38, N4: 905-908

 

Journal

57

 

1995

 

"Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire", D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, v67, N11: 1541-1543

 

Journal

58

 

1995

 

 "InP as Self Assembled Quantum Structures", C.M. Reaves, N.A. Cevallos, G.C. Hsueh, Y.M. Cheng, W.H. Weinberg, P.M. Petroff, and S.P. DenBaars

 

Proceeding of the Seventh International Conference on Indium Phosphide and Related Materials.

 

Conference Proceedings

59

 

1995

 

"Nanoscale characterization of InP islands on InGaP(001)", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg

 

OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), vol. 5, 36-38

 

Journal

60

 

1993

 

“Luminescence Enhancement of  InGaAs/InP Surface Quantum Wells by Room –Temperature  Ion-Gun “, Y.L. Chang, I.H. Tan. C.M. Reaves, J. Merz, E. Hu, and S.P. DenBaars

 

Phys. Rev. Letters.

 

Journal

61

 

1994

 

“GaInAs/GaInP Double Barrier Structure: Growth and Application to Tunneling Devices”, C.M. Reaves, J. Yen, M.S. Leonard, A.L. Holmes, U.K. Mishra, S.P. DenBaars

 

Materials Res. Soc., 1994, 147-152

 

Conference Proceedings

62

 

1995

 

"MOCVD Growth of High Optical Quality and High Mobility GaN", B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars

 

Journal Electronic Materials, Nov. 1995 V24 N11:1707-1709.

 

Journal

63

 

1996

 

"The Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films", B. Heying, X. H. Wu, S. Keller, Y. Li, D Kapolnek, B. Keller, S. P. DenBaars, J. S. Speck

 

Applied Physics Letters, 29 Jan. 1996, V68 N5:643-645

 

Journal

 

 

 

 

 

 

 

 

 

64

 

1995

 

"Growth and Characterization of InGaN/GaN Double Heterostructure LEDs Grown by MOCVD", S. Keller, B. P. Keller, Y.-F. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. K. Mishra, S. P. DenBaars

 

Special Issue on Proceedings of Topical Workshop on III-V Nitrides Pergamon.

 

Conference Proceedings

65

 

1995

 

"Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100)", C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars

 

Journal of Electronic Materials, Nov. 1995, V24, N11:1605-1609

 

Journal

66

 

1995

 

"Characterization of InP Islands on InGaP/GaAs(001):  Effect of Deposition Temperature", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg

 

Surface Science, Nov 1, 1995, V341 N1-2: 29-39

 

Journal

67

 

1996

 

"Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Metal-Organic Chemical Vapor Deposition", S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, X. H. Wu, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars

 

Applied Physics Letters, 11 Mar. 1996, V68 N11: 1525-1527

 

Journal

68

 

1996

 

"Effect of the  Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire", S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars.

 

Japanese J. Appl. Physics, 1 March 1996, V35, N3A: L285-8.

 

Journal

69

 

1996

 

"Nucleation Layer Evolution in Metal-Organic Chemical Vapor Deposition Grown GaN", X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck.

 

Applied Physics Letters, 4 March1996, V68 N10: 1371-1373.

 

Journal

70

 

1995

 

“High Performance AlAs/Ga/sub x/In/sub 1-x/As Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition,” J.C. Yen, B.P. Keller, S.P. DenBaars, U.K. Mishra.

 

Journal of Electronic Materials, Oct. 1995. V24, N10:1387-1390.

 

Journal

71

 

1995

 

“Analysis of InP Etched Surfaces Using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures,” Yu, DG; Keller, B.P.; Holmes, A.L., Jr.; Hu, E.L.; and others.

 

Journal of Vacuum Science & Technology B, Nov-Dec. 1995, V13, N6:2381-2385.

 

Journal

72

 

1995

 

“Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with tertiarybutylphosphine (TBP). Itaya, K.; Holmes, A.L., Jr.; Keller, S.; Hummel, S.G.; Coldren, L.A. and DenBaars, S.P.

 

Japanese Journal of Applied Physics, Part 2 (Letters), 15 Nov. 1995, V34, N11B: L1540-1542.

 

 

Journal

73

 

1995

 

“From research to manufacture-the evolution of MOCVD,” Grodzinski, P.; DenBaars, S.P.; Lee, H.C.

 

JOM, Dec. 1995, V47, N12:

pp. 25-32.

 

Journal

74

 

1996

 

“Field emission from selectively regrown GaN pyramids,”  Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

 

IEEE, 1996, pp.152-153.

 

Conference Proceedings

75

 

1996

 

“GaN HFETs and MODFETs with very high breakdown voltage and large transconductance,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; Mishra, U.K. and DenBaars, S.P.

 

IEEE, 1996, pp. 60-61.

 

Conference Proceedings

76

 

1996

 

“Ion damage propagation in dry-etched InP-based structures,” Hu, E.L.; Yu, D.G.; Chen, C.-H.; Keller, B.; and DenBaars, S.P.

 

IEEE, 1996, pages 107-110.

 

Conference Proceedings

77

 

1996

 

“InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

IEEE, 1996, pp. 157-158 Volume 2.

 

Conference Proceedings

78

 

1996

 

“Cleaved facets in GaN by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E.; Speck, J.S. and DenBaars, S.P.

 

Materials Res. Soc, 1996,

pp. 165-170.

 

Conference Proceedings

79

 

1996

 

“Long-wavelength vertical-cavity surface-emitting laser diodes,” Babic, D.I.; Jayaraman, V.; Margalit, N.M.; Streubel, K.; and DenBaars, S.P.

 

Materials Research. Society, 1996, pp. 63-74.

 

Conference Proceedings

80

 

1996

 

“Absolute internal quantum efficiency of an InGaN/GaN quantum well,” Reese, C.; Yablonovitch, E.; Keller, S.; Keller, B.; Mishra, U.K. and DenBaars, S.P.

 

 Opt. Soc. America, 1996, p.  472.

 

 

81

 

1996

 

“InP-based devices and their applications for merged FET-HBT technologies,” Parikh, P.; Kiziloglu, K.; Mondry, M.; Chavarkar, P.; Mishra, U. and DenBaars, S.

 

Microwave and Optical Technology Letters, 20 Feb. 1996, V11, N3: pp. 121-125.

 

Journal

82

 

1996

 

“Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP.” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

Electronics Letters, 14 March 1996, V32, N6: pp.  593-594.

 

Journal

83

 

1996

 

“Low interface trap density for remote plasma deposited SiO/sub 2/ on n-type GaN,” Casey, H.C., Jr.; Fountain, G.G.; Alley, R.G.; Keller, B.P.; and DenBaars, S.

 

Applied Physics Letters, 25 March 1996, V68, N13: pp. 1850-1852.

 

Journal

84 (a)

 

1996

 

“Cleaved GaN facets by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E. and DenBaars, S.P.

 

Applied Physics Letters, 8 April 1996, V68, N15: pp. 2147-2149.

 

Journal

84 (b)

 

1996

 

“Growth and Characterization of bulk InGaN films and quantum wells” S. Keller, B. P. Keller,   D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. DenBaars

 

Applied Physics Letters, 27 May 1996, V68, N22: pp. 3147-3149

 

Journal

85

 

1996

 

“InP-based multiple quantum well structures grown with tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP): effects of growth interruptions on structural and optical properties. Holmes, A.L., Jr.; Heimbuch, M.E.; Fish, G.; Coldren, L.A.; and DenBaars, S.P.

 

Journal of Electronic Materials, June 1996, V25, N6: pp. 965-971.

 

Journal

86

 

1996

 

“A new FET-based integrated circuit technology: the SASSFET,” Parikh, P.A.; Jiang, W.N.; Chavarkar, P.M.; Kiziloglu, K.; Mishra,, U.K. and DenBaars, S.P.

 

IEEE Electron Device Letters, July 1996, V17, N7: pp. 375-357.

 

Journal

87

 

1996

 

“Photocurrent decay in n-type GaN thin films,” Qiu, C.H.; Melton, W.; Leksono, M.W.; Pankove, J.I.; Keller, B.P. and DenBaars, S.P.

 

Applied Physics Letters, 26 August 1996, V69, N9: pp. 1282-1284.

 

Journal

88

 

1996

 

“InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range,” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

 Electronics Letters, 29 Aug. 1996, V32, N18: pp. 1697-1699.

 

Journal

89

 

1996

 

“Control of III-V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness,” Gaffney, M.; Reaves, C.M.; Smith, R.S.; Holmes, A.L., Jr.; and DenBaars, S.P.

 

Journal of Crystal Growth, Sept. 1996, V167, N1-2: pp. 8-16.

 

Journal

90

 

1996

 

“Measured microwave power performance of AlGaN/GaN MODFET,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.

 

IEEE Electron Device Letters, Sept. 1996, V17, N9: pp. 455-457.

 

Journal

91

 

1996

 

“Very high breakdown voltage and large transconductance realized on GaN heterojunction  field effect transistors,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.

 

Applied Physics Letters, 2 Sept. 1996, V69, N10: pp. 1438-1440.

 

Journal

92

 

1996

 

“Defect structure of metal-organic chemical vapor deposition-grown  epitaxial (0001) GaN/Al/sub 2/O/sub 3/,” Wu, X.H.; Brown, L.M.; Kapolnek, D.; Keller, S.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.

 

Journal of Applied Physics, 15 Sept. 1996, V80, N6: pp. 3228-3237.

 

Journal

93

 

1996

 

“Radiative recombination lifetime measurements of InGaN single quantum      well,” Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M.; Bowers, J.E. & DenBaars, S.P.

 

Applied Physics Letters, 23 Sept. 1996, V69, N13: pp. 1936-1938.

 

Journal

94

 

1996

 

“Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100),” Hsueh, G.C.; Reaves, C.M.; DenBaars, S.P.; Weinberg, W.H.

 

Surface Science, 10 Oct. 1996, V366, N1: pp. 129-139.

 

Journal

95

 

1996

 

“High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts,” Shealy, J.B.; Matloubian, M.; Liu, T.Y.; Thompson, M.A.; Mishra, U.K. and DenBaars, S.P.

 

IEEE Electron Device Letters, Nov. 1996, V17, N11: pp. 540-542.

 

Journal

96

 

1996

 

“Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by      ballistic-electron-emission microscopy,” O'Shea, J.J.; Reaves, C.M.; DenBaars, S.P.; Chin, M.A.; and Narayanamurti, V.

 

Applied Physics Letters, 11 Nov. 1996, V69, N20: pp. 3022-3024.

 

Journal

97

 

1996

 

“45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 

Applied Physics Letters, 18 Nov. 1996, V69, N21: pp. 3131-3133.

 

Journal

98

 

1996

 

“Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition,” Wu, X.H.; Fini, P.; Keller, S.; Tarsa, E.J.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.

 

Japanese Journal of Applied Physics, Part 2 (Letters), 15 Dec. 1996, V35, N12B: L1648-1651

 

Journal

99

 

1996

 

“Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface,” Reaves, C.M.; Pelzel, R.I.; Hsueh, G.C.; Weinberg, W.H.; and DenBaars, S.P.

 

Applied Physics Letters, 16 Dec. 1996, V69, N25: pp. 3878-3880.

 

Journal

100

 

1996

 

“Real-time composition and thickness control techniques in a metalorganic chemical vapor deposition process,” Gaffney, M.S.; Reaves, C.M.; Holmes, A.L., Jr.; Smith, R.S.; and DenBaars, S.P.

 

Materials Res. Soc, 1996. pp. 133-138.

 

Conference Proceedings

101

 

1997

 

“Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition,” Keller, S.; Keller, B.; Kapolnek, D.; Mishra, U.; & DenBaars, S.

 

Journal of Crystal Growth, Jan. 1997, V170, N1-4: pp. 349-352.

 

Journal

102

 

1997

 

“Selective area epitaxy of GaN for electron field emission devices,” Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; and Mishra, U.K. and DenBaars, S.P.

 

Journal of Crystal Growth, Jan. 1997, V170, N.1-4: pp.  340-343.

 

Journal

103

 

1997

 

“Ballistic electron emission microscopy study of transport in GaN thin films,” Brazel, E.G.; Chin, M.A.; Narayanamurti, V.; Kapolnek, D.; and Mishra, U.K. and DenBaars, S.P.

 

Applied Physics Letters, 20 Jan. 1997, V70, N3: pages 330-332.

 

Journal

104

 

1997

 

“Selective-area regrowth of GaN field emission tips,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

 

Solid-State Electronics, Feb. 1997, V41, N2: pp. 243-245.

 

Journal

105

 

1997

 

“Low resistance ohmic contact to n-GaN with a separate layer method,” Wu, Y.-F.; Jiang, W.-N.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

 

Solid-State Electronics, Feb. 1997, V41, N2: pp. 165-168.

 

Journal

106

 

1997

 

“Comparing ion damage in GaAs and InP,” Yu, D.G.; Chen, C.-H.; Holmes, A.L., Jr.; Hu, E.L.; and DenBaars, S.P.

 

Microelectronic Engineering, Feb. 1997, V35, N1-4: pp. 95-98.

 

Journal

107

 

1997

 

“GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage,” Nguyen, N.X.; Keller, B.P.; Keller, S.; Wu, Y.-F.; Mishra, U.K. and DenBaars, S.P.

 

Electronics Letters, 13 Feb. 1997, V33, N4: pp. 334-335.

 

Journal

108

 

1997

 

“Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration,” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Krishnankutty, S.; Keller, S.; Abare, A.; Coldren, L.; Mishra, U. & DenBaars, S.

 

Journal of Applied Physics, 15 Feb. 1997, V81, N4: pp. 2021-2023.

 

Journal

109

 

1997

 

“Accurate mobility and carrier concentration analysis for GaN,” Look, D.C.; Sizelove, J.R.; Keller, S.; Wu, Y.F.; Mack, M.; Mishra, U.K. & DenBaars, S.P.

 

Solid State Communications, April 1997, V102, N4: pp. 297-300.

 

Journal

110

 

1997

 

“Femtosecond studies of carrier dynamics in InGaN,” Sun, C.-K.; Vallee, F.; Keller, S.; Bowers, J.E.; and DenBaars, S.P.

 

Applied Physics Letters, 14 April 1997, V70, N15: pp. 2004-2006.

 

Journal

111

 

1997