Publications | Solid State Lighting & Energy Electronics Center

No.	Year	Title and Authors	Publisher	Category
1	1986	"Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner and H.C. Lee	J. Crystal Growth, 77, 186	Refereed Conference Proceedings
2	1987	"The Effects of Hydrodynamics Interrupted Growth and Growth Temperature on the Interface Properties of AlGaAs/GaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition", S.P. DenBaars, H.C. Lee, A. Hariz, and P.D. Dapkus	Technical Program of the Electronic Materials Conference, paper N7, 50	Refereed Conference Proceedings
3	1987	"GaAs/AlGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy",S.P. DenBaars, C.A. Hariz, and P.D. Dapkus	Appl. Phys. Lett. 51, 1530	Journal
4	1987	"The Growth of AlGaAs/GaAs Heterostructures by Atomic Layer Epitaxy" Epitaxy of Semiconductor Layered Structures, S.P. DenBaars, A. Hariz, C.A. Beyler, B.Y. Maa, Q. Chen, and P.D. Dapkus	Mat. Res. Soc. Proceedings, Vol. 102, p. 527, Boston, MA	Refereed Conference Proceedings
5	1987	"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", S.P. DenBaars, P.D. Dapkus, Q. Chen, W.G. Jeong, and B.Y. Maa	Materials Research Society, Symposium C, Epitaxy of Semiconductor Layered Structures, (Paper C7.9), Boston, MA, December	Refereed Conference Proceedings
6	1987	"AlGaAs/GaAs Quantum Wells Grown by Atomic Layer Epitaxy", S.P. DenBaars, C.A. Beyler,A. Hariz, and P.D. Dapkus	Technical Digest Third Biennial OMVPE Workshop, (Paper A2), Brewster, MA, September	Conference Proceedings
7	1988	"Atomic Layer Epitaxy for the Growth of Heterostructure Devices", S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz, and K. Dzurko	Crystal Growth, 93, 195	Journal
8	1988	"Thermal and Laser Assisted Atomic Layer Epitaxy of Compound Semiconductors", S.P. DenBaars, P.D. Dapkus, J.S. Osinski, M. Zandian, C.A. Beyler, and K.M. Dzurko	Int. Symp. GaAs and Related Compounds, Atlanta, GA 1988, Inst. Phys. Conf. Ser. No. 96, 89	Refereed Conference Proceedings
9	1989	"Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, and A. Melas	J. Electrochem. Soc., 136, No. 7, 2067	Journal
10	1989	"Minority Carrier Lifetimes in Undoped AlGaAs/GaAs Multiple Quantum Wells", A. Hariz, P.D. Dapkus, H.C. Lee, E.P. Menu, and S.P. DenBaars	Appl. Phys. Lett., 54, 635	Journal
11	1989	"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", P.D. Dapkus, S.P. DenBaars, Q. Chen, W.G. Jeong, and B.Y. Maa	Prog. Crystal Growth and Charact., 19, 137	Journal
12	1989	"Atomic Layer Epitaxy of Compound Semiconductors with Metalorganic Precursors", S. P. DenBaars and P.D. Dapkus	J. Crystal Growth, 98, 195	Journal
13	1990	"Atmospheric Atomic Layer Epitaxy", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars,	Acta Polytechnica Scandivica, Ch. 195, 39	Journal
14	1991	"Atmospheric Atomic Layer Epitaxy: Mechanisms and Applications", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars	J. Crystal Growth, 107, 73	Journal
15	1992	"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves", D.B. Young, D.I. Babic, S.P. DenBaars, and L.A. Coldren	Electronic Lett. 28, No.20, 1873	Journal
16	1992	"Growth of High Quality InxGa1-xAs/InP Quantum Wells with Tertiarybutylarsine and Tertiarybutylphosphine", M. P. Mack, C. M. Reaves, P. J. Corvini, S.P. DenBaars, M. S. Leonard, M. Mondry and J. L. Merz	Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper J2, p.39	Conference Proceedings
17	1992	"Fe-Doped Semi-Insulating InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine, Trimethylindium, and Ferrocene", P.J. Corvini, M. Hashemi, S.P. DenBaars, J.E. Bowers	Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper P4, p.54	Conference Proceedings
18	1992	"Wide tunability and large mode-suppression in a multisection semiconductor laser using sampled gratings", V.J. Jayaraman, L.A. Coldren, S.P. DenBaars, A. Mather, and P.D. Dapkus	Proceedings of the Integrated Photonics Research Conference, New Orleans, LA, WF-1, pp. 54-55	Conference Proceedings
19	1992	"High Performance Heterojunction InGaAs/InP JFET grown by MOCVD using Tertiarybutylarsine and Tertiarybutylphosphine", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	P7, IEDM Tech. Digest, 311	Journal
20	1992	"Visible Light Emitting Diodes: Materials Growth and Properties" S.P. DenBaars,	Solid State Luminescence-Theory, Materials & Devices, Chapter 8, pp. 263-291. A.H. Kitai, editor ( Chapman and Hall, London, England )	Book Chapter
21	1993	"High Speed p+ GaInAs-n-InP Heterojunction JFETs (HJFETs) grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	IEEE Electron. Device Lett. 14, No. 2., 60	Journal
22	1993	"High Speed Heterojunction JFETs grown by Non-Hydride MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	Proceedings ofUltrafast electronics and Optoelectronics Conference	Conference Proceedings
23	1993	"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine and Tertiarybutylphosphine", M. E. Heimbuch, A.L. Holmes, S.P. DenBaars, L.A. Coldren, and J.E. Bowers	Electronics Letters, 29, No. 4, pp.340-341	Journal
24	1993	"Novel High Power Heterojunction JFETs (HJFETs) Grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 375-378, IEEE Society, Piscataway, New Jersey	Conference Proceedings
25	1993	"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid Group V Sources", M. E. Heimbuch A.L. Holmes, Jr., S.P. DenBaars, L.A. Coldren, and J.E. Bowers	IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 239-242, IEEE Society, Piscataway, New Jersey	Conference Proceedings
26	1993	"Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs(11) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnatmurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. DenBaars	Mat. Research Soc. Proceedings, San Francisco, April	Refereed Conference Proceedings
27	1993	"35 GHz fmax InP JFET Grown by MOCVD Using Tertiarybutylphosphine (TBP)", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	Electronics Lett. 29, No. 4, pp.372-374	Journal
28	1993	"Low Threshold Strained InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP", S.P. DenBaars, A.L.Holmes, JR., M. E. Heimbuch, and C. M. Reaves	Late News paper, Extended Abstracts of European Workshop on MOVPE-V, pp. E-19-21, Malmo, Sweden, June	Conference Proceedings
29	1993	"Strained InGaAsP Single Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", A.L. Holmes, M.E. Heimbuch, and S.P. DenBaars	Appl. Physics Lettters, V63, N25:3417-3419, December	Journal
30	1993	"Direct Formation of Quantum-sized Dots from Uniform Coherent Islands of InGaAs on GaAs Surfaces", D.Leonard, M. Krishnamurty, C.M. Reaves, P.M. Petroff, and S.P. DenBaars	, V63, N23:3203-3205, December	Journal
33	1993	"Low Threshold 1.5 Mu-M Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", M. E. Heimbuch, A. L. Holmes, M. P. Mack, S. P. DenBaars	Electronics Letters, V29, N4: 340-342	Journal
34	1993	"35 GHz F (Max) InP JFet Grown by Non-Hydride MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra	Electronics Letters, V29, N4: 372-373	Journal
35	1993	"High-Speed P+ GaInAs-N InP Heterojunction JFets (HJFETS) Grown by MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra	IEEE Electron Device Letters, V14, N2: 60-62	Journal
36	1993	"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550 NM) Lightwaves", D. B. Young, D. I. Babic, S. P. DenBaars, L. A. Coldren	Electronics Letters, V28, N20: 1873-1874	Journal
37	1993	"Photoluminescence Studies of a Quantum Well Modulated by Facetting on GaAs(110) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnamurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, and S.P. DenBaars	Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society. Symposium Proceedings Vol. 312)	Conference Proceedings
38	1994	"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.5 5µm InxGa1-xAsInP Quantum Well Lasers", M. Heimbuch, A.L. Holmes, C.M. Reaves, S.P. DenBaars, and L.A. Coldren	Journal of Electronic Materials, V23, N2:87-91, February	Journal
39	1994	"High Performance InP JFET grown by Metalorganic Chemical Vapor Deposition using Tertiarybutylphosphine (TBP) as the Phosphorous Source", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	Journal of Electronic Materials, V23, N2:233-237, February	Journal
40	1994	"Formation of Coherently Strained Self-Assembled InP Quantum Islands on InGaP/GaAs", S. P. DenBaars, C. M. Reaves, V. Bresslerhill, S. Varma	Journal of Crystal Growth, V145, N1-4: 721-727	Journal
41	1994	"Flow Modulation Epitaxy of GaXIn(1-X)As/AlAs Heterostructures on InP for Resonant Tunneling Diodes”, B.P. Keller, J.C. Yen, A.L.Homes, S.P.DenBaars, U.K.Mishra	Applied Surface Science, V82-3, 126-131	Journal
42	1994	"Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room-Temperature Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, E. Hu, S. P. DenBaars	Journal of Vacuum Science and Technology B, V12, N6: 3704-3707	Journal
43	1994	"MBE and MOCVD Growth and Properties of Self-Assembling Quantum Dot Arrays in III-V Semiconductor Structures", P. M. Petroff, S. P. DenBaars	Superlattices and Microstructures, V15, N1: 15-21	Journal
44	1994	"GaXIn1-XAs/AlAs Resonant Tunneling Diodes Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", B. P. Keller, J. C. Yen, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V65, N17: 2159-2161	Journal
45	1994	"Widely Tunable Continuous-Wave InGaAsP/LnP Sampled Grating Lasers", V. Jayaraman, M. E. Heimbuch, L. A. Coldren, S. P. DenBaars	Electronics Letters, V30, N18: 1492-1494.	Journal
46	1994	"Field-Induced Guide Antiguide Modulators on InGaAsP/InP", S. L. Lee, M. E. Heimbuch, C. J. Mahon, N. Dagli	Electronics Letters, V30, N12:954-956	Journal
47	1994	"Passivation of InGaAs/InP Surface Quantum Wells by Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, J. Merz, S. P. DenBaars	Applied Physics Letters, V64, N20: 2658-2660	Journal
48	1994	"Continuous-Wave Operation of Sampled Grating Tunable Lasers with 10mwatt Output Power, >60nm Tuning, and Monotonic Tuning CVharacteristics", V.J. Jayaraman, M.E. Heimbuch, L.A. Coldren, and S.P. DenBaars	IEEE Proceedings of the 6th Intl. InP and Related Materials Conf	Conference Proceedings
49	1994	"Compressively Strained 1.55µm InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown with TBA and TBP", S.P. DenBaars, A.L. Holmes, M.H. Heimbuch	SPIE Proceedings of the Optoelectronics/Laser Conf.	Conference Proceedings
50	1994	"Coupling of Terahertz Radiation with Wispering Gallery Mode Microdisk Lasers", K.B. Nordstrom, S.J. Allen, M.E. Heimbuch, S.P. DenBaars, A.F.J. Levi	Proceedings of the Conf on Laser and Electro-Optics	Conference Proceedings
51	1994	"GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes", C.M. Reaves, J.C. Yen, N.A. Cevallos, U.K. Mishra, and S.P. DenBaars	Compound Semiconductor Epitaxy, edited by C.W. Tu, L.A. Kolodziejski, and V.R. McCrary (Materials Research Society Symposium Proceedings Vol. 320), 147-152	Conference Proceedings
52	1995	"Characterization of MOCVD-Grown InP on InGaP/GaAs", C. M. Reaves, V. Bresslerhill, S. Varma, W. H. Weinburg, S. P. DenBaars	Surface Science, V326, N3: 209-217	Journal
53	1995	"Indium Phosphide (INP) Based Heterostructure Materials and Devices Grown by MOCVD Using Tertiarybutylarsine (TBA) Tertiarybutylphosphine (TBP)", S. P. DenBaars, A. L. Holmes, M. E. Heimbuch, V. J. Jayaraman	Journal of the Korean Physical Society, V28, S: S37-S42.	Journal
54	1995	"Low-Temperature PD Bonding of III-V Semiconductors", I. H. Tan, C. Reaves, A. L. Holmes, E. L. Hu, S. P. DenBaars	Electronics Letters, V31, N7: 588-589	Journal
55	1995	"Effect of Atmospheric Pressure MOCVD Growth Conditions on UV Band-Edge Photoluminescence in GAn Thin Films", B. P. Keller, S. Keller, D. Kapolnek, M. Kato, S. P. DenBaars	Electronic Letters, V31, N13: 1102-1103	Journal
56	1995	"On the Interface Resistance of Regrwon GaInAs on InP", K. Hiziloglu, M.M. Hashemi, S.P. DenBaars, and U.K. Mishra	Solid State Electronics, V38, N4: 905-908	Journal
57	1995	"Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire", D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck	Applied Physics Letters, v67, N11: 1541-1543	Journal
58	1995	"InP as Self Assembled Quantum Structures", C.M. Reaves, N.A. Cevallos, G.C. Hsueh, Y.M. Cheng, W.H. Weinberg, P.M. Petroff, and S.P. DenBaars	Proceeding of the Seventh International Conference on Indium Phosphide and Related Materials.	Conference Proceedings
59	1995	"Nanoscale characterization of InP islands on InGaP(001)", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg	OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), vol. 5, 36-38	Journal
60	1993	“Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room –Temperature Ion-Gun “, Y.L. Chang, I.H. Tan. C.M. Reaves, J. Merz, E. Hu, and S.P. DenBaars	Phys. Rev. Letters.	Journal
61	1994	“GaInAs/GaInP Double Barrier Structure: Growth and Application to Tunneling Devices”, C.M. Reaves, J. Yen, M.S. Leonard, A.L. Holmes, U.K. Mishra, S.P. DenBaars	Materials Res. Soc., 1994, 147-152	Conference Proceedings
62	1995	"MOCVD Growth of High Optical Quality and High Mobility GaN", B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars	Journal Electronic Materials, Nov. 1995 V24 N11:1707-1709.	Journal
63	1996	"The Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films", B. Heying, X. H. Wu, S. Keller, Y. Li, D Kapolnek, B. Keller, S. P. DenBaars, J. S. Speck	Applied Physics Letters, 29 Jan. 1996, V68 N5:643-645	Journal

64	1995	"Growth and Characterization of InGaN/GaN Double Heterostructure LEDs Grown by MOCVD", S. Keller, B. P. Keller, Y.-F. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. K. Mishra, S. P. DenBaars	Special Issue on Proceedings of Topical Workshop on III-V Nitrides Pergamon.	Conference Proceedings
65	1995	"Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100)", C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars	Journal of Electronic Materials, Nov. 1995, V24, N11:1605-1609	Journal
66	1995	"Characterization of InP Islands on InGaP/GaAs(001): Effect of Deposition Temperature", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg	Surface Science, Nov 1, 1995, V341 N1-2: 29-39	Journal
67	1996	"Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Metal-Organic Chemical Vapor Deposition", S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, X. H. Wu, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars	Applied Physics Letters, 11 Mar. 1996, V68 N11: 1525-1527	Journal
68	1996	"Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire", S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars.	Japanese J. Appl. Physics, 1 March 1996, V35, N3A: L285-8.	Journal
69	1996	"Nucleation Layer Evolution in Metal-Organic Chemical Vapor Deposition Grown GaN", X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck.	Applied Physics Letters, 4 March1996, V68 N10: 1371-1373.	Journal
70	1995	“High Performance AlAs/Ga/sub x/In/sub 1-x/As Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition,” J.C. Yen, B.P. Keller, S.P. DenBaars, U.K. Mishra.	Journal of Electronic Materials, Oct. 1995. V24, N10:1387-1390.	Journal
71	1995	“Analysis of InP Etched Surfaces Using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures,” Yu, DG; Keller, B.P.; Holmes, A.L., Jr.; Hu, E.L.; and others.	Journal of Vacuum Science & Technology B, Nov-Dec. 1995, V13, N6:2381-2385.	Journal
72	1995	“Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with tertiarybutylphosphine (TBP). Itaya, K.; Holmes, A.L., Jr.; Keller, S.; Hummel, S.G.; Coldren, L.A. and DenBaars, S.P.	Japanese Journal of Applied Physics, Part 2 (Letters), 15 Nov. 1995, V34, N11B: L1540-1542.	Journal
73	1995	“From research to manufacture-the evolution of MOCVD,” Grodzinski, P.; DenBaars, S.P.; Lee, H.C.	JOM, Dec. 1995, V47, N12: pp. 25-32.	Journal
74	1996	“Field emission from selectively regrown GaN pyramids,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	IEEE, 1996, pp.152-153.	Conference Proceedings
75	1996	“GaN HFETs and MODFETs with very high breakdown voltage and large transconductance,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; Mishra, U.K. and DenBaars, S.P.	IEEE, 1996, pp. 60-61.	Conference Proceedings
76	1996	“Ion damage propagation in dry-etched InP-based structures,” Hu, E.L.; Yu, D.G.; Chen, C.-H.; Keller, B.; and DenBaars, S.P.	IEEE, 1996, pages 107-110.	Conference Proceedings
77	1996	“InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	IEEE, 1996, pp. 157-158 Volume 2.	Conference Proceedings
78	1996	“Cleaved facets in GaN by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E.; Speck, J.S. and DenBaars, S.P.	Materials Res. Soc, 1996, pp. 165-170.	Conference Proceedings
79	1996	“Long-wavelength vertical-cavity surface-emitting laser diodes,” Babic, D.I.; Jayaraman, V.; Margalit, N.M.; Streubel, K.; and DenBaars, S.P.	Materials Research. Society, 1996, pp. 63-74.	Conference Proceedings
80	1996	“Absolute internal quantum efficiency of an InGaN/GaN quantum well,” Reese, C.; Yablonovitch, E.; Keller, S.; Keller, B.; Mishra, U.K. and DenBaars, S.P.	Opt. Soc. America, 1996, p. 472.
81	1996	“InP-based devices and their applications for merged FET-HBT technologies,” Parikh, P.; Kiziloglu, K.; Mondry, M.; Chavarkar, P.; Mishra, U. and DenBaars, S.	Microwave and Optical Technology Letters, 20 Feb. 1996, V11, N3: pp. 121-125.	Journal
82	1996	“Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP.” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Electronics Letters, 14 March 1996, V32, N6: pp. 593-594.	Journal
83	1996	“Low interface trap density for remote plasma deposited SiO/sub 2/ on n-type GaN,” Casey, H.C., Jr.; Fountain, G.G.; Alley, R.G.; Keller, B.P.; and DenBaars, S.	Applied Physics Letters, 25 March 1996, V68, N13: pp. 1850-1852.	Journal
84 (a)	1996	“Cleaved GaN facets by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E. and DenBaars, S.P.	Applied Physics Letters, 8 April 1996, V68, N15: pp. 2147-2149.	Journal
84 (b)	1996	“Growth and Characterization of bulk InGaN films and quantum wells” S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, 27 May 1996, V68, N22: pp. 3147-3149	Journal
85	1996	“InP-based multiple quantum well structures grown with tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP): effects of growth interruptions on structural and optical properties. Holmes, A.L., Jr.; Heimbuch, M.E.; Fish, G.; Coldren, L.A.; and DenBaars, S.P.	Journal of Electronic Materials, June 1996, V25, N6: pp. 965-971.	Journal
86	1996	“A new FET-based integrated circuit technology: the SASSFET,” Parikh, P.A.; Jiang, W.N.; Chavarkar, P.M.; Kiziloglu, K.; Mishra,, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, July 1996, V17, N7: pp. 375-357.	Journal
87	1996	“Photocurrent decay in n-type GaN thin films,” Qiu, C.H.; Melton, W.; Leksono, M.W.; Pankove, J.I.; Keller, B.P. and DenBaars, S.P.	Applied Physics Letters, 26 August 1996, V69, N9: pp. 1282-1284.	Journal
88	1996	“InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range,” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Electronics Letters, 29 Aug. 1996, V32, N18: pp. 1697-1699.	Journal
89	1996	“Control of III-V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness,” Gaffney, M.; Reaves, C.M.; Smith, R.S.; Holmes, A.L., Jr.; and DenBaars, S.P.	Journal of Crystal Growth, Sept. 1996, V167, N1-2: pp. 8-16.	Journal
90	1996	“Measured microwave power performance of AlGaN/GaN MODFET,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.	IEEE Electron Device Letters, Sept. 1996, V17, N9: pp. 455-457.	Journal
91	1996	“Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.	Applied Physics Letters, 2 Sept. 1996, V69, N10: pp. 1438-1440.	Journal
92	1996	“Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/,” Wu, X.H.; Brown, L.M.; Kapolnek, D.; Keller, S.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.	Journal of Applied Physics, 15 Sept. 1996, V80, N6: pp. 3228-3237.	Journal
93	1996	“Radiative recombination lifetime measurements of InGaN single quantum well,” Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M.; Bowers, J.E. & DenBaars, S.P.	Applied Physics Letters, 23 Sept. 1996, V69, N13: pp. 1936-1938.	Journal
94	1996	“Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100),” Hsueh, G.C.; Reaves, C.M.; DenBaars, S.P.; Weinberg, W.H.	Surface Science, 10 Oct. 1996, V366, N1: pp. 129-139.	Journal
95	1996	“High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts,” Shealy, J.B.; Matloubian, M.; Liu, T.Y.; Thompson, M.A.; Mishra, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, Nov. 1996, V17, N11: pp. 540-542.	Journal
96	1996	“Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy,” O'Shea, J.J.; Reaves, C.M.; DenBaars, S.P.; Chin, M.A.; and Narayanamurti, V.	Applied Physics Letters, 11 Nov. 1996, V69, N20: pp. 3022-3024.	Journal
97	1996	“45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Applied Physics Letters, 18 Nov. 1996, V69, N21: pp. 3131-3133.	Journal
98	1996	“Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition,” Wu, X.H.; Fini, P.; Keller, S.; Tarsa, E.J.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.	Japanese Journal of Applied Physics, Part 2 (Letters), 15 Dec. 1996, V35, N12B: L1648-1651	Journal
99	1996	“Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface,” Reaves, C.M.; Pelzel, R.I.; Hsueh, G.C.; Weinberg, W.H.; and DenBaars, S.P.	Applied Physics Letters, 16 Dec. 1996, V69, N25: pp. 3878-3880.	Journal
100	1996	“Real-time composition and thickness control techniques in a metalorganic chemical vapor deposition process,” Gaffney, M.S.; Reaves, C.M.; Holmes, A.L., Jr.; Smith, R.S.; and DenBaars, S.P.	Materials Res. Soc, 1996. pp. 133-138.	Conference Proceedings
101	1997	“Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition,” Keller, S.; Keller, B.; Kapolnek, D.; Mishra, U.; & DenBaars, S.	Journal of Crystal Growth, Jan. 1997, V170, N1-4: pp. 349-352.	Journal
102	1997	“Selective area epitaxy of GaN for electron field emission devices,” Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; and Mishra, U.K. and DenBaars, S.P.	Journal of Crystal Growth, Jan. 1997, V170, N.1-4: pp. 340-343.	Journal
103	1997	“Ballistic electron emission microscopy study of transport in GaN thin films,” Brazel, E.G.; Chin, M.A.; Narayanamurti, V.; Kapolnek, D.; and Mishra, U.K. and DenBaars, S.P.	Applied Physics Letters, 20 Jan. 1997, V70, N3: pages 330-332.	Journal
104	1997	“Selective-area regrowth of GaN field emission tips,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	Solid-State Electronics, Feb. 1997, V41, N2: pp. 243-245.	Journal
105	1997	“Low resistance ohmic contact to n-GaN with a separate layer method,” Wu, Y.-F.; Jiang, W.-N.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	Solid-State Electronics, Feb. 1997, V41, N2: pp. 165-168.	Journal
106	1997	“Comparing ion damage in GaAs and InP,” Yu, D.G.; Chen, C.-H.; Holmes, A.L., Jr.; Hu, E.L.; and DenBaars, S.P.	Microelectronic Engineering, Feb. 1997, V35, N1-4: pp. 95-98.	Journal
107	1997	“GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage,” Nguyen, N.X.; Keller, B.P.; Keller, S.; Wu, Y.-F.; Mishra, U.K. and DenBaars, S.P.	Electronics Letters, 13 Feb. 1997, V33, N4: pp. 334-335.	Journal
108	1997	“Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration,” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Krishnankutty, S.; Keller, S.; Abare, A.; Coldren, L.; Mishra, U. & DenBaars, S.	Journal of Applied Physics, 15 Feb. 1997, V81, N4: pp. 2021-2023.	Journal
109	1997	“Accurate mobility and carrier concentration analysis for GaN,” Look, D.C.; Sizelove, J.R.; Keller, S.; Wu, Y.F.; Mack, M.; Mishra, U.K. & DenBaars, S.P.	Solid State Communications, April 1997, V102, N4: pp. 297-300.	Journal
110	1997	“Femtosecond studies of carrier dynamics in InGaN,” Sun, C.-K.; Vallee, F.; Keller, S.; Bowers, J.E.; and DenBaars, S.P.	Applied Physics Letters, 14 April 1997, V70, N15: pp. 2004-2006.	Journal
111	1997	“Gain spectroscopy on InGaN/GaN quantum well diodes,” Kuball, M.; Jeon, E.S.; Song, Y.-K.; Nurmikko, A.V.; Keller, S.; Kozodoy, P.; Steigeruald, D,; Mishra, U.K. and DenBaars, S.P.	Applied Physics Letters, 12 May 1997, V70, N19: pp. 2580-2582.	Journal
112	1997	”Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V,” Wu, Y.-F.; Keller, S.; Kozodoy, P.; Keller, B.P.; Keller, and DenBaars, S.P.	IEEE Electron Device Letters, June 1997, V18, N6: pp. 290-292.	Conference Proceedings
113	1997	“Demonstration of InP-InGaAsP vertical grating-assisted codirectional coupler filters and receivers with tapered coupling coefficient distributions,” Yu-Heng Jan; Fish, G.A.; Coldren, L.A.; DenBaars, S.P.	IEEE Photonics Technology Letters, July 1997, V9, N7: pp. 994-996.	Journal
114	1997	“Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications,” San-Liang Lee; Heimbuch, M.E.; Cohen, D.A.; Coldren, L.A.; and DenBaars, S.P.	IEEE Journal of Selected Topics in Quantum Electronics, April 1997, V3, N2: pp. 615-27.	Journal
115	1997	“Substrate engineering of 1.55 mu m lasers,” Abraham, P.; Black, A.K.; Margalit, N.M.; Hawkins, A.R.; and DenBaars, S.P.	IEEE, 1997. pp. 455-458.	Conference Proceedings
116	1997	“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature,” Sun, C.-K.; Chiu, T.-L.; Keller, S.; Wang, G.; Minsky, M.; Bowrs, J.E.and DenBaars, S.P.	Applied Physics Letters, 28 July 1997, V71, N4: pp. 425-427.	Journal
117	1997	“Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 Ghz,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Nguyen, N.X.; Mishra, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, Sept. 1997, V18, N9: pp. 438-440.	Journal
118	1997	"MOCVD of Group III-Nitrides," S. DenBaars and S. Keller, Chapter 2, Gallium Nitride Materials and Devices, J. Pankove and T. Moustakas,	Academic Press, 1197, V50, pp. 11-37.	Journal
119	1997	"Reconfigurable Optical Properties in InGaN/GaN quantum wells,” I. Shmagi, J. Muth, R. Kolbas, M.P. Mack, A.C. Abare, S. Keller, L. A. Coldren, U.K. Mishra, and S. DenBaars.	Appl. Physics Lett. V71 N1: pp. 1455.	Journal
120	1997	"Characteristics of InGaN MQW Blue Laser Diodes Grown by MOCVD," M.P. Mack, A. C. Abare, M. Aizorcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L.A. Coldren, and S.P. DenBaars.	MRS Internet Journal of Nitride Research, 1997, Volume 2, Article 41.	Journal
121	1997	"Electron Beam Pumped MQW InGaN/GaN Laser," V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, S, DenBaars, M.D. Tiberi , T. George.	MRS Internet Journal of Nitride Research, Volume 2, Article Number 38.	Journal
122	1997	"Gallium-Nitride-Based Materials for Blue to Ultraviolet Optoelectronics Devices," S. DenBaars.	IEEE Special Issue on Optoelectronics, 1997.	Conference Proceedings
123.	1997	"MOCVD Growth and Properties of InGaN/Gan MQW," S. Keller, A. Abare, M. S. Minsky, D. H. Wu, M. P. Mack, J. S. Speck, E. Hu, L.A. Coldren, U.K. Mishra, and S. DenBaars.	Proceeding of the International Conference on SiC and Group III - Nitrides, 1997	Conference Proceedings
124.	1997	“Role of defect diffusion in the InP damage profile” D.G. Yu, C.H. Chen, A.L. Holmes Jr., S.P. DenBaars, E.L. Hu.	J. Vac. Sci. Technol. B V15, N6	Journal
125.	1997	“Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics” S.P. DenBaars	Intl. J. of High Speen Electronics and Systems, V8, N2: pp. 265-282	Journal
126.	1997	“Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy” E.J. Tarsa, B. Heying, X.H. Wu, P. Fini, S.P. DenBaars, J.S. Speck.	J. Appl. Phys. , V82, N11: pp. 5472-5479	Journal
127.	1997	“InP islands on InGaP/GaAs (001): island separation distributions” S. Varma, C.M. Reaves, V. Bressler-Hill, S.P. DenBaars, W.H. Weinberg	Science Surface, V393, N1-3: pp. 24-33	Journal
128.	1997	“Well-width dependent dtudies of InGaN-GaN single –quantum wells using time-resolved photoluminescence techniques” Chi-Kuang Sun, S. Keller, Tien-Lung Chiu, G. Wang, M.S. Minsky, J.E. Bowers, S.P. DenBaars	IEEE Journal of Selected Topics in Quantum Electronics, V3, N3: pp. 731-738	Journal
129.	1997	“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature” C.-K. Sun, T.-L. Chiu, S. Keller, G. Wang, M.S. Minsky, S.P. DenBaars, J.E. Bowers	Applied Physics Letters, V71, N4: pp. 425-427	Journal
130.	1997	“Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures” Z. Dziuba, J. antoszewski, J.M. Dell, L. Faraone, P. Kozodoy, S. Keller, B. Keller, S.P. DenBaars, U.K. Mishra	J. Appl. Phys. , V82, N6: pp. 2996-3002	Journal
131.	1997	“Short-channel Al/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz.” Y.-F. Wu, B.P. Keller, P. Fini, J. Pusl, M. Le, N.X. Nguyen, C. Nguyen, D. Widman, S. Keller, S.P. DenBaars, U.K. Mishra	Electronics Letters, V33, N20: pp. 1742-1743	Journal
132.	1997	“Compact InGaAsP/InP 1x2 optical switch based on carrier induced supression of modal interference” G.A. Fish, L.A. Coldren, S.P. DenBaars	Electronics Letters, V33, N22: pp. 1898-1900	Journal
133.	1997	“Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements” J.F. Muth, A.J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V71, N18: pp. 2572-2574	Journal
134.	1997	“In/sub x/Ga/sub 1-x/N/Al/sub y/Ga/sub 1-y/N violet light emitting dioded with reflective p-contacts for high single sided light extraction” P.M. Menz, P. Kellawon, R. Van Roijen, P. Kozodoy, S. DenBaars	Electronics Letters, V33, N24: pp. 2066-2068	Journal
135.	1998	“High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells” S. Bidnyk, T.J. Schmidt, Y.H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V72, N13: pp. 1623-1625	Journal
136.	1998	“Spiral Growth of InGaN Nanoscale Islands on GaN” S. Keller, U.K. Mishra, S.P. DenBaars, W. Seifert.	Japanese J. Appl. Phys. V37 Part 2, No. 4B: pp. 431-434	Journal
137.	1998	“Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition” P.J. Hansen, Y.E. Strausser, A.N. Erickson, E.J. Tarsa, P. Kozodoy, E.G. Brazel, J.P. Ibbetson, U. Mishra, V. Narayanamurti, S.P. DenBaars, J.S. Speck	Applied Physics Letters V72, N 18: pp. 2247-2249	Journal
138.	1998	“Growth and properties of InGaN nanoscale islands on GaN” S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U. K. Mishra, S.P. DenBaars, W. Seifert	Journal of Crystal Growth V189, N190: pp. 29-32	Journal
139.	1998	“Dislocation generation in GaN heteroepitaxy” X.H. Wu, P. Fini, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck	Journal of Crystal Growth V189, N190: pp. 231-243	Journal
140.	1998	“MOVPE growth and characterization of Mg-doped GaN” P.Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra	Journal of Crystal Growth V195: pp. 265-269	Journal
141.	1998	“Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition” H. Marchand, J.P. Ibbetson, P.T. Fini, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	Journal of Crystal Growth V195: pp. 328-332	Journal
142.	1998	“Cleaved and Etched Facet Nitride Laser Diodes” A.C. Abare, M.P. Mack, M. Hansen, R.K. Sink, P. Kozodoy, S. Keller, J.S. Speck, J.E. Bowers, U.K. Mishra, L.A. Coldren, S.P. DenBaars	IEEE Journal of Selected Topics in Quantum Electronics V4, N3: pp. 505-509	Journal
143.	1998	“Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays” R.D. Underwood, P. Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra	Applied Physics Letters V73, N3: pp. 405-407	Journal
144.	1998	“Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes” S. Chichibu, D.A. Cohen, M.P. Mack, A.C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J.E. Bowers, U.K. Mishra, L.A. Coldren, D.R. Clarke, S.P. DenBaars	Applied Physics Letters V73, N4: pp. 496-498	Journal
145.	1998	“Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells” T.J. Schmidt, Y-H Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N5: pp. 560-562	Journal
146.	1998	“Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, M.S. Minsky, E. Hu, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N8: pp. 1128-1130	Journal
147.	1998	“The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor depostion” P. Fini, X. Wu, E.J. Tarsa, Y. Golan, V. Srikant, S. Keller, S.P. DenBaars, J.S. Speck	Japanese J. Appl. Phys. V37, N8: pp. 4460-4466	Journal
148.	1998	“Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition” H. Marchand, X.H. Wu, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra	Applied Physics Letters V73, N6: pp. 747-749	Journal
149.	1998	“Electrical characterization of GaN p-n junctions with and without threading dislocations” P. Kozodoy, J.P. Ibbetson, H. Marchand, P.T. Fini, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra	Applied Physics Letters V73, N7: pp. 975-977	Journal
150.	1998	“Ridge Waveguide Sampled Grating DBR Lasers with 22-nm Quasi-Continuous Tuning Range” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren	IEEE Photonics Technology Letters V10, N9: pp. 1211-1213	Journal
151.	1998	“ ‘S-shaped’temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells” Y-H Cho, G.H. Gainer, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N10: pp. 1370-1372	Journal
152.	1998	“Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures” S.F. Chichibu, A.C. Abare, M.S. Minsky, S. Keller, S.B. Fleischer, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars	Applied Physics Letters V73, N14: pp. 2006-2008	Journal
153.	1998	“High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts” C-H Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E.L. Hu, S.P. DenBaars, U.K. Mishra, Y. Wu	Applied Physics Letters V73, N21: pp. 3147-3149	Journal
154.	1998	“Excitation energy-dependent optical characteristics of InGaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V73, N22: pp. 3181-3183	Journal
155.	1998	“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper	Applied Physics Letters V73, N26: pp.3887-3889	Journal
156.	1998	“Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile” G.A. Fish, B. Mason, S.P. DenBaars, L.A. Coldren	J. Crystal Growth, V186, N1-2: pp. 1-7	Journal
157.	1998	“Optical properies of GaAs confined in the pores of MCM-41” V. I. Srdanov, I. Alxneit, G.D. Stucky, C.M. Reaves, S.P. DenBaars	J. Physical Chemistry, V102, N18: pp. 3341-3344	Journal
158.	1998	“Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells” X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V72, N6: pp. 692-694	Journal
159.	1998	“High Al-content AlGaN/GaN MODFET’s for ultrahigh performance” Y.-F Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, L.T. Kehias, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, V19, N2: pp. 50-53	Journal
160.	1998	“Suppressed modal interference switches with integrated curved amplifiers for scaleable photonic crossconnects” G.A. Fish, L.A. Coldren, S.P. DenBaars	IEEE Photonics Technology Letters, V10, N2: pp. 230-232	Journal
161.	1998	“Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence” M.S. Minsky, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S.P. DenBaars	Applied Physics Letters, V72, N9: pp. 1066-1068	Journal
162.	1998	“Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD” H. Marchand, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	MRS Internet Journal of Nitride Semiconductor Research, V3	Journal
163.	1998	“Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering” A. Munkholm, C. Thompson, C.M. Foster, J.A. Eastman, O. Auciello, G.B.Stephanson, P. Fini, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V72, N23: pp. 2972-2974	Journal
164.	1998	“Catastrophic optical damage in GaInN multiple quantum wells” D.A. Cohen, T. Magalith, A.C. Abare, M.P. Mack, L.A. Coldren, S.P. DenBaars, D.R. Clarke	Applied Physics Letters, V72, N25: pp. 3267-3269	Journal
165.	1998	“Improvement of GaN-based laser diode facets by FIB polishing” M.P. Mack, G.D. Via, A.C. Abare, M. Hansen, P. Kozodoy, S. Keller, J.S. Speck, U.K. Mishra, L.A. Coldren, S.P. DenBaars	Electronics Letters, V34, N13: pp. 1315-1316	Journal
166.	1998	“Tunable sample-grating DBR lasers with integrated wavelength monitors” B. Mason, S.P. DenBaars, L.A. Coldren	IEEE Photonics Technology Letters, V10, N8: pp. 1085-1087	Journal
167	1998	“Compact, 4x4 InGaAsP-InP optical crossconnect with a scaleable architecture” G.A. Fish, B. Mason, L.A. Coldren, S.P. DenBaars	IEEE Photonics Technology Letters, V10, N9: pages 1256-1258	Journal
168.	1998	“Pump-probe spectoscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN” T.J. Schmidt, Y.-H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V73, N13: pp. 1892-1894	Journal
169.	1998	“Substrate reactivity and ‘controlled contamination’in metalorganic chemical vapor deposition of GaN on sapphire” Y. Golan, P. Fini, S.P. DenBaars, J.S. Speck	Japanese Journal of Applied Physics, V37, Pt.1, N9A: pp. 57-65	Journal
170.	1998	“A first look at AlGaN/GaN HBTs” L. McCarthy, P. Kozodoy, M. Rodwell, S.P. DenBaars, U.K. Mishra	Compound Semiconductor Magazine, V4, N8	Magazine
171.	1998	“Optical properties of InGaN/GaN quantum wells with Si-doped barriers” M. Minsky, S. Chichibu, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S. Keller, U.K. Mishra, S.P. DenBaars	Japanese Journal of Applied Physics, V37, Pt. 2 ,N11B: pp. 1362-1364	Journal
172.	1998	“Stimulated emission characteristics of InGaN/GaN multiple quantum wells:Excitation length and excitation density”	Applied Physics Letters, V73, N25: pp. 3689-3691	Journal
173.	1998	“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper	Applied Physics Letters, V73, N26: pp. 3887-3889	Journal
174.	1998	“Gallium nitride based materials and their application for light emitting devices” S. Keller, S.P. DenBaars	Current Opinion in Solid State & Materials Science, V3, N1: pp. 45-50	Journal
174a.	1998	Chapter 2 pp.11-35 “Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides”S. P. DenBaars, S. Keller	J. I. Pankove, T.D. Moustakas Semiconductors and Semimetals, V50: Gallium Nitride (GaN) I Academic Press: San Diego	Book Chapter
175.	1999	“Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN” G.B. Stephenson, J.A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P.H. Fuoss, P. Fini, S.P. DenBaars, J.S. Speck	MRS Bulletin/Jan.: pp. 21-25	Journal
176.	1999	“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleischer, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars	Applied Physics Letters V74, N10: pp. 1460-1462	Journal
177.	1999	“Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride” S.J. Rosner, G. Girolami, H. Marchand, P.T. Fini, J.P. Ibbetson, L. Zhao, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck	Applied Physics Letters V74, N14: pp. 2035-2037	Journal
178.	1999	“Dislocation mediated surface morphology of GaN” B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, J.S. Speck	Journal of Applied Physics V85, N9: pp. 6470-6476	Journal
179.	1999	“Widely Tunable Sampled Grating DBR Laser with Integrated Electroabsorption Modulator” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren	IEEE Photonics Technology Letters V11, N6: pp. 638-640	Journal
180.	1999	“Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells’ S.Fleisher, S. Keller, A. Abare, L. Coldren, U. Mishra, S. DenBaars, J. Bowers	Ultrafast Electonics and Optoelectronics: Snow Mass, CO April 12-16	Conference Proceedings
181.	1999	“Near-field scanning optical microscopy of indium gallium nitride multple-quantum-well laser diodes” D. Young, M. Mack, A. Abare, M. Hansen, L. Coldren, S. DenBaars, E. Hu , D. Awschalom	Applied Physics Letters; V74, N16	Journal
182.	1999	“Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings” A. Abare, M. hanson, J. Speck, L. coldren, s. DenBaars	Device Research Conferecne, paper no. VII.B-6; Santa Barbara, CA	Conferece Proceedings
183.	1999	“Indium tin oxide contacts to gallium nitride optoelectronic devices” T. Margalith, O. Buchinsky, D. Cohen, A. Abare, M. Hansen, S. DenBaars, L. Coldren	Applied Phyics Letters; V7, N26	Journal
184.	1999	“Improved characterstics of InGaN multi-quantum well laser diodes grown on laterally overgrown GaN on sapphire” M, Hanson, P. Fini, L. Zhao, A. Abare, J. Speck, L. coldren, S. DenBaars	Elecronic Materials Conf.; Santa Barbara, CA – post deadline paper Session R, Electronic Materials Conf., June 30 – July 2, 1999	Conference Proceeding
185.	1999	High-performance (Al,Ga)N-based solar-blind ultraviolet p-I-n detectors on laterally epitaxially overgrown GaN, G. Parish, S. Keller, P. Kozodoy, J.P. Ibbitson, H. Marchand, P.T. Fini, S.B. Fleischer, E.J. Tarsa , S.P. DenBaars, and U.K. Mishra.	Applied Phyics Letters; V75, N2: pp. 247-249.	Journal
186.	1999	High-quality coalescense of laterally overgrown GaN stripes on GaN/sapphire seed layers, P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U. K. Mishra and J.S. Speck.	Applied Phyics Letters; V75, N12: pp. 1706-1708.	Journal
187.	1999	Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings” A.C. Abare, M. Hansen, J. S. Speck, S. P. DenBaars and L. A. Coldren.	Electronics Letters, Sept. 2, 1999, V35, N18: pp. 205-206.	Journal
188.	1999	“Effect of AlGaN/GaN strained layer superlattice period of InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars	Phys. Stat. Sol., V176: pp. 59-62	Journal
189.	1999	“Optical Spectroscopy of InGaN/GaN quantum wells” E. Berkowiz, D. Gershoni, G. Bahir, a. Abare, S DenBaars, L. Coldren	Phys. Stat. Sol. 216,291	Journal
190.	1999	“Embedded delelctric grating distributed feedback nitride laser diode” A. Abare, M. Hansen, J. speck, L. coldren, S. DenBaars	International conference on nitride Semiconductros, Paper no. WePO61: Montpeliier, France	Conference Proceeding
191.	1999	“Photoresponse and physical properties of photoconductor and photovoltaic GaN based UV detectors” V. Garber, G. Bahit, J. Salzman, A. Abare, S. DenBaars, L. coldren	International conference on Niride Semiconductoes: montpellier, France- paper no. WePO35	Conference Proceeding
192.	1999	“Monolithic integration of a widely tunable laser and an electro-absorptoin modulator” B. Mason, G. Fish, S. DenBaars, L. Coldren	Integrated Photonic Research 99’; Santa Barbara, CA-paper no. RME2	Conference Proceeding
193.	1999	“Compact, 1.55 µm spot-size converters for InP based photonic integrated circuits” G. Fish, B. mason, L. coldren, s. DenBaars	Integrated Photonics Research Conference ’99; santa Barbara, CA-paper no. RWD4	Conference Proceedings
194.	1999	“Monolithic InP Optical Crossconnects: 4x4 and beyond” G. Fish, B. Mason, L. coldren, S. DenBaars	Photonics in Switching; Santa Barbara, CA-paper no. JWB2	Conference Proceedings
195.	1999	“Transparent contact to p-GaN: indium tin oxide/titanium nitride” O. Buchinsky, T. Margalith, D. Cohen, A. Abare, S. DenBaars, L. coldren	LEOs Summer Topicals; San Diego, CA-paper no. FBI 3	Conference Proceedings
196.	1999	“Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells” C. Sun, J. lLiang, C. Stanton, A. Abare, L. coldren, S. DenBaars	Applied Physics Letters; V75:N9	Journal
197.	1999	“Optical Crossbar Switches on InP” G. Fish, B. Mason, L. coldren, S. DenBaars	LEOS ’99; San Francisco, CA- paper no. WC1	Conference Proceeding
198.	1999	“Improved Characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao, A. Abare, L. Coldren, J. Speck, S. DenBaars	Materials Research Society Meeting; Boston, MA-paper no. W1 3	Journal
199.	1999	“Optical properties of InGaN quantum wells” S.F. Chichibu, A.C. Abare, M.P. Mack,M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Soto, S. Nakamura	Materials Science and Engineering B59, pp. 298-306	Journal
200.	1999	“High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: influence of Si-Doping concentration” Y.-H. Cho, F. Fedler, R.J. Hauenstein, G.H. Park, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Journal of Applied Physics, V85, N5: pp. 3006-3008	Journal
201.	1999	“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleisher, J.S. Speck, S.P. DenBaars, T. Deguchi, T. Soto, S. Nakamura	Applied Physics Letters, V74, N10: pp. 1460-1462	Journal
202.	1999	“Low-temperature scanning tunneling microscope-induced luminescsence of an InGaN/GaN multiquantum well” S. Evoy, C.K. Harnett, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V74, N10: pp. 1457-1459	Journal
203.	1999	“Structural and optical properties of GaN laterally overgrown on Si(111) by metal organic vapor deposition using an AlNbuffer layer” H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, P.T. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	MRS Internet Journal, V4S1	Journal
204.	1999	“Study of temperature effects on loss mechanisms in 1.55m laser diodes with In/sub 0.81/Ga/sub 0.19/P electron stopper layer” P. Abraham, J. Piprek, S.P. DenBaars, J.E. Bowers	Semiconductor Science and Technology, V14, N5: pp. 419-424	Journal
205.	1999	“Observation of growth modes during metal-organic chemical vapor deposition of GaN” G.B. Stephenson, J.A. Eastman, C. Thompson, O. Auciello, L.J. Thompson, A, Munkholm, P. Fini, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V74, N22: pp. 3326-3328	Journal
206.	1999	“Ultrafast electron dynamics study of GaN” C.-K. Sun, Y.-L. Huang, S. Keller, U.K. Mishra, S.P. DenBaars	Physical Review B, V59, N21: pp. 13535-13538	Journal
207.	1999	“High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S, Speck	Applied Physics Letters, V74 N23: pp. 3528-3530	Journal
208.	1999	“Enhanced Mg doping efficiency in Al/sub 0.2/Ga/sub 0.8/N/GaN superlattices” P. Kozodoy, M. Hansen, S.P. DenBaars, U.K. Mishra	Applied Physics Letters, V74, N24: pp. 3681-3683	Journal
209.	1999	“AlGaN/GaN heterojunction bipolar transistor” L.S. McCarthy, P. Kozodoy, M.J. Rodwell, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, V20, N6: pp. 277-279	Journal
210.	1999	“AlGaN/GaN HBTs using regrown emitter” J.B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson, Y. Smorchkova, S.P. DenBaars, U.K. Mishra	Electronics Letters, V35, N19: pp. 1671-1673	Journal
211.	1999	“Surface structure of GaN(0001) in the chemical vapor deposition environment” A. Munkholm, G.B. Stephenson, J.A. Eastman, C. Thompson, P. Fini, J.S. Speck, O. Auciello., P.H. Fuoss, S.P. DenBaars	Physical Review Letters, V83, N4: pp. 741-744	Journal
212.	1999	“Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies” H. Jiang, M. Minsky, S. Keller, E. Hu, J. Singh, S.P. DenBaars	IEEE Journal of Quantum Electronics, V35, N10: pp. 1483-1490	Journal
213.	1999	“Coupling of InGaN quantum-well photoluminescence to silver surface plasmons” I. Gontijo, M. Boroditsky, E. Yablonovich, S. Keller, U.K. Mishra, S.P. DenBaars	Physical Review B, V60, N16: pp. 11564-11567	Journal
214.	1999	“Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, C.R. Elsass, J.P. Ibbetson, R. Ventury, B. Heying, P. Fini, E. Haus, S.P. DenBaars, J.S. Speck, U.K. Mishra	Journal of Applied Physics, V86, N8: pp. 4520-4526	Journal
215.	1999	“Polarization-enhanced Mg doping of AlGaN/GaN superlattices” P. Kozodoy, Y.P. Smorchkova, M. Hansen., H. Xing, S.P. DenBaars, U.K. Mishra, A.W. Saxler, R. Perrin, W.C. Mitchel	Applied Physics Letters, V75, N16: pp. 2444-2446	Journal
216.	1999	“Structural and optical characteristics of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells with different In compositions” Y.-H. Kwon, G.H. Gainer, S. Bidnyk, Y.H. Cho, J.J. Song, M. Hansen, S.P. DenBaars	Applied Physics Letters, V75, N17: pp. 2545-2547	Journal
217.	1999	“GaN-based FETs for Microwave Power Amplification” Y.F. Wu, B.P. Keller, S. Keller, J.J. Xu, B.J. Thibeault, S.P. DenBaars, U.K. Mishra	IEICE Trans. Electron., VE82-C N11: pp. 1895-1905	Journal
218.	1999	“Femtosecond Z-scan measurement of GaN” Y.-L. Huang, C.-K. Sun, J.-C Liang, S. Keller, M.P. Mack, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V75, N22: pp. 3524-3526	Journal
219.	1999	“Large interband second-order susceptibilities in In/sub x/Ga/sub 1-x/N/GaN quantum wells” H.Schmidt, A.C, Abare, J.E.Bowers, S.P. DenBaars, A. Imamoglu,	Applied Physics Letters, V75, N23: pp. 3611-3613	Journal
220.	1999	“Thermal conductivity of lateral epitaxial overgrown GaN films” C.-Y Luo, H. Marchand, D.R. Clarke, S.P. DenBaars	Applied Physics Letters, V75, N26: pp. 4151-4153	Journal
221.	1999	“Thermal annealing of InGaN/GaN strained-layer quantum wells” M.C.-Y. Chan, K.-O. Tsang, E.H. Li, S.P. DenBaars	MRS Internet Journal, V4S1, G6.25	Journal
222.	1999	“Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process” H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	MRS Internet Journal, V4S1, G4.5	Journal
223.	1999	“Spectroscopic studies in InGaN quantum wells” S.F. Chichibu, T. Sota, K. Wada., S.P. DenBaars, S. Nakamura	MRS Internet Journal, V4S1, G2.7	Journal
224.	1999	“Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells” Y.-H. Cho, B.D. Little, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	MRS Internet Journal, V4S1, G2.4	Journal
225.	1999	“Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells” Y.-H. Cho, T.J. Schmidt, S. Bidnyk, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	MRS Internet Journal,V4S1, G6.44	Journal
226.	1999	“Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells” T.J. Schmidt, S. Bidnyk, Y.-H. Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	MRS Internet Journal, V4S1, G6.54	Journal
227.	1999	“Scanning tunneling microscope-induced luminescence of GaN at threading dislocations” S. Evoy, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars	Journal of Vacuum Science & Technology B, V17, N1: pp. 29-32	Journal
228.	2000	“Sims investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlXGa 1-X N,” G. Parish, S. Keller, S.P. DenBaars and U.K. Mishra	Journal of Electronic Materials, V29, N1, pp. 15-20.	Journal
229.	2000	“Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray defraction” P. Fini, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J.S. Speck	Journal of Crystal Growth, V209: pp. 581-590	Journal
230.	2000	“Characterization of an AlGaN/GaN two-dimensional electron gas structure” A. Saxler, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck	Journal of Applied Physics, V87, N1: pp. 369-374	Journal
231.	2000	“Depletion region effects in Mg-doped GaN” P. Kozodoy, S.P. DenBaars, U.K. Mishra	Journal of Applied Physics, V87, N2: pp. 770-775	Journal
232.	2000	“Improved characteristics of InGaN multiple –quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao. A.C. Abare, L.A. Coldren, J.S. Speck, S.P. DenBaars	Applied Physics Letters, V76, N5: pp. 529-531	Journal
233.	2000	“Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra	Applied Physics Letters, V76, N6: pp. 718-720	Journal
234.	2000	“Heavy doping effects in Mg-doped GaN” P. Kozodoy, H. Xing, S.P. DenBaars, U.K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W.C. Mitchel	Journal of Applied Physics, V87, N4: pp. 1832-1835	Journal
235.	2000	“Epitaxially-grown GaN junction field effect transistors” L. Zhang, L.F. Lester, A.G. Baca, R.J. Shul, P.C. Chang, C.G. Willison, U.K. Mishra, S.P. DenBaars, J.C. Zolper	IEEE Transactions on Electron Devices, V47, N3: pp. 507-511	Journal
236.	2000	“Linear and nonlinear optical properties of In/sub x/Ga/sub 1-x/N/GaN heterostructures” Y.H. Cho, T.J. Schmidt, S. Bidnyk, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars	Physical Review B, V61, N11: pp. 7571-7588	Journal
237.	2000	“Distributed feedback laser diodes employing embedded dielectric gratings located above the active region” A.C. Abare, S.P. DenBaars, L.A. Coldren	IEICE Trans. Electron, VE83-C, N4: pp. 560-563	Journal
238.	2000	“Transient processes in AlGaN/GaN heterostructures field effect transistors” S.L. Rumyantsev, M.S. Shur, R. Gaska, X. Hu, A. Khan, G. Simin, J. Yang, N. Zhang, S.P. DenBaars, U.K. Mishra	Electronics Letters, V36, N8: pp. 757-759	Journal
239.	2000	“Measured and calculated radiative lifetime and optical absorption of In/sub x/Ga/sub 1-x/ N/GaN quantum structures” E. Berkowitz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A.C, Abare, S.P. DenBaars, L.A. Coldren	Physical Review B, V61, N16: pp. 10994-11008	Journal
240.	2000	“High voltage operation (>80V) of GaN bipolar junction transistors with low leakage” J.B. Limb, H. Xing, B. Moran, L. McCarthy, S.P. DenBaars, U.K. Mishra	Applied Physics Letters, V76, N17: pp. 2457-2459	Journal
241.	2000	“Charge control and mobility in AlGaN/GaN transistors: experimental and theoretical studies” Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J. Singh	Journal of Applied Physics, V87, N11: pp. 7981-7987	Journal
242.	2000	“Channeling as a mechanism for dry etch damage in GaN” E.D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S.P. DenBaars, L.A. Coldren, U.K. Mishra, E.L. Hu	Applied Physics Letters, V76, N26: pp. 3941-3943	Journal
243.	2000	“In Situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN” P. Fini, A. Munkholm, C. Thompson, G.B. Stephenson, J.A. Eastman, M.V. R. Murty, O. Auciello, L. Zhao, S.P. DenBaars, J.S. Speck	Applied Physics Letters, V76, N26: pp. 3893-3895	Journal
244.	2000	“Ultrafast optical characterization of carrier capture times in In/sub x/Ga/sub 1-x/ N multiple quantum wells” U. Ozgur, M.J. Bergmann, H.C. Casey, Jr., H.O. Everitt, A.C. Abare, S. Keller, S.P. DenBaars	Applied Physics Letters, V77, N1: pp. 109-111	Journal
245.	2000	“Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars	Mat. Res. Soc. Symp., V595, W1.4.1-W1.4.6	Journal
246.	2000	“Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes” A. Hierro, D. Kwan, S.A. Ringel, M. Hansen, J.S. Speck, U.K. Mishra, S.P. DenBaars	Applied Physics Letters, V76, N21: pp. 3064-3066	Journal
247.	2000	“Transition between the 1x1 and (√3x2√3)R30 surface structures of GaN in the vapor-phase environment” A. Munkholm, C. Thompson, G. B. Stephenson, J.A. Eastman, O. Auciello, P. Fini, J.S. Speck, S.P. DenBaars	Physica B, V283: pp. 217-222	Journal
247a.	2000	Chapter 1 pp. 1-25 “Basic Physics & Materials Technology of GaN LEDs and LDs”Steven P. DenBaars	S. Nakamura, S.F. Chicibu Introduction to Nitride SemiconductorBlue Lasers and Light Emitting Diodes. Taylor & Francis: London	Book Chapter
248.	2000	“Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors” J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBaars, J.S. Speck, U.K. Mishra	Applied Physics Letters, V77, N2: pp. 250-252	Journal
249.	2000	“In situ studies of the effect of silicon on GaN growth modes” A. Munkholm, G. B. Stephenson, J. A. Eastman, O. Auciello, M. V. Ramana Murty, C. Thompson, P. Fini, J. S. Speck, S. P. DenBaars	Journal of Crystal Growth, V.221, pp. 98-105	Journal
250.	2000	“Layer by layer growth of GaN induced by silicon” A. Munkholm, C. Thompson, M. V. Ramana Murty, J. A. Eastman, O. Auciello, G. B. Stephenson, P. Fini, S. P. DenBaars, J. S. Speck	Applied Physics Letters, V77 N11, pp. 1626-1628	Journal
251.	2000	“Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy” B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, J. S. Speck	Applied Physics Letters, V77 N18, pp. 2885-2887	Journal
252.	2000	“Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, James S. Speck, A. Saxler, S. Elhamri, W. C. Mitchel	Japanese Journal of Applied Physics, V39 N10B (part 2), pp. L1023-L1025	Journal
253.	2000	“Dislocation reduction in GaN films through selective island growth of InGaN” S. Keller, G. Parish, J. S. Speck, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V77 N17, pp. 2665-2667	Journal
254.	2000	“Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates” B. Moran, M. Hansen, M. D. Craven, J. S. Speck, S. P. DenBaars	Journal of Crystal Growth, V221, pp. 301-304	Journal
255.	2000	“Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure” S. Elhamri, A. Saxler, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck	Journal of Applied Physics, V88, N11, pp. 6583-6588	Journal
256.	2001	“Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes” S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura	Physica Status Solidi A, V183, pp. 91-98	Journal
257.	2001	“Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells” G. Vaschenko, D. Patel, C. S. Menoni, S. Keller, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, V78, N5, pp. 640-642	Journal
258.	2001	“Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells” Y.-C. Huang, J.-C. Liang, C.-K. Sun, A. Abare, S. P. DenBaars	Applied Physics Letters, V78, N7, pp. 928-930	Journal
259.	2001	“Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells” C.-K. Sun, Y.-K. Huang, J.-C. Liang, A. Abare, S. P. DenBaars	Applied Physics Letters, V78, N9, pp. 1201-1203	Journal
260.	2001	“Spin coherence and dephasing in GaN” B. Beschoten, E. Johnston-Halperin, D. K. Young, M. Poggio, J. E. Grimaldi, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu, D. D. Awschalom	Physical Review B, V63, pp. 121201-1-121201-4	Journal
261.	2001	“Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications” A. R. Stonas, T. Margalith, S. P. DenBaars, L. A. Coldren, E. L. Hu	Applied Physics Letters, V78, N13, pp. 1945-1947	Journal
262.	2001	“GaN HBT: Toward an RF Device” L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars, U. K. Mishra	IEEE Transactions on Electron Devices, V48, N3, pp. 543-551	Journal
263.	2001	“Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB” S. Keller, Y.-F. Wu, G. Parish, B. Ziang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra	IEEE Transactions on Electron Devices, V48, N3, pp. 552-559	Journal
264.	2001	“Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors” L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, U. K. Mishra	Applied Physics Letters, V78, N15, pp. 2235-2237	Journal
265.	2001	“Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors”	Journal of Applied Physics, V89 N12, pp. 7846-7851	Journal
266.	2001	“Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN” E. D. Haberer, C. H. Chen, M. Hansen, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu	J. Vac. Sci. Technol. B, V19 N3, pp. 603-608	Journal
267.	2001	“Channeling as a mechanism for dry etch damage in GaN” E. D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S. DenBaars, L. Coldren, U. Mishra, E. L. Hu	Appl. Phys. Lett., V76 N26, pp. 3941-3943	Journal
268.	2001	“Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy” C. K. Sun, S. W. Chu, S. P. Tai, S. Keller, A. Abare, U. K. Mishra, S. P. DenBaars	Scanning, May-June 2001, V.23 N3, pp. 182-192	Magazine
269.	2001	“Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure” Z. Dziuba, M. Gorska, J. Antoszewski, A. Babinski, P. Kozodoy, S. Keller, B. Keller, S. P. DenBaars, U. K. Mishra	Applied Physics A- Materials Science & Processing , V72 N6, pp. 691-698	Journal
270.	2001	“Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an InxGa 1-xN/GaN double heterostructures” C. K. Choi, B. D. Little, Y. H. Kwon, J. B. Lam, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars	Physical Review B, V6319 N19, pp. U262-U267	Journal
271.	2001	“Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells” M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars	Semiconductor Science and Technology, V16 N5, pp. 406-412	Journal
272.	2001	“Effect of growth termination conditions of the performance of AlGaN/GaN high electron mobility transistors” S. Keller, R. Ventury, G. Parish, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V78 N20, pp. 3088-3090	Journal
273.	2001	“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN” S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V78 N19, pp. 2876-2878	Journal
274.	2001	“Selective area mass transport reqrowth of gallium nitride” S. Heikman, S. P. DenBaars, U. K. Mishra	Japanese Journal of Applied Physics, part 1, V40 N2A, pp. 565-566	Journal
275.	2001	“Investigations of chemical vapor deposition of GaN using synchotron radiation” C. Thompson, G. B. Stephenson, J. A. Eastman, A. Munkholm, O. Auciello, M. V. R. Murty, P. Fini, S. P. DenBaars, J. S. Speck	Journal of the Electrochemical Society, V148 N5, pp. C390-C394	Journal
276.	2001	“Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states” C. K. Sun, J. C. Liang, X. Y. Yu, S. Keller, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, V78 N18, pp. 2724-2726	Journal
277.	2001	“Gallium nitride based transistors” H. Xing, S. Keller, Y. F. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra	Journal of Physics-Condensed Matter, V13 N32, pp. 7139-7157	Journal
278.	2001	“Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures” P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Lepkowski, N. E. Christensen, A. Svane, M. Hansen, S. P. DenBaars, B. Damilano, N. Gandjean, J. Massies	Physical Review B, V64 N11, pp. U459-U466	Journal
279.	2001	“AlGaN/AlN/GaN high-power microwave HEMT” L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Ke.ller, S. P. DenBaars, U. K. Mishra	IEEE Electron Device Letters, V22 N10, pp. 457-459	Journal
280.	2001	“Infrared and Raman-scattering studies in a single-crystalline GaN nanowires” H. L. Liu, C. C. Chen, C. T. Chia, C. C. Yeh, C. H. Chen, M. Y. Yu, S. Keller, S. P. DenBaars	Chemical Physical Letters, Vol. 345 No. 3-4, pp. 245-251	Journal
281.	2001	“Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck	Journal of Crystal Growth, V233 N4, pp. 709-716	Journal
282.	2001	“Influence of growth temperatures and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, W. C. Mitchel	Japanese Journal of Applied Physics, V40 N11, pp.6235-6238	Journal
283.	2001	“Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates” T. M. Katona, M. D. Craven, P. T. Fini, J. S. Speck, S. P. DenBaars	Journal of Applied Physics, V79 N18, pp. 2907-2909	Journal
284.	2001	“Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy” S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura	Applied Physics Letters, V79 N22, pp. 3600-3602	Journal
285.	2001	“Capture kinetics of electron traps in MBE-grown n-GaN”A. Hierro, A. R. Arehart, B. Heying, M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel	Physical Status Solidi B, V228, N1, pp. 309-313	Journal
286.	2001	“Indium –surfectant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition” S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V79 N21, pp. 3361-3363	Journal
287.	2001	“Generation of coherent acoustic phonons in strained GaN thin films” Y. K. Huang, G. W. Chern, C. K. Sun, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars	Applied Physics Letters, V79 N20, 3361-3363	Journal
288.	2001	"AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy" I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra	Journal of Applied Physics, Vol. 90 No. 10, pp. 5196-5201 Correction/Addition Vol. 91 No. 7, p. 4780	Journal
289.	2001	“Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN” A. Hierro, M. Hansen, J. J. Boeckl, L. Zhao, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel	Physica Status Solidi B, Vol. 228 No. 3, pp. 937-946	Journal
290.	2001	“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN” S. Heikman, S. Keller, B. Moran, R. Coffie, S. P. DenBaars, U. K. Mishra	Physica Status Solidi A, Vol. 188 No. 1, pp. 355-358	Journal
291.	2001	“Solar-blind p-GaN/i-AlGaN/n-AlGaN ultraviolet photodiodes on SiC substrate” G. Parish, M. Hansen, B. Moran, S. Keller, S. P. DenBaars, U. K. Mishra	Physica Status Solidi A, Vol. 188 No. 1, pp. 297-300	Journal
292.	2001	“Kilovolt AlGaN/GaN HEMTs as switching devices” N. Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, T. P. Ma	Physica Status Solidi A, Vol. 188 No. 1, pp. 213-217	Journal
293.	2001	“Indium surfectant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition” S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra	Physica Status Solidi A, Vol. 188 No. 2, pp. 775-778	Journal
294.	2001	“Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes” M. Hansen, L. F. Chen, J. S. Speck, S. P. DenBaars	Physica Status Solidi B, Vol. 228 No. 2, pp. 353-356	Journal
295.	2001	“Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers” C. K. Choi, Y. H. Kwon, B. D. Little, G. H. Gainer, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars	Physical Review B, Vol. 6424 No. 24, pp. 5339:U608-U613	Journal
296.	2001	“Photoelectrochemical undercut etching for fabrication of GaN microelectrochemical systems” A. R. Stonas, N. C. MacDonald, K. L. Turner, S. P. DenBaars, E. L. Hu	Journal of Vacuum Science & Technology B, Vol. 19 No. 6, pp. 2838-2841	Journal
297.	2002	“Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition” E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Frietas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra	Physical Review B, Vol. 6508 No. 8, pp. U344-U353	Journal
298.	2002	“Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors” L. S. McCarthy, I. P. Smorchkova, P. Fini, M. J. W Rodwell, J. Speck, S. P. DenBaars, U. K. Mishra	Electronics Letters, Vol. 38 No. 3, pp. 144-145	Journal
299.	2002	“Systematic characterization of Cl-2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs” D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, U. K. Mishra	IEEE Electron Device Letters, Vol. 23 No. 2, pp. 76-78	Journal
300.	2002	“Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular beam epitaxy” A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. A. Ringel	Applied Physics Letters, Vol. 80 No. 5, pp. 805-807	Journal
301.	2002	“Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN” M. Hansen, P. Fini, M. Craven, B. Heying, J. S. Speck , S. P. DenBaars	Journal of Crystal Growth, Vol. 234, pp. 623-630	Journal
302.	2002	“Mg-rich precipitates in the p-type doping of InGaN-based laser diodes” M. Hansen, L. F. Chen, S. H. Lim, S. P. DenBaars, J. S. Speck	Applied Physics Letters, Vol. 80 No. 14, pp. 2469-2471	Journal
303.	2002	“GaN-GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design” S. Keller, S. Heikman, L. Shen, I. P. Smorchkova, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, Vol. 80 No. 23, pp. 4387-4389	Journal
304.	2002	“Chemical mechanical polishing of gallium nitride” P. R. Tavernier, T. Margalith, L. A. Coldren, S. P. DenBaars, D. R. Clarke	Electrochemical and Solid-State Letters, Vol. 5 No. 8, pp. 61-64	Journal
305.	2002	“Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Meyers, R. J. Molnar	Materials Science & Engineering B, Vol. 93, pp. 39-48	Journal
306.	2002	“Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy” P. Waltereit, M. D. Craven, S. P. DenBaars, J. S. Speck	Journal of Applied Physics, Vol. 92 No. 1, pp. 456-460	Journal
307.	2002	“Femtosecond dynamics of exciton bleaching in bulk GaN at room tempurature” Y. C. Huang, G. W. Chern, K. H. Lin, J. C. Liang, C. K. Sun, C. C. Hsu, S. Keller, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 1, pp. 85-87	Journal
308.	2002	“Structural characterization of nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 3, pp. 469-471	Journal
309.	2002	“Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition”S. Heikman, S. Keller, S. P. Denbaars, U. K. Mishra	Applied Physics Letters, Vol. 81 No. 3, pp. 439-441	Journal
310.	2002	“Threading dislocation reduction via laterally overgrown nonpolar (11 (2) over-bar0) a-plane GaN” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 81, No. 7, pp. 1201-1203	Journal
311.	2002	“Tunable sampled-grating DBR lasers using quantum-well intermixing” E. J. Skogen, J. S. Barton, S. P. Denbaars, L. A. Coldren	IEEE Photonics Technology Letters, Vol. 14 No. 9, pp. 1243-1245	Journal
312.	2002	“Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy” C. Poblenz, T. Mates, M. Craven, S. P. DenBaars, J. S. Speck	Applied Physics Letters, Vol. 81 No. 15, pp. 2767-2769	Journal
313.	2002	“A quantum-well-intermixing process for wavelength-agile photonic integrated circuits” E. J. Skogen, J. S. Barton, S. P. DenBaars, L. A. Coldren	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8 No. 4, pp. 863-869	Journal
314.	2002	“Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy” T. M. Katona, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 19, pp. 3558-3560	Journal
315.	2002	“Ultrashort hole capture time in Mg-doped GaN thin films” K.-H. Lin, G.-W. Chern, S.-W. Chu, C.-K. Sun, H. Xing, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 21, pp. 3975-3977	Journal
316.	2002	“Higher efficiency InGaN laser diodes with an approved quantum well capping configuration” M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars	Applied Physics Letters, Vol. 81 No. 22, pp. 4275-4277	Journal
317.	2002	“Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys” D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, I. Smorchkova	Applied Physics Letters, Vol. 81 No. 23, pp. 4395-4397	Journal
317. (a)	2002	“Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)” T. M. Katona, J. S. Speck, S. P. DenBaars	Physica Status Solidi A, Vol. 194, pp. 550-553	Journal
317. (b)	2002	“Nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars	Physica Status Solidi A, Vol. 194, pp. 541-544	Journal
318.	2003	“AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching” Y. Gao, A. R. Stonas, I. Ben-Yaacov, U. Mishra, S. P. DenBaars, E. L. Hu	Electronics Letters, Vol. 39 No. 1, pp. 148-149	Journal
319.	2003	“Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor” S. Estrada, H. Xing, A. Stonas, A. Huntington, U. Mishra, S. DenBaars, L. Coldren, E. Hu	Applied Physics Letters, Vol. 82, No. 5, pp. 820-822	Journal
320.	2003	“Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In_xGa_1-xN/GaN multiple quantum wells” S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura	Journal of Applied Physics, Vol. 93, No. 4, pp. 2051-2054	Journal
321.	2003	“Memory effect and redistribution of Mg into sequencially regrown GaN layer by metalorganic chemical vapor deposition” H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, S. P. DenBaars, U. K. Mishra	Japanese Journal of Applied Physics, Vol. 42, No. 1, pp. 50-53	Journal
322.	2003	“High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology” V. Paidi, X. Shouxuan, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. P. DenBaars, U. K. Mishra, S. Long, M. J. W. Rodwell	IEEE Transactions on Microwave Theory & Techniques, Vol. 51, No. 2, pp. 643-652	Journal
323.	2003	“1.3 mu m wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: a prospect for polarization control” Y. L. Okuno, J. Geske, K.-G. Gan, Y. J. Chiu, S. P. DenBaars, J. E. Bowers	Applied Physics Letters, Vol. 82, No. 15, pp. 2377-2379	Journal
324.	2003	“Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells” U. Ozgur, H. O. Everitt, S. Keller, S. P. DenBaars	Applied Physics Letters, Vol. 82, No. 9, pp. 1416-1418	Journal
325.	2003	“Metalorganic chemical vapor deposition of highly conductive Al_0.65Ga_0.35N films” P. Cantu, S. Keller, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, Vol. 82, No. 21, pp. 3683-3685	Journal
326.	2003	“Metalorganic chemical vapor deposition of group III nitrides – a discussion of critical issues” S. Keller, S.P. DenBaars	Journal of Crystal Growth, Vol. 248, pp. 479-486	Journal
327.	2003	“Growth and characteristics of Fe-doped GaN” S. Heikman, S. Keller, T.Mates, S. P. DenBaars, U. K. Mishra	Journal of Crystal Growth, Vol. 248, pp. 513-517	Journal
328.	2003	“Very high voltage operation (>330V) with high current gain of A1GaN/GaN HBTs” H.L. Xing, P.M. Chavarkar, S. Keller, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, Vol. 24, No. 3, pp. 141-143	Journal
329.	2003	“Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures” S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, U. K. Mishra	Journal of Applied Physics, Vol. 93, No. 12, pp. 10114-10118	Journal
330.	2003	“Si doping effect on strain reduction in compressively strained A10.49Ga0.51N thin films” P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck	Applied Physics Letters, Vol.83, No. 4, pp. 674-676	Journal
331.	2003	“Non-planar selective area growth and characterization of GaN and A1GaN” S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra, F. Bertram, J. Christen	Japanese Journal of Applied Physics Part 1 – Regular Papers, Short Notes & Review Papers, Vol. 42, No.10, pp. 6276-6283	Journal
332.	2003	“Variation of structural and optical properties across an A1GaN/GaN HEMT structure directly imaged by cathodoluminescence micrscopy” F. Bertram, J. Christen, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra	Physica Status Solidi A-Applied Research, Vol. 200, No.1, pp. 183-186	Journal
333.	2003	“A widely tunable high-speed transmitter using an integrated SGDBR laser-semiconductor optical amplifier and Mach-Zehnder modulator” J.S. Barton, E.J. Skogen, M.L. Masanovic, S.P. DenBaars, L.A. Coldren	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1113-1117	Journal
334.	2003	“Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators” E.J. Skogen, J.W. Raring, S.P. DenBaars, L.A. Coldren	IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1183-1190	Journal
335.	2003	“n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-infused at 550-750 degrees C” S. Estrada, A. Huntington, A. Stonas, H. Xing, U. Mishra, S. DenBaars, L. Coldren, E. Hu	Applied Physics Letters, Vol. 93, No. 12, pp. 560-562	Journal
336.	2003	“High-linearity class B power amplifiers in GaN HEMT technology” X. Shouxuan, V. Paidi, R. Coffie, S. Keller, S. Heikman, B. Moran, A. Chini, S. P. DenBaars, U. Mishra, S. Long, M. J. W. Rodwell	IEEE Microwave & Wireless Components Letters, Vol. 13, No. 7, pp. 284-286	Journal
337.	2003	“Recombination dynamics of localized excitons in cubic In_xGa_1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate” S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura	Journal of Vacuum Science & Technology B, Vol. 21, No. 4, pp. 1856-1862	Journal
338.	2003	“Structural and morphological characteristics of planar(1120) a-plane gallium nitride grown by hydride vapor phase epitaxy” B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura	Applied Physics Letters, Vol. 83, No. 8, pp. 1554-1556	Journal
339.	2003	“Refractive index study of Al_xGa_1-xN films grown on sapphire substrates” N. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars	Journal of Applied Physics, Vol. 94, No. 5, pp. 2980-2991	Journal
340.	2003	“Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope” N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati	Journal of Applied Physics, Vol. 94, No. 7, pp. 4315-4319	Journal
341.	2003	“Observation of huge nonlinear absorption enhancement near exciton resonance in GaN” K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, C.-K. Sun	Applied Physics Letters, Vol. 83, No. 15, pp. 3087-3089	Journal
342.	2003	“High conductivity modulation doped AlGaN/GaN multiple channel heterostructures” S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, U. K. Mishra	Journal of Applied Physics, Vol. 94, No. 8, pp. 5321-5323	Journal
343.	2003	“Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition” M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, S. P. DenBaars	Japanese Journal of Applied Physics, Vol. 42, pp. L235-L238	Journal
344.	2003	“Crystallographic wing tilt in laterally overgrown GaN” C. Rodel, H. Heinke, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars	Journal of Physics D: Applied Physics, Vol. 36, pp. A188-A191	Journal
345.	2003	“Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition” S. Keller, P. Waltereit, P. Cantu, U. K. Mishra, J. S. Speck	Optical Materials, Vol. 28, pp. 187-195	Journal
346.	2003	“Defect reduction in (1120) a-plane gallium nitride vial lateral epitaxial overgrowth by hydride vapor-phase epitaxy” B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura	Applied Physics Letters, Vol. 83, pp. 644-646	Journal
347.	2004	“High-power polarization-engineered GaN/A1GaN HEMTs without surface passivation” L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, Vol. 25, No. 1, pp. 7-9	Journal
348.	2004	“Power and linearity characteristics of GaN MISFETs on sapphire substrate” A. Chini, J. Wittich, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra	IEEE Electron Device Letters, Vol. 25, No. 2, pp. 55-57	Journal
349.	2004	“AlGaN/GaN current aperture vertical electron transistors with regrown channels” I. Ben-Yaacov, Y.-K. Seck, U. K. Mishra, S. P. DenBaars	Journal of Applied Physics, Vol. 95, No. 4, pp. 2073-2078	Journal
350.	2004	“Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells” M. D. Craven, P. Waltereit, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 84, No. 4, pp. 496-498	Journal
351.	2004	“Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition” A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, S. A. Ringel	Applied Physics Letters, Vol. 84, No. 3, pp. 374-376	Journal
352.	2004	“AlGaN/GaN polarization-doped field effect transistor for microwave power applications” S. Rajan, H. Xing, S. DenBaars, U. K. Mishra, D. Jena	Applied Physics Letters, Vol. 84, No. 9, pp. 1591-1593	Journal
353.	2004	“Radiative and nonradiative processes in strain-free Al_xGa_1-x/N films studied by time-resolved photoluminescence and positron annihilation techniques” T. Onuma, S. F. Chichibu, A. Uedona, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars	Journal of Applied Physics, Vol. 95, No. 5, pp. 2495-2504	Journal
354.	2004	“Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition” M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, J. S. Speck	Applied Physics Letters, Vol. 84, No. 8, pp. 1281-1283	Journal
355.	2004	“Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening” T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura	Applied Physics Letters, Vol. 84, No. 6, pp. 855-857	Journal
356.	2004	“Preparation of indium nitride micro-and nanostructures by ammonolysis of indium oxide” B. Schwenzer, L. Loeffler, R. Seshadri, S. Keller, F. F. Lange, S. P. DenBaars, U. K. Mishra	Journal of Materials Chemistry, Vol. 14, No. 4, pp. 637-641	Journal
357.	2004	“The growth of N-face GaN by MOCVD: effect of Mg, Si, and In” P. R. Tavernier, T. Margalith, J. Williams, D. S. Green, S. Keller, S. P. DenBaars, U. K. Mishra, S. Nakamura, D. R. Clarke	Journal of Crystal Growth, Vol. 264, No. 1-3, pp. 150-158	Journal
358.	2004	“Micro cavity effect in GaN-Based light-emitting diodes formed by laser lift-off and etch-back technique” T. Fujii, A. David, C. Schwach, P.M. Pattison, R. Sharma, K. Fujito, T. Margalith, S.P. DenBaars, C. Weisbuch, S. Nakamura	Japanese Journal of Applied Physics Part 2 – Letters, Vol. 43, No.3B, pp. L411-L413	Journal
359.	2004	“Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%” P. Waltereit, H. Sato, C. Poblenz, D. S. Green, J. S. Brown, M. McLaurin, T. Katona, S. P. DenBaars, J. S. Speck, J. H. Liang, M. Kato, H. Tamura, S. Omori, C. Funaoka	Applied Physics Letters, Vol. 84, No. 15, pp. 2748-2750	Journal
360.	2004	"Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1-xN" T. M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars	Applied Physics Letters, Vol. 84, No. 24, pp. 5025-5027	Journal
361.	2004	"Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes" K.-G. Gan, C.-K. Sun, S. P. DenBaars, J. E. Bowers	Applied Physics Letters, Vol. 84, No. 23, pp. 4675-4677	Journal
362.	2004	"Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth" T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura	Applied Physics Letters, Vol. 84, No. 19, pp. 3768-3770	Journal
363.	2004	"High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication" Y. L. Okuno, S. P. DenBaars, J. E Bowers	Applied Physics Letters, Vol. 84, No. 18, pp. 3483-3485	Journal
364.	2004	"Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride" Y. Gao, M. D. Craven, J. S. Speck, S. P. DenBaars, E. L. Hu	Applied Physics Letters, Vol. 84, No. 17, pp. 3322-3324	Journal
365	2004	“Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design” L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. Denbaars, U.K. Mishra	J. of Elec. Mat. 33 (5): 422-425	Journal
366	2004	“Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching” Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. Denbaars, S. Nakamura, E.L. Hu	Jpn. J. of Appl. Phys., 43 (5A) pp. L637-L639	Journal
367	2004	“Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching” E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu	Appl. Phys. Lett., 85 (5), 762-764	Journal
368	2004	“MOCVD growth of AlGaN films for solar blind photodetectors” P.C. Alejandro, S. Keller, T. Li, U.K. Mishra, J.S. Speck, S.P. Denbaars	Phys. Stat. Sol. A 201 (9); 2185-2189	Journal
369	2004	“Orientation-mismatched wafer bonding for polarization control of 1.3 µm-wavelength vertical cavity surface emitting lasers (VCSEL)” Y.L. Okuno, J. Geske, Y.J. Chiu, S.P. Denbaars, J.E. Bowers	Institute of Physics Conference Series 174: 367-370	Journal
370	2004	“Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN” T.M. Katona, M.D. Craven, J.S. Speck, S.P. DenBaars	Appl. Phys. Lett., 85 (8), 1350-1352	Journal
371	2004	“Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth” E. Skogen, J. Raring, S. DenBaars, L. Coldren	Elec. Lett. 40 (16), 993-994	Journal
372	2004	“Wafer Bonding of GaN and ZnSSe for optoelectronic applications” A. Murai, L. McCarthy, U. Mishra, S.P. DenBaars, C. Kruse, S. Figge, D. Hommel	Jpn. J. of Appl. Phys., 43 (10A), L1275-1277	Journal
373	2004	“Nonpolar a-plane p-type GaN and p-n junction diodes” A. Chakraborty, H. Xing, M.D. Craven, S. Keller, T. Mates, J.S. Speck, S.P. DenBaars, U.K. Mishra	J. of Appl. Phys., 96 (8), pp.4494-4499	Journal
374	2004	“AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate” P.J. Hansen, L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, T.R. Taylor, S.P. DenBaars, U.K. Mishra, R.A. York, J.S. Speck	J. Vac. Sci. Technol. B 22(5), 2479-2485	Journal
375	2004	“Growth of thick (1120) GaN using a metal interlayer” P.R. Tavernier, B. Imer, S.P. DenBaars, D.R. Clarke	Appl. Phys. Lett., 85 (20), 4630-4632	Journal
376	2005	“Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties” B. Schwenzer, J. Hu, R. Seshadri, S. Keller, S.P. DenBaars, U.K. Mishra	Chem. Mater., 16, (24): 5088-5095	Journal
377	2005	“Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electrolu-minescence emission peak” A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra	Appl. Phys. Lett., 85 (22), 5143-5145	Journal
378	2005	“Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching” E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu	Appl. Phys. Lett., 85 (22), 5179-5181	Journal
379	2005	“Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” H. Yu, L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, S.P. Denbaars, J.S. Speck, U.K. Mishra	Appl. Phys. Lett., 85 (22), 5254-5256	Journal
380	2005	“High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP” E.J. Skogen, J.S. Barton, J.W. Raring, L.A. Coldren, S.P. DenBaars	J. of Cryst. Growth 272, 564-569	Journal
381	2005	“Demonstration of negative chirp characteristics over wide wavelength range using monolithically integrated SG-DBR laser/electroabsorption modulator” J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren	Elec. Lett., 40 (25), 1599-1600	Journal
382	2005	“Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer” B. Moran, F. Wu, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck	J. of Cryst. Growth, 273, 38-47	Journal
383	2005	“A study of regrowth interface and material quality for a novel InP-based architecture” J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren	J. of Cryst. Growth, 273, 26-37	Journal
384	2005	“Widely Tunable Negative-Chirp SG-DBR Laser/EA-Modulated Transmitter” J.W. Raring, E.J. Skogen, L.A. Johansson, M.N. Sysak, S.P. DenBaars, L.A. Coldren	J. of Lightwave Tech., 23 (1), 80-86	Journal
385	2005	“Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on laterally epitaxially overgrown a-plane GaN” A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra	Appl. Phys. Lett., 86 (3), 031901	Journal
386	2005	“Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques” S.F. Chichibu, A. Uedono, T. Onuma, T. Sota, B.A. Haskell, S.P. DenBaars, J.S. Speck, S. Nakamura	Appl. Phys. Lett., Vol. 86 (2), 021914	Journal
387	2005	“Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on Free-standing m-plane GaN substrates” A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra	Jpn. J. of Appl. Phys., 44 (5), L173-L175	Journal
388	2005	“Measurement of second order susceptibilities of GaN and AlGaN” N.A. Sanford, A.V. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park, J.Y. Han, R.J. Molnar	J. of Appl. Phys., 97 (5), 053512	Journal
389	2005	“Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy” B.A. Haskell, T.J. Baker, M.B. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura	Appl. Phys. Lett.., 86 (11), 111917	Journal
390	2005	“Ion implanted AlGaN–GaN HEMTs with nonalloyed ohmic contacts” H. Yu, L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, U. Mishra	IEEE Elec. Dev. Lett., 26 (5), 283-285	Journal
391	2005	“Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy” B.A Haskell, A. Chakraborty, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura	J. of Elec. Mat., 34 (4), 357-360	Journal
392	2005	“Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN” G.A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck. S. Keller, S. Nakamura, S.P. Denbaars	Phys. Stat. Sol. A 202 (5), 846-849	Journal
393	2005	“Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering” T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S.P. Denbaars, U.K. Mishra	Phys. Stat. Sol A 202 (5), 837-840	Journal
394	2005	“Localized exciton dynamics in nonpolar (1120) In_xGa_1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” T. Onuma, A. Chakraborty, B.A. Haskell, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, S.F. Chichibu	Appl. Phys. Lett., 86 (15), 151918	Journal
395	2005	“Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide” C. Moe, H. Masui, M.C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J.S. Speck, S.P. DenBaars, C. Hussel, D. Emerson	Jpn. J. of Appl. Phys., 44 (17), L502-L504	Journal
396	2005	“Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates” S. Heikman, S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U.K. Mishra, J.S. Speck, S.P. DenBaars	Jpn. J. of Appl. Phys., 44 (13), L405-L407	Journal
397	2005	“Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor” B. Schwenzer, C. Meier, O. Masala, R. Seshadri, S.P. DenBaars, U.K. Mishra	J. Mater. Chem., 15 (19), 1891-1895	Journal
398	2005	“Optical evidence for lack of polarization in (1120) oriented GaN/(AlGa)N quantum structures” N. Akopian, G. Bahir, D. Gershoni, M.D. Craven, J.S. Speck, S.P. DenBaars	Appl. Phys. Lett., 86 (20), 202104	Journal
399	2005	“Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system” E.J. Skogen, L.A. Coldren, J.W. Raring, S.P. DenBaars	Appl. Phys. Lett., 86 (24), 241117	Journal
400	2005	Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors” H. Xing, S.P. DenBaars, U.K. Mishra	J. of Appl. Phys., 97 (11), 113703	Journal
401	2005	“Role of inclined threading dislocations in stress relaxation in mismatched layers” P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, S.P. DenBaars, J.S. Speck	J. of Appl. Phys., 97 (10), 103534	Journal
402	2005	“Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging” D. Lubbert, T. Baumbach, P. Mikulík, P. Pernot, L. Helfen, R. Köhler, T.M. Katona, S. Keller, S.P. DenBaars	J. of Phys. D-Appl. Phys., 38 (10A), A50-A54	Journal
403	2005	“Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire” Ghosh, S; Misra, P; Grahn, HT; Imer, B; Nakamura, S; DenBaars, SP; Speck, JS	J. of Appl. Phys. 98 (2): Art. 026105	Journal
404	2005	“Microstructural and optical evaluation of nitride light-emitting diodes and II-VI distributed Bragg reflectors combined by direct wafer bonding” Murai A, Kruse C, Samonji K, McCarthy L, Speck JS, Mishra UK, DenBaars SP, Hommel D	Jpn. J. of Appl. Phys. 44 (30): L958-L960	Journal
405	2005	“Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates” Chakraborty A, Baker TJ, Haskell” BA, Wu F, Speck JS, Denbaars SP, Nakamura S, Mishra UK	Jpn. J. of Appl. Phys. 44 (30): L945-L947	Journal
406	2005	“Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction” David A, Meier C, Sharma R, Diana FS, DenBaars SP, Hu E, Nakamura S, Weisbuch C, Benisty H	Appl. Phys. Lett. 87 (10): 101107	Journal
407	2005	“Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN” Chu SW, Chan MC, Tai SP, Keller S, DenBaars SP, Sun CK	Opt. Lett. 30 (18): 2463-2465	Journal
408	2005	“Influence of the dynamic access resistance in the gm and fT linearity of AlGaN/GaN HEMTs” Palacios T, Rajan S, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK	IEEE Trans. on Elec. Dev. 52 (10): 2117-2123	Journal
409	2005	“Quantum well intermixing and MOCVD regrowth for monolithic integration of 40 Gbit/s UTC type photodiodes with OW based components” Raring JW, Skogen EJ, Barton JS, Wang CS, DenBaars SP, Coldren LA	Elec. Lett. 41 (18): 1033-1034 SEP 1 2005	Journal
410	2005	“Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films” Keller S, Cantu P, Moe C, Wu Y, Keller S, Mishra UK, Speck JS, DenBaars SP	Jpn. J. of Appl. Phys. 44 (10): 7227-7233	Journal
411	2005	“Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate” Masui H, Chakraborty A, Haskell BA, Mishra UK, Speck JS, Nakamura S, DenBaars SP	Jpn. J. of Appl. Phys. 44 (43): L1329-L1332	Journal
412	2005	“GaN blue photonic crystal membrane nanocavities” Choi YS, Hennessy K, Sharma R, Haberer E, Gao Y, DenBaars SP, Nakamura S, Hu EL, Meier C	Appl. Phys. Lett. 87 (24): 243101	Journal
413	2005	“Demonstration of high saturation power/high gain SOAs using quantum well intermixing based integration platform” Raring JW, Skogen EJ, Masanovic ML, DenBaars SP, Coldren LA	Elec. Lett. 41 (24): 1345-1346	Journal
414	2005	“High-power AlGaN/GaN HEMTs for Ka-band applications” Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars SP, Speck JS, Mishra UK	IEEE Elec. Dev. Lett. 26 (11): 781-783	Journal
415	2006	“AlGaN/GaN high electron mobility transistors with InGaN back-barriers” Palacios T, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK	IEEE Elec. Dev. Lett. 27 (1): 13-15	Journal
416	2006	“Visible resonant modes in GaN-based photonic crystal membrane cavities” Meier C, Hennessy K, Haberer ED, Sharma R, Choi YS, McGroddy K, Keller S, DenBaars SP, Nakamura S, Hu EL	Appl Phys. Lett. 88 (3): 031111	Journal
417	2006	“Electron mobility in graded AlGaN alloys” Rajan S, DenBaars SP, Mishra UK, Xing HL, Jena D	Appl. Phys. Lett. 88 (4): Art. No. 042103	Journal
418	2006	“Design and demonstration of novel QW intermixing scheme for the integration of UTC-type photodiodes with QW-based components” Raring JW, Skogen EJ, Wang CS, Barton JS, Morrison GB, Demiguel S, DenBaars SP, Coldren LA	IEEE J. of Quant. Elect. 42 (2): 171-181	Journal
419	2006	“GaN light-emitting diodes with Archimedean lattice photonic crystals”David A, Fujii T, Matioli E, Sharma R, Nakamura S, DenBaars SP, Weisbuch C, Benisty H	Appl. Phys. Lett. 88 (7): 073510	Journal
420	2006	“Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs” Palacios T, Chini A, Buttari D, Heikman S, Chakraborty A, Keller S, DenBaars SP, Mishra UK	IEEE Trans. on Elect. Dev. 53 (3): 562-565	Journal
421	2006	“Improved quality (1120) a-plane GaN with sidewall lateral epitaxial overgrowth” Imer BM, Wu F, DenBaars SP, Speck JS	Appl. Phys. Lett. 88 (6): Art. No. 061908	Journal
422	2006	“Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution” David A, Fujii T, Sharma R, McGroddy K, Nakamura S, DenBaars SP, Hu EL, Weisbuch C, Benisty H	Appl. Phys. Lett. 88 (6): 061124	Journal
423	2006	“Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation” Chakraborty A, Haskell BA, Masui H, Keller S, Speck JS, DenBaars SP, Nakamura S, Mishra UK	Jpn. J. of Appl. Phys. 45 (2A): 739-741	Journal
424	2006	“Etching of Ga-face and N-face GaN by inductively coupled plasma” Waki I, Iza M, Speck JS, DenBaars SP, Nakamura S	Jpn. J. of Appl. Phys. 45 (2A): 720-723	Journal
425	2006	“Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum wells” Onuma T, Keller S, DenBaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF	Appl. Phys. Lett. 88 (11): 111912	Journal
426	2006	“Photonic crystal laser lift-off GaN light-emitting diodes” David A, Fujii T, Moran B, Nakamura S, DenBaars SP, Weisbuch C, Benisty H	Appl. Phys. Lett. 88 (13): 133514	Journal
427	2006	“Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment” Shen L, Palacios T, Poblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK	IEEE Elec. Dev. Lett. 27 (4): 214-216	Journal
428	2006	“Effect of the nucleation conditions on the polarity of AlN and GaN films grown on C-face 6H-SiC” Keller S, Fichrenbaum N, Wu F, Lee G, DenBaars SP, Speck JS, Mishra UK	Jpn. J. of Appl. Phys. 45 (11): L322-L325	Journal
429	2006	“Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy” Misra P, Behn U, Brandt O, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS	Appl. Phys. Lett. 88 (16): 161920	Journal
430	2006	“Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs” Moe CG, Schmidt MC, Masui H, Chakraborty A, Vampola K, Newman S, Moran B, Shen L, Mates T, Keller S, Denbaars SP, Emerson D	J. of Elect. Mat. 35 (4): 750-753	Journal
431	2006	“Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances” Chakraborty A, Shen L, Masui H, DenBaars SP, Mishra UK	Appl. Phys. Lett. 88 (18): 181120	Journal
432	2006	“High performance deeply-recessed GaN power HEMTs without surface passivation” Shen L, Chakraborty A, McCarthy L, Fichtenbaum N, Keller S, DenBaars SP, Mishra UK	Elect. Lett. 42 (9): 555-556	Journal
433	2006	“Optimization of AlGaN/GaN HEMTs for high frequency operation” Palacios T, Dora Y, Chakraborty A, Sanabria C, Keller S, DenBaars SP, Mishra UK	Phys. Stat. Sol. A 203 (7): 1845-1850	Journal
434	2006	“High-performance E-mode AlGaN/GaN HEMTs” Palacios T, Suh CS, Chakraborty A, Keller S, DenBaars SP, Mishra UK	IEEE Elec. Dev. Lett. 27 (6): 428-430	Journal
435	2006	“Novel devices based on the combination of nitride and II-VI materials” Murai A, Kruse C, McCarthy L, Mishra UK, DenBaars SP, Hommel D	Phys. Stat. Sol. A 203 (7): 1771-1777	Journal
436	2006	“Crystal quality and growth evolution of aluminum nitride on silicon carbide” Moe CG, Wu Y, Keller S, Speck JS, DenBaars SP, Emerson D	Phys. Stat. Sol. A 203 (7): 1708-1711	Journal
437	2006	“AlGaN/AlN distributed Bragg reflectors for deep ultraviolet wavelengths” Moe CG, Wu Y, Piprek J, Keller S, Speck JS, DenBaars SP, Emerson D	Phys. Stat. Sol. A 203 (8): 1915-1919	Journal
438	2006	“Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction” Barabash RI, Ice GE, Liu W, Roder C, Figge S, Einfeldt S, Hommel D, Katona TM, Speck JS, DenBaars SP, Davis RF	Phys. Stat. Sol. B 243 (7): 1508-1513	Journal
439	2006	“Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire” Ghosh S, Misra P, Grahn HT, Imer B, Nakamura S, DenBaars SP, Speck JS	Phys. Stat. Sol. B 243 (7): 1441-1445	Journal
440	2006	“Effect of ohmic contacts on buffer leakage of GaN transistors” Dora Y., Chakraborty A., Heikman S., McCarthy L., Keller S., DenBaars S.P., Mishra U.K.	IEEE Electron Device Letters Vol 27 No 7 529-531	Journal
441	2006	“Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask” Chakraborty A., Kim K.C., Wu F., Speck J.S., DenBaars S.P., Mishra U.K.	Applied Physics Letters 89 041903	Journal
442	2006	“Effect of threading dislocation density on Ni/n‑GaN Schottky diode I-V characteristics” Arehart A.R., Moran B., Speck J.S., Mishra U.K., DenBaars S.P., Ringel S.A.	Journal of Applied Physics 100 023709	Journal
443	2006	“Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1‑xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates” T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, S. F. Chichibu	Applied Physics Letters 89 091906	Journal
444	2006	“Exciton dynamics in nonpolar (11 0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, et. al	Phys. Stat. Sol.C 3 No 6 2082-2086	Journal
445	2006	“X-Ray Microdiffraction Imaging Investigations of Wing Tilt In Epitazially Overgrown GaN” D. Lubbert, P. Mikulik, P. Pernot, S. Keller, et. al.	Phys. Stat. Sol.A 203 No 7 1733-1738	Journal
446	2006	“Improved Processing Technology for GaN-Capped deeply-Recessed GaN HEMTs Without Surface Passivation” L. Shen, L. McCarthy, T. Palacios, M.H. Wong, et. al.	IEEE Electron Device Letters Device Research Conference, 2006 64th 101-102	Conference Preceeding
447	2006	“Transient wavefunction analysis of a phononic bandgap nano-crystal” K.H. Lin, C.F. Chang, A.T. Tien, et al.	Conference on Lasers & Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS)	Conference Preceeding
448	2006	“High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates” Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. DenBaars, U. Mishra	IEEE Electron Device Letters Vol. 27 No.9 713-715	Conference Preceeding and Journal
449	2006	“50 nm AlGaN/GaN HEMT Technology for mm-wave Applications” T. Palacios, N. Fichtenbaum, S. Keller, S. DenBaars, U. Mishra	IEEE 64th Device Research Conference 99-100	Conference Preceeding
450	2006	“40 Gbit/s photonic receivers integrating UTC photodiodes with high- and low-confinement SOAs using quantum well intermixing and MOCVD regrowth” J. Raring, L. Johansson, E. Skogen, M. Sysak, H. Poulsen, S. DenBaars, L. Coldren	IEEE Electron Device Letters Vol. 42 No. 16 942-943	Journal
451	2006	“Nitride-based High Electron Mobility Transistors with a GaN Spacer” T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, S. DenBaars, U. Mishra, et. al.	Applied Physics Letters 89 073508	Journal
452	2006	“Effects of Phosphor Application Geometry on White Light-Emitting Diodes” H. Masui, S. Nakamura and S. P. DenBaars	Japanese Journal of Applied Physics Vol 45 No 34 L910-L912	Journal
453	2006	“First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes” H. Masui, T. Baker, R. Sharma, P. Pattison, M. Iza, H. Zhong, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics Vol 45 No 34 L904-L906	Journal
454	2006	“Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates” T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu	Applied Physics Letters 89 091906	Journal
455	2006	“Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors” S. Chichibu, A. Uedono, T. Onuma, B. Haskell, A. Chakrabort, T. Koyama, P. Fini, S. Keller, S. DenBaars, J. Speck, U. Mishra, S. Nakamura, et. al	Nature Materials Vol. 5 810-816	Journal
456	2006	“Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells” S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra	Journal of Applied Physics 100 054314	Journal
457	2006	“Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding” A. Murai, D. Thompson, C.Y. Chen, U. Mishra, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics Vol 45 No 39 L1045-L1047	Journal
458	2006	“Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well” K.H. Lin, C.F. Chang, C.C. Pan, J.I. Chyi, S. Keller, U. Mishra, S. DenBaars, and C.K. Sun	Applied Physics Letters 89 143103	Journal
459	2006	“Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, B. Haskell, S. Newman, S. DenBaars, J. Speck and S. Nakamura	Journal of Crystal Growth 297 321-325	Journal
460	2006	“Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature” H. Masui, M. Schmidt, A. Chakraborty, S. Nakamura and S. DenBaars	Japanese Journal of Applied Physics Vol 45 No 10A 7661-7666	Journal
461	2006	“Single-Chip 40Gb/s Widely-TunableTransceiverswithIntegrated SG-DBR Laser, QW EAM, UTC Photodiode, and Low Confinement SOA” J. Raring, L. Johansson, E. Skogen, M. Sysak, H. Poulsen, S. DenBaars, L. Coldren	Semiconductor Laser Conference, 2006. Conference Digest. IEEE 20th International Conference	Conference Preceeding
462	2006	“Cracking of III-nitride layers with strain gradients” A. E. Romanov, G. E. Beltz, P. Cantu, F. Wu, S. Keller, S. P. DenBaars, and J. S. Speck	Applied Physics Letters 89 161922	Journal
463	2006	“Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding” A. Murai, D. Thompson, H. Masui, N. Fellows, U. Mishra, S. Nakamura, and S. DenBaars	Applied Physics Letters 89 171116	Journal
464	2006	“Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition” B. Imer, F. Wu, M. Craven, J. Speck and S. DenBaars	Japanese J. of Appl. Phys Vol 45 No 1 8644-8647	Journal
465	2006	“Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN” A. Chakraborty, K.C. Kim, F. Wu, B. Haskell, S. Keller, J. Speck, S. Nakamura, S. DenBaars and U. Mishra	Japanese J. of Appl. Phys Vol 45 No 11 8659-8661	Journal
466	2006	“Realization of high hole concentrations in Mg doped semipolar (10 ) GaN” J. F. Kaeding, H. Asamizu, H. Sato, M. Iza, T. E. Mates, S. P. DenBaars, J. S. Speck, and S. Nakamura	Applied Physics Letters 89 202104	Journal
467	2006	“Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy” A. Armstrong, A. Chakraborty, J. S. Speck, S. P. DenBaars, U. K. Mishra, and S. A. Ringel	Applied Physics Letters 89 262116	Journal
468	2006	“Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (11 2)-plane GaN” H. Masui, T. Baker, M. Iza, H. Zhong, S. Nakamura, and S. DenBaars	Journal of Applied Physics 100 113109	Journal
469	2006	“Increased Power from deep ultraviolet LEDs via precursoe selection” C. Moe, T. Onuma, K. Vampola, N. Fellows, H. Masui, S. Newman, S. Keller, et. al.	Journal of Crystal Growth 298 710-713	Journal
470	2007	“Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures” B. Monemar, P. Paskov, J. Bergman, S. Keller, S. DenBaars, U. Mishra	Phys. Stat. Sol. A 204 No. 1 304-308	Journal
471	2007	“40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters” J. Raring, L. Johansson, E. Skogen, M. Sysak, H. Poulsen, S. DenBaars, L. Coldren	Journal of Lightwave Technology Vol 25 No 1 239-248	Journal
472	2007	“Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy” U. Behn, P. Misra , H. Grahn, B. Imer, S. Nakamura , S. DenBaars , J. Speck	Phys Stat Sol A 204 No. 1 299-303	Journal
473	2007	“Growth of Heteroepitaxial ZnO Thin Films on GaN-Buffered Al2O3 (0001) Substrates by Low-Temperature Hydrothermal Synthesis at 90 °C” J. H. Kim, E.-M. Kim, D. Andeen, D. Thomson, S. P. DenBaars, F. Lange	Advanced Functional Materials Vol 17 No 3 463-471	Journal
474	2007	“Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InxGa1−xN∕GaN multiple and single quantum wells” S. Keller, S. P. DenBaars, et. al.	The American Physical Review B 75 035324	Journal
475	2007	“Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness” P. Pattison, A. David, R. Sharma, C. Weisbuch, S. DenBaars, and S. Nakamura	Applied Physics Letters 90 031111	Journal
476	2007	“Triangular pattern formation on silicon through self-organization of GaN nanoparticles” K. Prabhakaran, B. Schwenzer, S. DenBaars and U. Mishra	Applied Surface Science 253 4773-4776	Journal
477	2007	“High Output Saturation and High-Linearity Uni-Traveling-Carrier Waveguide Photodiodes” J. Klamkin, A. Ramaswamy, L. Johansson, S. DenBaars, J. Bowers, et. al.	IEEE Photonics Technology Letters Vol. 19 No.3 149-151	Journal
478	2007	“Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films” A. Chakraborty, B. Haskell, F. Wu, S. Keller, S. DenBaars, S. Nakamura, J. Speck, and U. Mishra	Japanese Journal of Applied Physics Vol 46 No 2 542-546	Journal
479	2007	“High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates” A. Tyagi, H. Zhong, N. Fellows, M. Iza, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 7 L129-L131	Journal
480	2007	“High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes” M. Schmidt, K.C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. DenBaars, and J. Speck	Japanese Journal of Applied Physics Vol 46 No 7L126-L128	Journal
481	2007	“Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes” M. Schmidt, K.C Kim, R. Farrell, D. Feezell, D. Cohen, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 9 L190-L191	Journal
482	2007	“Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures” N. Fichtenbaum, C. Neufeld, C. Schaake, Y. Wu, M.H. Wong, M. Grundmann, S. Keller, S. DenBaars, J. Speck, and U. Mishra	Japanese Journal of Applied Physics Vol 46 No 10 L230-L233	Journal
483	2007	“Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate” A. Chakraborty, C. Moe, Y. Wu, T. Mates, S. Keller, J. Speck, S. DenBaars, and U. Mishra	Journal of Applied Physics 101 053717	Journal
484	2007	“Defect-mediated surface morphology of nonpolar m-plane GaN” A. Hiri, B. Haskell, M. McLaurin, F. Wu, M. Schmidt, K. Kim, T. Baker, S. DenBaars, S. Nakamura, J. Speck	Applied Physics Letters 90 121119	Journal
485	2007	“Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy” D. Kamber, Y. Wu, E. Letts, S. DenBaars, J. Speck, S. Nakamura, and S. Newman	Applied Physics Letters 90 122116	Journal
486	2007	“AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes” D. Feezell, M. Schmidt, R. Farrell, K. Kim, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 13 L284-L286	Journal
487	2007	“Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs” K. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. Speck, S. Nakamura, S. DenBaars	Phys. Stat. Sol (RRL) Vol 1 No 3 125-127	Letter
488	2007	“Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells” S. Keller, N. A. Fichtenbaum, C. Schaake, C. J. Neufeld, A. David, E. Matioli, Y. Wu, S. P. DenBaars , J. S. Speck, C. Weisbuch , U. K. Mishra	Phys. Stat. Sol B 224 No 6 1797-1801	Journal
489	2007	“MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures” N. A. Fichtenbaum , C. J. Neufeld , C. Schaake , Y. Wu , M. H. Wong , M. Grundmann , S. Keller, S. P. DenBaars , J. S. Speck , U. K. Mishra	Phys. Stat. Sol B 244 No. 6 1802-1805	Journal
490	2007	“Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques” S. F. Chichibu; A. Uedono; T. Onuma; B. A. Haskell; A. Chakraborty; T. Koyama; P. T. Fini, S. Keller; S. P. Denbaars; J. S. Speck; U. K. Mishra; S. Nakamura; S. Yamaguchi; S. Kamiyama; H. Amano; I. Akasaki; J. Han; T. Sota	Philosophical Magazine Vol 87 No 13 2019-2039	Journal
491	2007	“Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers” D. F. Feezell, R. M. Farrell, M. C. Schmidt, H. Yamada, M. Ishida, S. P. DenBaars, D. A. Cohen, and S. Nakamura	Applied Physics Letters 90 181128	Journal
492	2007	“Growth and characterization of N-polar InGaN/GaN multiquantum wells” S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S. P. DenBaars, and U. K. Mishra	Applied Physics Letters 90 191908	Journal
493	2007	“Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells” S. Khatsevich, D. H. Rich, S. Keller, and S. P. DenBaars	Journal of Applied Physics 101 093515	Journal
494	2007	“Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates” A. Tyagi, H. Zhong, R. Chung, D. Feezell, M. Saito, K. Fujito, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 19 L444-L445	Journal
495	2007	“Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)” B. Imer, F.Wu, J. Speck, and S. DenBaars	Journal of Crystal Growth 306 330-338	Journal
496	2007	“Mega-cone blue LEDs based on ZnO/GaN direct wafer bonding” A. Murai, D. B. Thompson, H. Masui, N. Fellows, U. K. Mishra, S. Nakamura, S. P. DenBaars	Phys Stat Sol C 4 No 7 2756-2759	Journal
497	2007	“Deep-recessedGaNHEMTsusingselectiveetchtechnologyexhibitinghigh microwave performance without surface passivation” L. Shen, Y. Pei, L. McCarthy, C. Poblenz, et. al.	IEEE Electron Device Letters Microwave Symposium, IEEE/MTT-S International 623-626	Journal / Conference Proceeding
498	2007	“High power and high efficiency blue light emitting diode on freestanding semipolar (10 ) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, F. Wum R. Chung, M. Saito, K. Fujito, et. al.	Applied Physics Letters 90 233504	Journal
499	2007	“High power and high efficiency green light emitting diode on free-standing semipolar (11 2) bulk GaN substrate” H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. Chung, M. Saito, K. Fujito, et. al.	Phys. Stat. Sol (RRL) 1 No. 4 162-164	Journal
500	2007	“Progress in the growth of nonpolar gallium nitride” B. Haskell, S. Nakamura , S. DenBaars , J. Speck	Phys. Stat. Sol B 244 No 8, 2847-2858	Journal
501	2007	“Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents” H. Masui, H. Sato, H. Asamizu, M. C. Schmidt, N.N. Fellows, S. Nakamura, and S.P. DenBaars	Japanese Journal of Applied Physics Vol. 46 No. 25 L627- L629	Journal
502	2007	“Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes” D. Feezell, S. DenBaars, J. Speck, S. Nakamura	Compound Semiconductor Integrated Circuit Symposium (CISC) IEEE 1-4	Conference Proceeding
503	2007	“Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate” H. Zhong, A. Tyagi, N. Fellows, R. Chung, M. Saito, K. Fujito, J. Speck, S. DenBaars, S. Nakamura	IEEE Electronics Letters Vol. 43 No. 15	Journal
504	2007	“Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” A. Chakraborty, M. McLaurin, B. A. Haskell, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, et. al.	Journal of Vacuum Science Technology B Vol. 25, Issue 4 1524-1528	Journal
505	2007	“Characterization and Discrimination of AlGaN- and GaN-related Deep Levels in AlGaN/GaN Heterostructures” A. Armstrong, A.Chakraborty, J. Speck, S. DenBaars, et al.	Physics of Semiconductors 28th International Conference American Institute of Physics	Conference Proceeding
506	2007	“Direct Evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes” H. Masui, N. Fellows, H. Sato, S. Nakamura, S. DenBaars	Allied Optics Vol. 46 No. 23 5974-5978	Journal
507	2007	“Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes” R. Farrell, D. Feezell, M. Schmidt, D. Haeger, K. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. Cohen, J. Speck, S. DenBaars, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 32 L761-L763	Journal
508	2007	“Direct water photoelectrolysis with patterned n-GaN” I. Waki, D. Cohen, R. Lal, U. Mishra, S. DenBaars, and S. Nakamura	Applied Physics Letters 91 093519	Journal
509	2007	“Monolithically Integrated Coherent Receiver for Highly Linear Microwave Photonic Links” J. Klamkin, L. Johansson, A. Ramaswamy, J. Bowers, S. DenBaars, L. Coldren	The 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS)	Conference Proceeding
510	2007	“Vertical defects in heavily Mg-doped Al0.69Ga0.31N” Y. Wu, C. G. Moe, S. Keller, S. P. DenBaars, J. S. Speck	Phys Stat. Sol A 204 No 10 3423-3428	Journal
511	2007	“Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance” Y. Pei, L. Shen, T. Palacios, N. Fichtenbaum, L. McCarthy, S. Keller, S. DenBaars, U. Mishra	Japanese Journal of Applied Physics Vol 46 No 35 L842-L844	Journal
512	2007	“Nonpolar gallium nitride laser diodes are the next new blue” D. Feezell, S. Nakamura, S. DenBaars, J. Speck	Laser Focus World 79-83	Magazine
513	2007	“Photoelectrochemical Properties of Nonpolar and Semipolar GaN” K. Fujii, Y. Iwaki, H. Masui, T. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. Speck, S. DenBaars, S.Nakamura , and K. Ohkawa	Japanese Journal of Applied Physics Vol.46 No. 10A 6573-6578	Journal
514	2007	“High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate” K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S.P. DenBaars, J.S. Speck, and S. Nakamura	Japanese Journal of Applied Physics Vol 46 No 40 L960-L962	Journal
515	2007	“Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition” N. Fichtenbaum, C. Schaake, T. Mates, C. Cobb, S. Keller, S. DenBaars, and U. Mishra	Applied Physics Letters 91 172105	Journa;
516	2007	“Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition” S. Keller, N. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S. DenBaars, J. Speck, and U. Mishra	Journal of Applied Physics 102 083546	Journal
517	2007	“Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition” K. C. Kim, M. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. DenBaars, J. Speck and K Fujito	Applied Physics Letters 91 181120	Journal
518	2007	“Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature” H. Masui, M. Schmidt, K.C. Kim, A. Chakraborty, S. Nakamura, and S. DenBaars	Japanese Journal of Applied Physics Vol 46 No 11 7309-7310	Journal
519	2007	“Formation and reduction of pyramidal hillocks on m-plane {1100} GaN” A. Hirai, Z. Jia, M. C. Schmidt, R. M. Farrell, S. P. DenBaars, S. Nakamura, J. S. Speck, and K. Fujito	Applied Physics Letters 91 191906	Journal
520	2007	“Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)” B. Imer, B. Haskell, S. Rajan, S. Keller, U. Mishra, S. Nakamura, J. Speck, S. DenBaars	Journal of Material Research Vol 23 No 2 551-555	Journal
521	2007	“Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz” Y. Pei, R/ Chu, N. Fichtenbaum, Z. Chen, D. Brown, L. Shen, S. Keller, S. DenBaars, U. Mishra	Japanese Journal of Applied Physics Vol 46 No 45 L1087-L1089	Journal
522	2007	“Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes” H. Yamada, K. Iso, M. Saito, K. Fujito, S. DenBaars, J. Speck, and S. Nakamura