You are here
Publications
No. |
|
Year |
|
Title and Authors |
|
Publisher |
|
Category |
1 |
|
1986 |
|
"Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner and H.C. Lee |
|
J. Crystal Growth, 77, 186 |
|
Refereed Conference Proceedings |
2 |
|
1987 |
|
"The Effects of Hydrodynamics Interrupted Growth and Growth Temperature on the Interface Properties of AlGaAs/GaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition", S.P. DenBaars, H.C. Lee, A. Hariz, and P.D. Dapkus |
|
Technical Program of the Electronic Materials Conference, paper N7, 50 |
|
Refereed Conference Proceedings |
3 |
|
1987 |
|
"GaAs/AlGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy",S.P. DenBaars, C.A. Hariz, and P.D. Dapkus |
|
Appl. Phys. Lett. 51, 1530 |
|
Journal |
4 |
|
1987 |
|
"The Growth of AlGaAs/GaAs Heterostructures by Atomic Layer Epitaxy" Epitaxy of Semiconductor Layered Structures, S.P. DenBaars, A. Hariz, C.A. Beyler, B.Y. Maa, Q. Chen, and P.D. Dapkus |
|
Mat. Res. Soc. Proceedings, Vol. 102, p. 527, Boston, MA |
|
Refereed Conference Proceedings |
5 |
|
1987 |
|
"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", S.P. DenBaars, P.D. Dapkus, Q. Chen, W.G. Jeong, and B.Y. Maa |
|
Materials Research Society, Symposium C, Epitaxy of Semiconductor Layered Structures, (Paper C7.9), Boston, MA, December |
|
Refereed Conference Proceedings |
6 |
|
1987 |
|
"AlGaAs/GaAs Quantum Wells Grown by Atomic Layer Epitaxy", S.P. DenBaars, C.A. Beyler,A. Hariz, and P.D. Dapkus |
|
Technical Digest Third Biennial OMVPE Workshop, (Paper A2), Brewster, MA, September |
|
Conference Proceedings |
7 |
|
1988 |
|
"Atomic Layer Epitaxy for the Growth of Heterostructure Devices", S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz, and K. Dzurko |
|
Crystal Growth, 93, 195 |
|
Journal |
8 |
|
1988 |
|
"Thermal and Laser Assisted Atomic Layer Epitaxy of Compound Semiconductors", S.P. DenBaars, P.D. Dapkus, J.S. Osinski, M. Zandian, C.A. Beyler, and K.M. Dzurko |
|
Int. Symp. GaAs and Related Compounds, Atlanta, GA 1988, Inst. Phys. Conf. Ser. No. 96, 89 |
|
Refereed Conference Proceedings |
9 |
|
1989 |
|
"Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, and A. Melas |
|
J. Electrochem. Soc., 136, No. 7, 2067 |
|
Journal |
10 |
|
1989 |
|
"Minority Carrier Lifetimes in Undoped AlGaAs/GaAs Multiple Quantum Wells", A. Hariz, P.D. Dapkus, H.C. Lee, E.P. Menu, and S.P. DenBaars |
|
Appl. Phys. Lett., 54, 635 |
|
Journal |
11 |
|
1989 |
|
"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", P.D. Dapkus, S.P. DenBaars, Q. Chen, W.G. Jeong, and B.Y. Maa |
|
Prog. Crystal Growth and Charact., 19, 137 |
|
Journal |
12 |
|
1989 |
|
"Atomic Layer Epitaxy of Compound Semiconductors with Metalorganic Precursors", S. P. DenBaars and P.D. Dapkus |
|
J. Crystal Growth, 98, 195 |
|
Journal |
13 |
|
1990 |
|
"Atmospheric Atomic Layer Epitaxy", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars, |
|
Acta Polytechnica Scandivica, Ch. 195, 39 |
|
Journal |
14 |
|
1991 |
|
"Atmospheric Atomic Layer Epitaxy: Mechanisms and Applications", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars |
|
J. Crystal Growth, 107, 73 |
|
Journal |
15 |
|
1992 |
|
"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves", D.B. Young, D.I. Babic, S.P. DenBaars, and L.A. Coldren |
|
Electronic Lett. 28, No.20, 1873 |
|
Journal |
16 |
|
1992 |
|
"Growth of High Quality InxGa1-xAs/InP Quantum Wells with Tertiarybutylarsine and Tertiarybutylphosphine", M. P. Mack, C. M. Reaves, P. J. Corvini, S.P. DenBaars, M. S. Leonard, M. Mondry and J. L. Merz |
|
Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper J2, p.39 |
|
Conference Proceedings |
17 |
|
1992 |
|
"Fe-Doped Semi-Insulating InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine, Trimethylindium, and Ferrocene", P.J. Corvini, M. Hashemi, S.P. DenBaars, J.E. Bowers |
|
Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper P4, p.54 |
|
Conference Proceedings |
18 |
|
1992 |
|
"Wide tunability and large mode-suppression in a multisection semiconductor laser using sampled gratings", V.J. Jayaraman, L.A. Coldren, S.P. DenBaars, A. Mather, and P.D. Dapkus |
|
Proceedings of the Integrated Photonics Research Conference, New Orleans, LA, WF-1, pp. 54-55 |
|
Conference Proceedings |
19 |
|
1992 |
|
"High Performance Heterojunction InGaAs/InP JFET grown by MOCVD using Tertiarybutylarsine and Tertiarybutylphosphine", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra |
|
P7, IEDM Tech. Digest, 311 |
|
Journal |
20 |
|
1992 |
|
"Visible Light Emitting Diodes: Materials Growth and Properties" S.P. DenBaars, |
|
Solid State Luminescence-Theory, Materials & Devices, Chapter 8, pp. 263-291. A.H. Kitai, editor ( Chapman and Hall, London, England ) |
|
Book Chapter |
21 |
|
1993 |
|
"High Speed p+ GaInAs-n-InP Heterojunction JFETs (HJFETs) grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra |
|
IEEE Electron. Device Lett. 14, No. 2., 60 |
|
Journal |
22 |
|
1993 |
|
"High Speed Heterojunction JFETs grown by Non-Hydride MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra |
|
Proceedings ofUltrafast electronics and Optoelectronics Conference |
|
Conference Proceedings |
23 |
|
1993 |
|
"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine and Tertiarybutylphosphine", M. E. Heimbuch, A.L. Holmes, S.P. DenBaars, L.A. Coldren, and J.E. Bowers |
|
Electronics Letters, 29, No. 4, pp.340-341 |
|
Journal |
24 |
|
1993 |
|
"Novel High Power Heterojunction JFETs (HJFETs) Grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra |
|
IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 375-378, IEEE Society, Piscataway, New Jersey |
|
Conference Proceedings |
25 |
|
1993 |
|
"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid Group V Sources", M. E. Heimbuch A.L. Holmes, Jr., S.P. DenBaars, L.A. Coldren, and J.E. Bowers |
|
IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 239-242, IEEE Society, Piscataway, New Jersey |
|
Conference Proceedings |
26 |
|
1993 |
|
"Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs(11) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnatmurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. DenBaars |
|
Mat. Research Soc. Proceedings, San Francisco, April |
|
Refereed Conference Proceedings |
27 |
|
1993 |
|
"35 GHz fmax InP JFET Grown by MOCVD Using Tertiarybutylphosphine (TBP)", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra |
|
Electronics Lett. 29, No. 4, pp.372-374 |
|
Journal |
28 |
|
1993 |
|
"Low Threshold Strained InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP", S.P. DenBaars, A.L.Holmes, Jr., M. E. Heimbuch, and C. M. Reaves |
|
Late News paper, Extended Abstracts of European Workshop on MOVPE-V, pp. E-19-21, Malmo, Sweden, June |
|
Conference Proceedings |
29 |
|
1993 |
|
"Strained InGaAsP Single Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", A.L. Holmes, M.E. Heimbuch, and S.P. DenBaars |
|
Appl. Physics Lettters, V63, N25:3417-3419, December |
|
Journal |
30 |
|
1993 |
|
"Direct Formation of Quantum-sized Dots from Uniform Coherent Islands of InGaAs on GaAs Surfaces", D.Leonard, M. Krishnamurty, C.M. Reaves, P.M. Petroff, and S.P. DenBaars |
|
, V63, N23:3203-3205, December |
|
Journal |
33 |
|
1993 |
|
"Low Threshold 1.5 Mu-M Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", M. E. Heimbuch, A. L. Holmes, M. P. Mack, S. P. DenBaars |
|
Electronics Letters, V29, N4: 340-342 |
|
Journal |
34 |
|
1993 |
|
"35 GHz F (Max) InP JFet Grown by Non-Hydride MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra |
|
Electronics Letters, V29, N4: 372-373 |
|
Journal |
35 |
|
1993 |
|
"High-Speed P+ GaInAs-N InP Heterojunction JFets (HJFETS) Grown by MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra |
|
IEEE Electron Device Letters, V14, N2: 60-62 |
|
Journal |
36 |
|
1993 |
|
"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550 NM) Lightwaves", D. B. Young, D. I. Babic, S. P. DenBaars, L. A. Coldren |
|
Electronics Letters, V28, N20: 1873-1874 |
|
Journal |
37 |
|
1993 |
|
"Photoluminescence Studies of a Quantum Well Modulated by Facetting on GaAs(110) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnamurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, and S.P. DenBaars |
|
Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society. Symposium Proceedings Vol. 312) |
|
Conference Proceedings |
38 |
|
1994 |
|
"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.5 5µm InxGa1-xAsInP Quantum Well Lasers", M. Heimbuch, A.L. Holmes, C.M. Reaves, S.P. DenBaars, and L.A. Coldren |
|
Journal of Electronic Materials, V23, N2:87-91, February |
|
Journal |
39 |
|
1994 |
|
"High Performance InP JFET grown by Metalorganic Chemical Vapor Deposition using Tertiarybutylphosphine (TBP) as the Phosphorous Source", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra |
|
Journal of Electronic Materials, V23, N2:233-237, February |
|
Journal |
40 |
|
1994 |
|
"Formation of Coherently Strained Self-Assembled InP Quantum Islands on InGaP/GaAs", S. P. DenBaars, C. M. Reaves, V. Bresslerhill, S. Varma |
|
Journal of Crystal Growth, V145, N1-4: 721-727 |
|
Journal |
41 |
|
1994 |
|
"Flow Modulation Epitaxy of GaXIn(1-X)As/AlAs Heterostructures on InP for Resonant Tunneling Diodes”, B.P. Keller, J.C. Yen, A.L.Homes, S.P.DenBaars, U.K.Mishra |
|
Applied Surface Science, V82-3, 126-131 |
|
Journal |
42 |
|
1994 |
|
"Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room-Temperature Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, E. Hu, S. P. DenBaars |
|
Journal of Vacuum Science and Technology B, V12, N6: 3704-3707 |
|
Journal |
43 |
|
1994 |
|
"MBE and MOCVD Growth and Properties of Self-Assembling Quantum Dot Arrays in III-V Semiconductor Structures", P. M. Petroff, S. P. DenBaars |
|
Superlattices and Microstructures, V15, N1: 15-21 |
|
Journal |
44 |
|
1994 |
|
"GaXIn1-XAs/AlAs Resonant Tunneling Diodes Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", B. P. Keller, J. C. Yen, S. P. DenBaars, U. K. Mishra |
|
Applied Physics Letters, V65, N17: 2159-2161 |
|
Journal |
45 |
|
1994 |
|
"Widely Tunable Continuous-Wave InGaAsP/LnP Sampled Grating Lasers", V. Jayaraman, M. E. Heimbuch, L. A. Coldren, S. P. DenBaars |
|
Electronics Letters, V30, N18: 1492-1494. |
|
Journal |
46 |
|
1994 |
|
"Field-Induced Guide Antiguide Modulators on InGaAsP/InP", S. L. Lee, M. E. Heimbuch, C. J. Mahon, N. Dagli |
|
Electronics Letters, V30, N12:954-956 |
|
Journal |
47 |
|
1994 |
|
"Passivation of InGaAs/InP Surface Quantum Wells by Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, J. Merz, S. P. DenBaars |
|
Applied Physics Letters, V64, N20: 2658-2660 |
|
Journal |
48 |
|
1994 |
|
"Continuous-Wave Operation of Sampled Grating Tunable Lasers with 10mwatt Output Power, >60nm Tuning, and Monotonic Tuning CVharacteristics", V.J. Jayaraman, M.E. Heimbuch, L.A. Coldren, and S.P. DenBaars |
|
IEEE Proceedings of the 6th Intl. InP and Related Materials Conf |
|
Conference Proceedings |
49 |
|
1994 |
|
"Compressively Strained 1.55µm InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown with TBA and TBP", S.P. DenBaars, A.L. Holmes, M.H. Heimbuch |
|
SPIE Proceedings of the Optoelectronics/Laser Conf. |
|
Conference Proceedings |
50 |
|
1994 |
|
"Coupling of Terahertz Radiation with Wispering Gallery Mode Microdisk Lasers", K.B. Nordstrom, S.J. Allen, M.E. Heimbuch, S.P. DenBaars, A.F.J. Levi |
|
Proceedings of the Conf on Laser and Electro-Optics |
|
Conference Proceedings |
51 |
|
1994 |
|
"GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes", C.M. Reaves, J.C. Yen, N.A. Cevallos, U.K. Mishra, and S.P. DenBaars |
|
Compound Semiconductor Epitaxy, edited by C.W. Tu, L.A. Kolodziejski, and V.R. McCrary (Materials Research Society Symposium Proceedings Vol. 320), 147-152 |
|
Conference Proceedings |
52 |
|
1995 |
|
"Characterization of MOCVD-Grown InP on InGaP/GaAs", C. M. Reaves, V. Bresslerhill, S. Varma, W. H. Weinburg, S. P. DenBaars |
|
Surface Science, V326, N3: 209-217 |
|
Journal |
53 |
|
1995 |
|
"Indium Phosphide (INP) Based Heterostructure Materials and Devices Grown by MOCVD Using Tertiarybutylarsine (TBA) Tertiarybutylphosphine (TBP)", S. P. DenBaars, A. L. Holmes, M. E. Heimbuch, V. J. Jayaraman |
|
Journal of the Korean Physical Society, V28, S: S37-S42. |
|
Journal |
54 |
|
1995 |
|
"Low-Temperature PD Bonding of III-V Semiconductors", I. H. Tan, C. Reaves, A. L. Holmes, E. L. Hu, S. P. DenBaars |
|
Electronics Letters, V31, N7: 588-589 |
|
Journal |
55 |
|
1995 |
|
"Effect of Atmospheric Pressure MOCVD Growth Conditions on UV Band-Edge Photoluminescence in GAn Thin Films", B. P. Keller, S. Keller, D. Kapolnek, M. Kato, S. P. DenBaars |
|
Electronic Letters, V31, N13: 1102-1103 |
|
Journal |
56 |
|
1995 |
|
"On the Interface Resistance of Regrwon GaInAs on InP", K. Hiziloglu, M.M. Hashemi, S.P. DenBaars, and U.K. Mishra |
|
Solid State Electronics, V38, N4: 905-908 |
|
Journal |
57 |
|
1995 |
|
"Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire", D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck |
|
Applied Physics Letters, v67, N11: 1541-1543 |
|
Journal |
58 |
|
1995 |
|
"InP as Self Assembled Quantum Structures", C.M. Reaves, N.A. Cevallos, G.C. Hsueh, Y.M. Cheng, W.H. Weinberg, P.M. Petroff, and S.P. DenBaars |
|
Proceeding of the Seventh International Conference on Indium Phosphide and Related Materials. |
|
Conference Proceedings |
59 |
|
1995 |
|
"Nanoscale characterization of InP islands on InGaP(001)", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg |
|
OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), vol. 5, 36-38 |
|
Journal |
60 |
|
1993 |
|
“Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room –Temperature Ion-Gun “, Y.L. Chang, I.H. Tan. C.M. Reaves, J. Merz, E. Hu, and S.P. DenBaars |
|
Phys. Rev. Letters. |
|
Journal |
61 |
|
1994 |
|
“GaInAs/GaInP Double Barrier Structure: Growth and Application to Tunneling Devices”, C.M. Reaves, J. Yen, M.S. Leonard, A.L. Holmes, U.K. Mishra, S.P. DenBaars |
|
Materials Res. Soc., 1994, 147-152 |
|
Conference Proceedings |
62 |
|
1995 |
|
"MOCVD Growth of High Optical Quality and High Mobility GaN", B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars |
|
Journal Electronic Materials, Nov. 1995 V24 N11:1707-1709. |
|
Journal |
63 |
|
1996 |
|
"The Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films", B. Heying, X. H. Wu, S. Keller, Y. Li, D Kapolnek, B. Keller, S. P. DenBaars, J. S. Speck |
|
Applied Physics Letters, 29 Jan. 1996, V68 N5:643-645 |
|
Journal |
|
|
|
|
|
|
|
|
|
64 |
|
1995 |
|
"Growth and Characterization of InGaN/GaN Double Heterostructure LEDs Grown by MOCVD", S. Keller, B. P. Keller, Y.-F. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. K. Mishra, S. P. DenBaars |
|
Special Issue on Proceedings of Topical Workshop on III-V Nitrides Pergamon. |
|
Conference Proceedings |
65 |
|
1995 |
|
"Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100)", C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars |
|
Journal of Electronic Materials, Nov. 1995, V24, N11:1605-1609 |
|
Journal |
66 |
|
1995 |
|
"Characterization of InP Islands on InGaP/GaAs(001): Effect of Deposition Temperature", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg |
|
Surface Science, Nov 1, 1995, V341 N1-2: 29-39 |
|
Journal |
67 |
|
1996 |
|
"Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Metal-Organic Chemical Vapor Deposition", S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, X. H. Wu, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars |
|
Applied Physics Letters, 11 Mar. 1996, V68 N11: 1525-1527 |
|
Journal |
68 |
|
1996 |
|
"Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire", S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars. |
|
Japanese J. Appl. Physics, 1 March 1996, V35, N3A: L285-8. |
|
Journal |
69 |
|
1996 |
|
"Nucleation Layer Evolution in Metal-Organic Chemical Vapor Deposition Grown GaN", X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck. |
|
Applied Physics Letters, 4 March1996, V68 N10: 1371-1373. |
|
Journal |
70 |
|
1995 |
|
“High Performance AlAs/Ga/sub x/In/sub 1-x/As Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition,” J.C. Yen, B.P. Keller, S.P. DenBaars, U.K. Mishra. |
|
Journal of Electronic Materials, Oct. 1995. V24, N10:1387-1390. |
|
Journal |
71 |
|
1995 |
|
“Analysis of InP Etched Surfaces Using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures,” Yu, DG; Keller, B.P.; Holmes, A.L., Jr.; Hu, E.L.; and others. |
|
Journal of Vacuum Science & Technology B, Nov-Dec. 1995, V13, N6:2381-2385. |
|
Journal |
72 |
|
1995 |
|
“Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with tertiarybutylphosphine (TBP). Itaya, K.; Holmes, A.L., Jr.; Keller, S.; Hummel, S.G.; Coldren, L.A. and DenBaars, S.P. |
|
Japanese Journal of Applied Physics, Part 2 (Letters), 15 Nov. 1995, V34, N11B: L1540-1542.
|
|
Journal |
73 |
|
1995 |
|
“From research to manufacture-the evolution of MOCVD,” Grodzinski, P.; DenBaars, S.P.; Lee, H.C. |
|
JOM, Dec. 1995, V47, N12: pp. 25-32. |
|
Journal |
74 |
|
1996 |
|
“Field emission from selectively regrown GaN pyramids,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P. |
|
IEEE, 1996, pp.152-153. |
|
Conference Proceedings |
75 |
|
1996 |
|
“GaN HFETs and MODFETs with very high breakdown voltage and large transconductance,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; Mishra, U.K. and DenBaars, S.P. |
|
IEEE, 1996, pp. 60-61. |
|
Conference Proceedings |
76 |
|
1996 |
|
“Ion damage propagation in dry-etched InP-based structures,” Hu, E.L.; Yu, D.G.; Chen, C.-H.; Keller, B.; and DenBaars, S.P. |
|
IEEE, 1996, pages 107-110. |
|
Conference Proceedings |
77 |
|
1996 |
|
“InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P. |
|
IEEE, 1996, pp. 157-158 Volume 2. |
|
Conference Proceedings |
78 |
|
1996 |
|
“Cleaved facets in GaN by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E.; Speck, J.S. and DenBaars, S.P. |
|
Materials Res. Soc, 1996, pp. 165-170. |
|
Conference Proceedings |
79 |
|
1996 |
|
“Long-wavelength vertical-cavity surface-emitting laser diodes,” Babic, D.I.; Jayaraman, V.; Margalit, N.M.; Streubel, K.; and DenBaars, S.P. |
|
Materials Research. Society, 1996, pp. 63-74. |
|
Conference Proceedings |
80 |
|
1996 |
|
“Absolute internal quantum efficiency of an InGaN/GaN quantum well,” Reese, C.; Yablonovitch, E.; Keller, S.; Keller, B.; Mishra, U.K. and DenBaars, S.P. |
|
Opt. Soc. America, 1996, p. 472. |
|
|
81 |
|
1996 |
|
“InP-based devices and their applications for merged FET-HBT technologies,” Parikh, P.; Kiziloglu, K.; Mondry, M.; Chavarkar, P.; Mishra, U. and DenBaars, S. |
|
Microwave and Optical Technology Letters, 20 Feb. 1996, V11, N3: pp. 121-125. |
|
Journal |
82 |
|
1996 |
|
“Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP.” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P. |
|
Electronics Letters, 14 March 1996, V32, N6: pp. 593-594. |
|
Journal |
83 |
|
1996 |
|
“Low interface trap density for remote plasma deposited SiO/sub 2/ on n-type GaN,” Casey, H.C., Jr.; Fountain, G.G.; Alley, R.G.; Keller, B.P.; and DenBaars, S. |
|
Applied Physics Letters, 25 March 1996, V68, N13: pp. 1850-1852. |
|
Journal |
84 (a) |
|
1996 |
|
“Cleaved GaN facets by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E. and DenBaars, S.P. |
|
Applied Physics Letters, 8 April 1996, V68, N15: pp. 2147-2149. |
|
Journal |
84 (b) |
|
1996 |
|
“Growth and Characterization of bulk InGaN films and quantum wells” S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. DenBaars |
|
Applied Physics Letters, 27 May 1996, V68, N22: pp. 3147-3149 |
|
Journal |
85 |
|
1996 |
|
“InP-based multiple quantum well structures grown with tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP): effects of growth interruptions on structural and optical properties. Holmes, A.L., Jr.; Heimbuch, M.E.; Fish, G.; Coldren, L.A.; and DenBaars, S.P. |
|
Journal of Electronic Materials, June 1996, V25, N6: pp. 965-971. |
|
Journal |
86 |
|
1996 |
|
“A new FET-based integrated circuit technology: the SASSFET,” Parikh, P.A.; Jiang, W.N.; Chavarkar, P.M.; Kiziloglu, K.; Mishra,, U.K. and DenBaars, S.P. |
|
IEEE Electron Device Letters, July 1996, V17, N7: pp. 375-357. |
|
Journal |
87 |
|
1996 |
|
“Photocurrent decay in n-type GaN thin films,” Qiu, C.H.; Melton, W.; Leksono, M.W.; Pankove, J.I.; Keller, B.P. and DenBaars, S.P. |
|
Applied Physics Letters, 26 August 1996, V69, N9: pp. 1282-1284. |
|
Journal |
88 |
|
1996 |
|
“InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range,” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P. |
|
Electronics Letters, 29 Aug. 1996, V32, N18: pp. 1697-1699. |
|
Journal |
89 |
|
1996 |
|
“Control of III-V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness,” Gaffney, M.; Reaves, C.M.; Smith, R.S.; Holmes, A.L., Jr.; and DenBaars, S.P. |
|
Journal of Crystal Growth, Sept. 1996, V167, N1-2: pp. 8-16. |
|
Journal |
90 |
|
1996 |
|
“Measured microwave power performance of AlGaN/GaN MODFET,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P. |
|
IEEE Electron Device Letters, Sept. 1996, V17, N9: pp. 455-457. |
|
Journal |
91 |
|
1996 |
|
“Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P. |
|
Applied Physics Letters, 2 Sept. 1996, V69, N10: pp. 1438-1440. |
|
Journal |
92 |
|
1996 |
|
“Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/,” Wu, X.H.; Brown, L.M.; Kapolnek, D.; Keller, S.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P. |
|
Journal of Applied Physics, 15 Sept. 1996, V80, N6: pp. 3228-3237. |
|
Journal |
93 |
|
1996 |
|
“Radiative recombination lifetime measurements of InGaN single quantum well,” Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M.; Bowers, J.E. & DenBaars, S.P. |
|
Applied Physics Letters, 23 Sept. 1996, V69, N13: pp. 1936-1938. |
|
Journal |
94 |
|
1996 |
|
“Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100),” Hsueh, G.C.; Reaves, C.M.; DenBaars, S.P.; Weinberg, W.H. |
|
Surface Science, 10 Oct. 1996, V366, N1: pp. 129-139. |
|
Journal |
95 |
|
1996 |
|
“High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts,” Shealy, J.B.; Matloubian, M.; Liu, T.Y.; Thompson, M.A.; Mishra, U.K. and DenBaars, S.P. |
|
IEEE Electron Device Letters, Nov. 1996, V17, N11: pp. 540-542. |
|
Journal |
96 |
|
1996 |
|
“Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy,” O'Shea, J.J.; Reaves, C.M.; DenBaars, S.P.; Chin, M.A.; and Narayanamurti, V. |
|
Applied Physics Letters, 11 Nov. 1996, V69, N20: pp. 3022-3024. |
|
Journal |
97 |
|
1996 |
|
“45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P. |
|
Applied Physics Letters, 18 Nov. 1996, V69, N21: pp. 3131-3133. |
|
Journal |
98 |
|
1996 |
|
“Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition,” Wu, X.H.; Fini, P.; Keller, S.; Tarsa, E.J.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P. |
|
Japanese Journal of Applied Physics, Part 2 (Letters), 15 Dec. 1996, V35, N12B: L1648-1651 |
|
Journal |
99 |
|
1996 |
|
“Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface,” Reaves, C.M.; Pelzel, R.I.; Hsueh, G.C.; Weinberg, W.H.; and DenBaars, S.P. |
|
Applied Physics Letters, 16 Dec. 1996, V69, N25: pp. 3878-3880. |
|
Journal |
100 |
|
1996 |
|
“Real-time composition and thickness control techniques in a metalorganic chemical vapor deposition process,” Gaffney, M.S.; Reaves, C.M.; Holmes, A.L., Jr.; Smith, R.S.; and DenBaars, S.P. |
|
Materials Res. Soc, 1996. pp. 133-138. |
|
Conference Proceedings |
101 |
|
1997 |
|
“Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition,” Keller, S.; Keller, B.; Kapolnek, D.; Mishra, U.; & DenBaars, S. |
|
Journal of Crystal Growth, Jan. 1997, V170, N1-4: pp. 349-352. |
|
Journal |
102 |
|
1997 |
|
“Selective area epitaxy of GaN for electron field emission devices,” Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; and Mishra, U.K. and DenBaars, S.P. |
|
Journal of Crystal Growth, Jan. 1997, V170, N.1-4: pp. 340-343. |
|
Journal |
103 |
|
1997 |
|
“Ballistic electron emission microscopy study of transport in GaN thin films,” Brazel, E.G.; Chin, M.A.; Narayanamurti, V.; Kapolnek, D.; and Mishra, U.K. and DenBaars, S.P. |
|
Applied Physics Letters, 20 Jan. 1997, V70, N3: pages 330-332. |
|
Journal |
104 |
|
1997 |
|
“Selective-area regrowth of GaN field emission tips,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P. |
|
Solid-State Electronics, Feb. 1997, V41, N2: pp. 243-245. |
|
Journal |
105 |
|
1997 |
|
“Low resistance ohmic contact to n-GaN with a separate layer method,” Wu, Y.-F.; Jiang, W.-N.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P. |
|
Solid-State Electronics, Feb. 1997, V41, N2: pp. 165-168. |
|
Journal |
106 |
|
1997 |
|
“Comparing ion damage in GaAs and InP,” Yu, D.G.; Chen, C.-H.; Holmes, A.L., Jr.; Hu, E.L.; and DenBaars, S.P. |
|
Microelectronic Engineering, Feb. 1997, V35, N1-4: pp. 95-98. |
|
Journal |
107 |
|
1997 |
|
“GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage,” Nguyen, N.X.; Keller, B.P.; Keller, S.; Wu, Y.-F.; Mishra, U.K. and DenBaars, S.P. |
|
Electronics Letters, 13 Feb. 1997, V33, N4: pp. 334-335. |
|
Journal |
108 |
|
1997 |
|
“Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration,” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Krishnankutty, S.; Keller, S.; Abare, A.; Coldren, L.; Mishra, U. & DenBaars, S. |
|
Journal of Applied Physics, 15 Feb. 1997, V81, N4: pp. 2021-2023. |
|
Journal |
109 |
|
1997 |
|
“Accurate mobility and carrier concentration analysis for GaN,” Look, D.C.; Sizelove, J.R.; Keller, S.; Wu, Y.F.; Mack, M.; Mishra, U.K. & DenBaars, S.P. |
|
Solid State Communications, April 1997, V102, N4: pp. 297-300. |
|
Journal |
110 |
|
1997 |
|
“Femtosecond studies of carrier dynamics in InGaN,” Sun, C.-K.; Vallee, F.; Keller, S.; Bowers, J.E.; and DenBaars, S.P. |
|
Applied Physics Letters, 14 April 1997, V70, N15: pp. 2004-2006. |
|
Journal |
111 |
|
1997 |
|
“Gain spectroscopy on InGaN/GaN quantum well diodes,” Kuball, M.; Jeon, E.S.; Song, Y.-K.; Nurmikko, A.V.; Keller, S.; Kozodoy, P.; Steigeruald, D,; Mishra, U.K. and DenBaars, S.P. |
|
Applied Physics Letters, 12 May 1997, V70, N19: pp. 2580-2582. |
|
Journal |
112 |
|
1997 |
|
”Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V,” Wu, Y.-F.; Keller, S.; Kozodoy, P.; Keller, B.P.; Keller, and DenBaars, S.P. |
|
IEEE Electron Device Letters, June 1997, V18, N6: pp. 290-292. |
|
Conference Proceedings |
113 |
|
1997 |
|
“Demonstration of InP-InGaAsP vertical grating-assisted codirectional coupler filters and receivers with tapered coupling coefficient distributions,” Yu-Heng Jan; Fish, G.A.; Coldren, L.A.; DenBaars, S.P. |
|
IEEE Photonics Technology Letters, July 1997, V9, N7: pp. 994-996. |
|
Journal |
114 |
|
1997 |
|
“Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications,” San-Liang Lee; Heimbuch, M.E.; Cohen, D.A.; Coldren, L.A.; and DenBaars, S.P. |
|
IEEE Journal of Selected Topics in Quantum Electronics, April 1997, V3, N2: pp. 615-27. |
|
Journal |
115 |
|
1997 |
|
“Substrate engineering of 1.55 mu m lasers,” Abraham, P.; Black, A.K.; Margalit, N.M.; Hawkins, A.R.; and DenBaars, S.P. |
|
IEEE, 1997. pp. 455-458. |
|
Conference Proceedings |
116 |
|
1997 |
|
“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature,” Sun, C.-K.; Chiu, T.-L.; Keller, S.; Wang, G.; Minsky, M.; Bowrs, J.E.and DenBaars, S.P. |
|
Applied Physics Letters, 28 July 1997, V71, N4: pp. 425-427. |
|
Journal |
117 |
|
1997 |
|
“Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 Ghz,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Nguyen, N.X.; Mishra, U.K. and DenBaars, S.P. |
|
IEEE Electron Device Letters, Sept. 1997, V18, N9: pp. 438-440. |
|
Journal |
118 |
|
1997 |
|
"MOCVD of Group III-Nitrides," S. DenBaars and S. Keller, Chapter 2, Gallium Nitride Materials and Devices, J. Pankove and T. Moustakas, |
|
Academic Press, 1197, V50, pp. 11-37. |
|
Journal |
119 |
|
1997 |
|
"Reconfigurable Optical Properties in InGaN/GaN quantum wells,” I. Shmagi, J. Muth, R. Kolbas, M.P. Mack, A.C. Abare, S. Keller, L. A. Coldren, U.K. Mishra, and S. DenBaars. |
|
Appl. Physics Lett. V71 N1: pp. 1455. |
|
Journal |
120 |
|
1997 |
|
"Characteristics of InGaN MQW Blue Laser Diodes Grown by MOCVD," M.P. Mack, A. C. Abare, M. Aizorcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L.A. Coldren, and S.P. DenBaars. |
|
MRS Internet Journal of Nitride Research, 1997, Volume 2, Article 41. |
|
Journal |
121 |
|
1997 |
|
"Electron Beam Pumped MQW InGaN/GaN Laser," V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, S, DenBaars, M.D. Tiberi , T. George. |
|
MRS Internet Journal of Nitride Research, Volume 2, Article Number 38. |
|
Journal |
122 |
|
1997 |
|
"Gallium-Nitride-Based Materials for Blue to Ultraviolet Optoelectronics Devices," S. DenBaars. |
|
IEEE Special Issue on Optoelectronics, 1997. |
|
Conference Proceedings |
123. |
|
1997 |
|
"MOCVD Growth and Properties of InGaN/Gan MQW," S. Keller, A. Abare, M. S. Minsky, D. H. Wu, M. P. Mack, J. S. Speck, E. Hu, L.A. Coldren, U.K. Mishra, and S. DenBaars. |
|
Proceeding of the International Conference on SiC and Group III - Nitrides, 1997 |
|
Conference Proceedings |
124. |
|
1997 |
|
“Role of defect diffusion in the InP damage profile” D.G. Yu, C.H. Chen, A.L. Holmes Jr., S.P. DenBaars, E.L. Hu. |
|
J. Vac. Sci. Technol. B V15, N6 |
|
Journal |
125. |
|
1997 |
|
“Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics” S.P. DenBaars |
|
Intl. J. of High Speen Electronics and Systems, V8, N2: pp. 265-282 |
|
Journal |
126. |
|
1997 |
|
“Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy” E.J. Tarsa, B. Heying, X.H. Wu, P. Fini, S.P. DenBaars, J.S. Speck. |
|
J. Appl. Phys. , V82, N11: pp. 5472-5479 |
|
Journal |
127. |
|
1997 |
|
“InP islands on InGaP/GaAs (001): island separation distributions” S. Varma, C.M. Reaves, V. Bressler-Hill, S.P. DenBaars, W.H. Weinberg |
|
Science Surface, V393, N1-3: pp. 24-33 |
|
Journal |
128. |
|
1997 |
|
“Well-width dependent dtudies of InGaN-GaN single –quantum wells using time-resolved photoluminescence techniques” Chi-Kuang Sun, S. Keller, Tien-Lung Chiu, G. Wang, M.S. Minsky, J.E. Bowers, S.P. DenBaars |
|
IEEE Journal of Selected Topics in Quantum Electronics, V3, N3: pp. 731-738 |
|
Journal
|
129. |
|
1997 |
|
“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature” C.-K. Sun, T.-L. Chiu, S. Keller, G. Wang, M.S. Minsky, S.P. DenBaars, J.E. Bowers |
|
Applied Physics Letters, V71, N4: pp. 425-427 |
|
Journal |
130. |
|
1997 |
|
“Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures” Z. Dziuba, J. antoszewski, J.M. Dell, L. Faraone, P. Kozodoy, S. Keller, B. Keller, S.P. DenBaars, U.K. Mishra |
|
J. Appl. Phys. , V82, N6: pp. 2996-3002 |
|
Journal |
131. |
|
1997 |
|
“Short-channel Al/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz.” Y.-F. Wu, B.P. Keller, P. Fini, J. Pusl, M. Le, N.X. Nguyen, C. Nguyen, D. Widman, S. Keller, S.P. DenBaars, U.K. Mishra |
|
Electronics Letters, V33, N20: pp. 1742-1743 |
|
Journal |
132. |
|
1997 |
|
“Compact InGaAsP/InP 1x2 optical switch based on carrier induced supression of modal interference” G.A. Fish, L.A. Coldren, S.P. DenBaars |
|
Electronics Letters, V33, N22: pp. 1898-1900 |
|
Journal |
133. |
|
1997 |
|
“Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements” J.F. Muth, A.J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P. Keller, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters, V71, N18: pp. 2572-2574 |
|
Journal |
134. |
|
1997 |
|
“In/sub x/Ga/sub 1-x/N/Al/sub y/Ga/sub 1-y/N violet light emitting dioded with reflective p-contacts for high single sided light extraction” P.M. Menz, P. Kellawon, R. Van Roijen, P. Kozodoy, S. DenBaars |
|
Electronics Letters, V33, N24: pp. 2066-2068 |
|
Journal |
135. |
|
1998 |
|
“High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells” S. Bidnyk, T.J. Schmidt, Y.H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters V72, N13: pp. 1623-1625 |
|
Journal |
136. |
|
1998 |
|
“Spiral Growth of InGaN Nanoscale Islands on GaN” S. Keller, U.K. Mishra, S.P. DenBaars, W. Seifert. |
|
Japanese J. Appl. Phys. V37 Part 2, No. 4B: pp. 431-434 |
|
Journal |
137. |
|
1998 |
|
“Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition” P.J. Hansen, Y.E. Strausser, A.N. Erickson, E.J. Tarsa, P. Kozodoy, E.G. Brazel, J.P. Ibbetson, U. Mishra, V. Narayanamurti, S.P. DenBaars, J.S. Speck |
|
Applied Physics Letters V72, N 18: pp. 2247-2249 |
|
Journal |
138. |
|
1998 |
|
“Growth and properties of InGaN nanoscale islands on GaN” S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U. K. Mishra, S.P. DenBaars, W. Seifert |
|
Journal of Crystal Growth V189, N190: pp. 29-32 |
|
Journal |
139. |
|
1998 |
|
“Dislocation generation in GaN heteroepitaxy” X.H. Wu, P. Fini, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck |
|
Journal of Crystal Growth V189, N190: pp. 231-243 |
|
Journal |
140. |
|
1998 |
|
“MOVPE growth and characterization of Mg-doped GaN” P.Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra |
|
Journal of Crystal Growth V195: pp. 265-269 |
|
Journal |
141. |
|
1998 |
|
“Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition” H. Marchand, J.P. Ibbetson, P.T. Fini, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra |
|
Journal of Crystal Growth V195: pp. 328-332 |
|
Journal |
142. |
|
1998 |
|
“Cleaved and Etched Facet Nitride Laser Diodes” A.C. Abare, M.P. Mack, M. Hansen, R.K. Sink, P. Kozodoy, S. Keller, J.S. Speck, J.E. Bowers, U.K. Mishra, L.A. Coldren, S.P. DenBaars |
|
IEEE Journal of Selected Topics in Quantum Electronics V4, N3: pp. 505-509 |
|
Journal |
143. |
|
1998 |
|
“Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays” R.D. Underwood, P. Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra |
|
Applied Physics Letters V73, N3: pp. 405-407 |
|
Journal |
144. |
|
1998 |
|
“Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes” S. Chichibu, D.A. Cohen, M.P. Mack, A.C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J.E. Bowers, U.K. Mishra, L.A. Coldren, D.R. Clarke, S.P. DenBaars |
|
Applied Physics Letters V73, N4: pp. 496-498 |
|
Journal |
145. |
|
1998 |
|
“Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells” T.J. Schmidt, Y-H Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters V73, N5: pp. 560-562 |
|
Journal
|
146. |
|
1998 |
|
“Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, M.S. Minsky, E. Hu, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters V73, N8: pp. 1128-1130 |
|
Journal |
147. |
|
1998 |
|
“The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor depostion” P. Fini, X. Wu, E.J. Tarsa, Y. Golan, V. Srikant, S. Keller, S.P. DenBaars, J.S. Speck |
|
Japanese J. Appl. Phys. V37, N8: pp. 4460-4466 |
|
Journal |
148. |
|
1998 |
|
“Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition” H. Marchand, X.H. Wu, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra |
|
Applied Physics Letters V73, N6: pp. 747-749 |
|
Journal |
149. |
|
1998 |
|
“Electrical characterization of GaN p-n junctions with and without threading dislocations” P. Kozodoy, J.P. Ibbetson, H. Marchand, P.T. Fini, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra |
|
Applied Physics Letters V73, N7: pp. 975-977 |
|
Journal |
150. |
|
1998 |
|
“Ridge Waveguide Sampled Grating DBR Lasers with 22-nm Quasi-Continuous Tuning Range” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren |
|
IEEE Photonics Technology Letters V10, N9: pp. 1211-1213 |
|
Journal |
151. |
|
1998 |
|
“ ‘S-shaped’temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells” Y-H Cho, G.H. Gainer, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters V73, N10: pp. 1370-1372 |
|
Journal |
152. |
|
1998 |
|
“Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures” S.F. Chichibu, A.C. Abare, M.S. Minsky, S. Keller, S.B. Fleischer, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars |
|
Applied Physics Letters V73, N14: pp. 2006-2008 |
|
Journal |
153. |
|
1998 |
|
“High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts” C-H Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E.L. Hu, S.P. DenBaars, U.K. Mishra, Y. Wu |
|
Applied Physics Letters V73, N21: pp. 3147-3149 |
|
Journal |
154. |
|
1998 |
|
“Excitation energy-dependent optical characteristics of InGaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters V73, N22: pp. 3181-3183 |
|
Journal |
155. |
|
1998 |
|
“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper |
|
Applied Physics Letters V73, N26: pp.3887-3889 |
|
Journal |
156. |
|
1998 |
|
“Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile” G.A. Fish, B. Mason, S.P. DenBaars, L.A. Coldren |
|
J. Crystal Growth, V186, N1-2: pp. 1-7 |
|
Journal |
157. |
|
1998 |
|
“Optical properies of GaAs confined in the pores of MCM-41” V. I. Srdanov, I. Alxneit, G.D. Stucky, C.M. Reaves, S.P. DenBaars |
|
J. Physical Chemistry, V102, N18: pp. 3341-3344 |
|
Journal |
158. |
|
1998 |
|
“Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells” X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, J.S. Speck |
|
Applied Physics Letters, V72, N6: pp. 692-694 |
|
Journal |
159. |
|
1998 |
|
“High Al-content AlGaN/GaN MODFET’s for ultrahigh performance” Y.-F Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, L.T. Kehias, S.P. DenBaars, U.K. Mishra |
|
IEEE Electron Device Letters, V19, N2: pp. 50-53 |
|
Journal |
160. |
|
1998 |
|
“Suppressed modal interference switches with integrated curved amplifiers for scaleable photonic crossconnects” G.A. Fish, L.A. Coldren, S.P. DenBaars |
|
IEEE Photonics Technology Letters, V10, N2: pp. 230-232 |
|
Journal |
161. |
|
1998 |
|
“Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence” M.S. Minsky, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S.P. DenBaars |
|
Applied Physics Letters, V72, N9: pp. 1066-1068 |
|
Journal |
162. |
|
1998 |
|
“Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD” H. Marchand, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra |
|
MRS Internet Journal of Nitride Semiconductor Research, V3 |
|
Journal |
163. |
|
1998 |
|
“Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering” A. Munkholm, C. Thompson, C.M. Foster, J.A. Eastman, O. Auciello, G.B.Stephanson, P. Fini, S.P. DenBaars, J.S. Speck |
|
Applied Physics Letters, V72, N23: pp. 2972-2974 |
|
Journal |
164. |
|
1998 |
|
“Catastrophic optical damage in GaInN multiple quantum wells” D.A. Cohen, T. Magalith, A.C. Abare, M.P. Mack, L.A. Coldren, S.P. DenBaars, D.R. Clarke |
|
Applied Physics Letters, V72, N25: pp. 3267-3269 |
|
Journal |
165. |
|
1998 |
|
“Improvement of GaN-based laser diode facets by FIB polishing” M.P. Mack, G.D. Via, A.C. Abare, M. Hansen, P. Kozodoy, S. Keller, J.S. Speck, U.K. Mishra, L.A. Coldren, S.P. DenBaars |
|
Electronics Letters, V34, N13: pp. 1315-1316 |
|
Journal |
166. |
|
1998 |
|
“Tunable sample-grating DBR lasers with integrated wavelength monitors” B. Mason, S.P. DenBaars, L.A. Coldren |
|
IEEE Photonics Technology Letters, V10, N8: pp. 1085-1087 |
|
Journal |
167 |
|
1998 |
|
“Compact, 4x4 InGaAsP-InP optical crossconnect with a scaleable architecture” G.A. Fish, B. Mason, L.A. Coldren, S.P. DenBaars |
|
IEEE Photonics Technology Letters, V10, N9: pages 1256-1258 |
|
Journal |
168. |
|
1998 |
|
“Pump-probe spectoscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN” T.J. Schmidt, Y.-H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters, V73, N13: pp. 1892-1894 |
|
Journal |
169. |
|
1998 |
|
“Substrate reactivity and ‘controlled contamination’in metalorganic chemical vapor deposition of GaN on sapphire” Y. Golan, P. Fini, S.P. DenBaars, J.S. Speck |
|
Japanese Journal of Applied Physics, V37, Pt.1, N9A: pp. 57-65 |
|
Journal |
170. |
|
1998 |
|
“A first look at AlGaN/GaN HBTs” L. McCarthy, P. Kozodoy, M. Rodwell, S.P. DenBaars, U.K. Mishra |
|
Compound Semiconductor Magazine, V4, N8 |
|
Magazine |
171. |
|
1998 |
|
“Optical properties of InGaN/GaN quantum wells with Si-doped barriers” M. Minsky, S. Chichibu, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Japanese Journal of Applied Physics, V37, Pt. 2 ,N11B: pp. 1362-1364 |
|
Journal |
172. |
|
1998 |
|
“Stimulated emission characteristics of InGaN/GaN multiple quantum wells:Excitation length and excitation density” |
|
Applied Physics Letters, V73, N25: pp. 3689-3691 |
|
Journal |
173. |
|
1998 |
|
“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper |
|
Applied Physics Letters, V73, N26: pp. 3887-3889 |
|
Journal |
174. |
|
1998 |
|
“Gallium nitride based materials and their application for light emitting devices” S. Keller, S.P. DenBaars |
|
Current Opinion in Solid State & Materials Science, V3, N1: pp. 45-50 |
|
Journal |
174a. |
|
1998 |
|
Chapter 2 pp.11-35 “Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides”S. P. DenBaars, S. Keller
|
|
J. I. Pankove, T.D. Moustakas Semiconductors and Semimetals, V50: Gallium Nitride (GaN) I Academic Press: San Diego |
|
Book Chapter |
175. |
|
1999 |
|
“Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN” G.B. Stephenson, J.A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P.H. Fuoss, P. Fini, S.P. DenBaars, J.S. Speck |
|
MRS Bulletin/Jan.: pp. 21-25 |
|
Journal |
176. |
|
1999 |
|
“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleischer, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters V74, N10: pp. 1460-1462 |
|
Journal |
177. |
|
1999 |
|
“Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride” S.J. Rosner, G. Girolami, H. Marchand, P.T. Fini, J.P. Ibbetson, L. Zhao, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck |
|
Applied Physics Letters V74, N14: pp. 2035-2037 |
|
Journal |
178. |
|
1999 |
|
“Dislocation mediated surface morphology of GaN” B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, J.S. Speck |
|
Journal of Applied Physics V85, N9: pp. 6470-6476 |
|
Journal |
179. |
|
1999 |
|
“Widely Tunable Sampled Grating DBR Laser with Integrated Electroabsorption Modulator” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren |
|
IEEE Photonics Technology Letters V11, N6: pp. 638-640 |
|
Journal
|
180. |
|
1999 |
|
“Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells’ S.Fleisher, S. Keller, A. Abare, L. Coldren, U. Mishra, S. DenBaars, J. Bowers |
|
Ultrafast Electonics and Optoelectronics: Snow Mass, CO April 12-16
|
|
Conference Proceedings |
181. |
|
1999 |
|
“Near-field scanning optical microscopy of indium gallium nitride multple-quantum-well laser diodes” D. Young, M. Mack, A. Abare, M. Hansen, L. Coldren, S. DenBaars, E. Hu , D. Awschalom |
|
Applied Physics Letters; V74, N16 |
|
Journal |
182. |
|
1999 |
|
“Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings” A. Abare, M. hanson, J. Speck, L. coldren, s. DenBaars |
|
Device Research Conferecne, paper no. VII.B-6; Santa Barbara, CA |
|
Conferece Proceedings |
183. |
|
1999 |
|
“Indium tin oxide contacts to gallium nitride optoelectronic devices” T. Margalith, O. Buchinsky, D. Cohen, A. Abare, M. Hansen, S. DenBaars, L. Coldren |
|
Applied Phyics Letters; V7, N26 |
|
Journal |
184. |
|
1999 |
|
“Improved characterstics of InGaN multi-quantum well laser diodes grown on laterally overgrown GaN on sapphire” M, Hanson, P. Fini, L. Zhao, A. Abare, J. Speck, L. coldren, S. DenBaars |
|
Elecronic Materials Conf.; Santa Barbara, CA – post deadline paper Session R, Electronic Materials Conf., June 30 – July 2, 1999 |
|
Conference Proceeding |
185. |
|
1999 |
|
High-performance (Al,Ga)N-based solar-blind ultraviolet p-I-n detectors on laterally epitaxially overgrown GaN, G. Parish, S. Keller, P. Kozodoy, J.P. Ibbitson, H. Marchand, P.T. Fini, S.B. Fleischer, E.J. Tarsa , S.P. DenBaars, and U.K. Mishra. |
|
Applied Phyics Letters; V75, N2: pp. 247-249. |
|
Journal |
186. |
|
1999 |
|
High-quality coalescense of laterally overgrown GaN stripes on GaN/sapphire seed layers, P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U. K. Mishra and J.S. Speck. |
|
Applied Phyics Letters; V75, N12: pp. 1706-1708. |
|
Journal |
187. |
|
1999 |
|
Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings” A.C. Abare, M. Hansen, J. S. Speck, S. P. DenBaars and L. A. Coldren. |
|
Electronics Letters, Sept. 2, 1999, V35, N18: pp. 205-206. |
|
Journal |
188. |
|
1999 |
|
“Effect of AlGaN/GaN strained layer superlattice period of InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars |
|
Phys. Stat. Sol., V176: pp. 59-62 |
|
Journal |
189. |
|
1999 |
|
“Optical Spectroscopy of InGaN/GaN quantum wells” E. Berkowiz, D. Gershoni, G. Bahir, a. Abare, S DenBaars, L. Coldren |
|
Phys. Stat. Sol. 216,291 |
|
Journal
|
190. |
|
1999 |
|
“Embedded delelctric grating distributed feedback nitride laser diode” A. Abare, M. Hansen, J. speck, L. coldren, S. DenBaars |
|
International conference on nitride Semiconductros, Paper no. WePO61: Montpeliier, France |
|
Conference Proceeding |
191. |
|
1999 |
|
“Photoresponse and physical properties of photoconductor and photovoltaic GaN based UV detectors” V. Garber, G. Bahit, J. Salzman, A. Abare, S. DenBaars, L. coldren |
|
International conference on Niride Semiconductoes: montpellier, France- paper no. WePO35 |
|
Conference Proceeding |
192. |
|
1999 |
|
“Monolithic integration of a widely tunable laser and an electro-absorptoin modulator” B. Mason, G. Fish, S. DenBaars, L. Coldren |
|
Integrated Photonic Research 99’; Santa Barbara, CA-paper no. RME2 |
|
Conference Proceeding |
193. |
|
1999 |
|
“Compact, 1.55 µm spot-size converters for InP based photonic integrated circuits” G. Fish, B. mason, L. coldren, s. DenBaars |
|
Integrated Photonics Research Conference ’99; santa Barbara, CA-paper no. RWD4 |
|
Conference Proceedings |
194. |
|
1999 |
|
“Monolithic InP Optical Crossconnects: 4x4 and beyond” G. Fish, B. Mason, L. coldren, S. DenBaars |
|
Photonics in Switching; Santa Barbara, CA-paper no. JWB2 |
|
Conference Proceedings |
195. |
|
1999 |
|
“Transparent contact to p-GaN: indium tin oxide/titanium nitride” O. Buchinsky, T. Margalith, D. Cohen, A. Abare, S. DenBaars, L. coldren |
|
LEOs Summer Topicals; San Diego, CA-paper no. FBI 3 |
|
Conference Proceedings |
196. |
|
1999 |
|
“Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells” C. Sun, J. lLiang, C. Stanton, A. Abare, L. coldren, S. DenBaars |
|
Applied Physics Letters; V75:N9 |
|
Journal |
197. |
|
1999 |
|
“Optical Crossbar Switches on InP” G. Fish, B. Mason, L. coldren, S. DenBaars |
|
LEOS ’99; San Francisco, CA- paper no. WC1 |
|
Conference Proceeding |
198. |
|
1999 |
|
“Improved Characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao, A. Abare, L. Coldren, J. Speck, S. DenBaars |
|
Materials Research Society Meeting; Boston, MA-paper no. W1 3 |
|
Journal |
199. |
|
1999 |
|
“Optical properties of InGaN quantum wells” S.F. Chichibu, A.C. Abare, M.P. Mack,M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Soto, S. Nakamura |
|
Materials Science and Engineering B59, pp. 298-306 |
|
Journal |
200. |
|
1999 |
|
“High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: influence of Si-Doping concentration” Y.-H. Cho, F. Fedler, R.J. Hauenstein, G.H. Park, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Journal of Applied Physics, V85, N5: pp. 3006-3008 |
|
Journal |
201. |
|
1999 |
|
“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleisher, J.S. Speck, S.P. DenBaars, T. Deguchi, T. Soto, S. Nakamura |
|
Applied Physics Letters, V74, N10: pp. 1460-1462 |
|
Journal |
202. |
|
1999 |
|
“Low-temperature scanning tunneling microscope-induced luminescsence of an InGaN/GaN multiquantum well” S. Evoy, C.K. Harnett, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters, V74, N10: pp. 1457-1459 |
|
Journal |
203. |
|
1999 |
|
“Structural and optical properties of GaN laterally overgrown on Si(111) by metal organic vapor deposition using an AlNbuffer layer” H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, P.T. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra |
|
MRS Internet Journal, V4S1 |
|
Journal |
204. |
|
1999 |
|
“Study of temperature effects on loss mechanisms in 1.55m laser diodes with In/sub 0.81/Ga/sub 0.19/P electron stopper layer” P. Abraham, J. Piprek, S.P. DenBaars, J.E. Bowers |
|
Semiconductor Science and Technology, V14, N5: pp. 419-424 |
|
Journal |
205. |
|
1999 |
|
“Observation of growth modes during metal-organic chemical vapor deposition of GaN” G.B. Stephenson, J.A. Eastman, C. Thompson, O. Auciello, L.J. Thompson, A, Munkholm, P. Fini, S.P. DenBaars, J.S. Speck |
|
Applied Physics Letters, V74, N22: pp. 3326-3328 |
|
Journal |
206. |
|
1999 |
|
“Ultrafast electron dynamics study of GaN” C.-K. Sun, Y.-L. Huang, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Physical Review B, V59, N21: pp. 13535-13538 |
|
Journal |
207. |
|
1999 |
|
“High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S, Speck |
|
Applied Physics Letters, V74 N23: pp. 3528-3530 |
|
Journal |
208. |
|
1999 |
|
“Enhanced Mg doping efficiency in Al/sub 0.2/Ga/sub 0.8/N/GaN superlattices” P. Kozodoy, M. Hansen, S.P. DenBaars, U.K. Mishra |
|
Applied Physics Letters, V74, N24: pp. 3681-3683 |
|
Journal |
209. |
|
1999 |
|
“AlGaN/GaN heterojunction bipolar transistor” L.S. McCarthy, P. Kozodoy, M.J. Rodwell, S.P. DenBaars, U.K. Mishra |
|
IEEE Electron Device Letters, V20, N6: pp. 277-279 |
|
Journal |
210. |
|
1999 |
|
“AlGaN/GaN HBTs using regrown emitter” J.B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson, Y. Smorchkova, S.P. DenBaars, U.K. Mishra |
|
Electronics Letters, V35, N19: pp. 1671-1673 |
|
Journal |
211. |
|
1999 |
|
“Surface structure of GaN(0001) in the chemical vapor deposition environment” A. Munkholm, G.B. Stephenson, J.A. Eastman, C. Thompson, P. Fini, J.S. Speck, O. Auciello., P.H. Fuoss, S.P. DenBaars |
|
Physical Review Letters, V83, N4: pp. 741-744 |
|
Journal |
212. |
|
1999 |
|
“Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies” H. Jiang, M. Minsky, S. Keller, E. Hu, J. Singh, S.P. DenBaars |
|
IEEE Journal of Quantum Electronics, V35, N10: pp. 1483-1490 |
|
Journal |
213. |
|
1999 |
|
“Coupling of InGaN quantum-well photoluminescence to silver surface plasmons” I. Gontijo, M. Boroditsky, E. Yablonovich, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Physical Review B, V60, N16: pp. 11564-11567 |
|
Journal |
214. |
|
1999 |
|
“Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, C.R. Elsass, J.P. Ibbetson, R. Ventury, B. Heying, P. Fini, E. Haus, S.P. DenBaars, J.S. Speck, U.K. Mishra |
|
Journal of Applied Physics, V86, N8: pp. 4520-4526 |
|
Journal |
215. |
|
1999 |
|
“Polarization-enhanced Mg doping of AlGaN/GaN superlattices” P. Kozodoy, Y.P. Smorchkova, M. Hansen., H. Xing, S.P. DenBaars, U.K. Mishra, A.W. Saxler, R. Perrin, W.C. Mitchel |
|
Applied Physics Letters, V75, N16: pp. 2444-2446 |
|
Journal |
216. |
|
1999 |
|
“Structural and optical characteristics of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells with different In compositions” Y.-H. Kwon, G.H. Gainer, S. Bidnyk, Y.H. Cho, J.J. Song, M. Hansen, S.P. DenBaars |
|
Applied Physics Letters, V75, N17: pp. 2545-2547 |
|
Journal |
217. |
|
1999 |
|
“GaN-based FETs for Microwave Power Amplification” Y.F. Wu, B.P. Keller, S. Keller, J.J. Xu, B.J. Thibeault, S.P. DenBaars, U.K. Mishra |
|
IEICE Trans. Electron., VE82-C N11: pp. 1895-1905 |
|
Journal |
218. |
|
1999 |
|
“Femtosecond Z-scan measurement of GaN” Y.-L. Huang, C.-K. Sun, J.-C Liang, S. Keller, M.P. Mack, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters, V75, N22: pp. 3524-3526 |
|
Journal |
219. |
|
1999 |
|
“Large interband second-order susceptibilities in In/sub x/Ga/sub 1-x/N/GaN quantum wells” H.Schmidt, A.C, Abare, J.E.Bowers, S.P. DenBaars, A. Imamoglu, |
|
Applied Physics Letters, V75, N23: pp. 3611-3613 |
|
Journal |
220. |
|
1999 |
|
“Thermal conductivity of lateral epitaxial overgrown GaN films” C.-Y Luo, H. Marchand, D.R. Clarke, S.P. DenBaars |
|
Applied Physics Letters, V75, N26: pp. 4151-4153 |
|
Journal |
221. |
|
1999 |
|
“Thermal annealing of InGaN/GaN strained-layer quantum wells” M.C.-Y. Chan, K.-O. Tsang, E.H. Li, S.P. DenBaars |
|
MRS Internet Journal, V4S1, G6.25 |
|
Journal |
222. |
|
1999 |
|
“Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process” H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra |
|
MRS Internet Journal, V4S1, G4.5 |
|
Journal |
223. |
|
1999 |
|
“Spectroscopic studies in InGaN quantum wells” S.F. Chichibu, T. Sota, K. Wada., S.P. DenBaars, S. Nakamura |
|
MRS Internet Journal, V4S1, G2.7 |
|
Journal |
224. |
|
1999 |
|
“Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells” Y.-H. Cho, B.D. Little, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
MRS Internet Journal, V4S1, G2.4 |
|
Journal |
225. |
|
1999 |
|
“Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells” Y.-H. Cho, T.J. Schmidt, S. Bidnyk, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
MRS Internet Journal,V4S1, G6.44 |
|
Journal |
226. |
|
1999 |
|
“Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells” T.J. Schmidt, S. Bidnyk, Y.-H. Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
MRS Internet Journal, V4S1, G6.54 |
|
Journal |
227. |
|
1999 |
|
“Scanning tunneling microscope-induced luminescence of GaN at threading dislocations” S. Evoy, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Journal of Vacuum Science & Technology B, V17, N1: pp. 29-32 |
|
Journal |
228. |
|
2000 |
|
“Sims investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlXGa 1-X N,” G. Parish, S. Keller, S.P. DenBaars and U.K. Mishra |
|
Journal of Electronic Materials, V29, N1, pp. 15-20. |
|
Journal |
229. |
|
2000 |
|
“Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray defraction” P. Fini, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J.S. Speck |
|
Journal of Crystal Growth, V209: pp. 581-590 |
|
Journal |
230. |
|
2000 |
|
“Characterization of an AlGaN/GaN two-dimensional electron gas structure” A. Saxler, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck |
|
Journal of Applied Physics, V87, N1: pp. 369-374 |
|
Journal |
231. |
|
2000 |
|
“Depletion region effects in Mg-doped GaN” P. Kozodoy, S.P. DenBaars, U.K. Mishra |
|
Journal of Applied Physics, V87, N2: pp. 770-775 |
|
Journal |
232. |
|
2000 |
|
“Improved characteristics of InGaN multiple –quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao. A.C. Abare, L.A. Coldren, J.S. Speck, S.P. DenBaars |
|
Applied Physics Letters, V76, N5: pp. 529-531 |
|
Journal |
233. |
|
2000 |
|
“Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra |
|
Applied Physics Letters, V76, N6: pp. 718-720 |
|
Journal |
234. |
|
2000 |
|
“Heavy doping effects in Mg-doped GaN” P. Kozodoy, H. Xing, S.P. DenBaars, U.K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W.C. Mitchel |
|
Journal of Applied Physics, V87, N4: pp. 1832-1835 |
|
Journal |
235. |
|
2000 |
|
“Epitaxially-grown GaN junction field effect transistors” L. Zhang, L.F. Lester, A.G. Baca, R.J. Shul, P.C. Chang, C.G. Willison, U.K. Mishra, S.P. DenBaars, J.C. Zolper |
|
IEEE Transactions on Electron Devices, V47, N3: pp. 507-511 |
|
Journal |
236. |
|
2000 |
|
“Linear and nonlinear optical properties of In/sub x/Ga/sub 1-x/N/GaN heterostructures” Y.H. Cho, T.J. Schmidt, S. Bidnyk, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars |
|
Physical Review B, V61, N11: pp. 7571-7588 |
|
Journal |
237. |
|
2000 |
|
“Distributed feedback laser diodes employing embedded dielectric gratings located above the active region” A.C. Abare, S.P. DenBaars, L.A. Coldren |
|
IEICE Trans. Electron, VE83-C, N4: pp. 560-563 |
|
Journal |
238. |
|
2000 |
|
“Transient processes in AlGaN/GaN heterostructures field effect transistors” S.L. Rumyantsev, M.S. Shur, R. Gaska, X. Hu, A. Khan, G. Simin, J. Yang, N. Zhang, S.P. DenBaars, U.K. Mishra |
|
Electronics Letters, V36, N8: pp. 757-759 |
|
Journal |
239. |
|
2000 |
|
“Measured and calculated radiative lifetime and optical absorption of In/sub x/Ga/sub 1-x/ N/GaN quantum structures” E. Berkowitz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A.C, Abare, S.P. DenBaars, L.A. Coldren |
|
Physical Review B, V61, N16: pp. 10994-11008 |
|
Journal |
240. |
|
2000 |
|
“High voltage operation (>80V) of GaN bipolar junction transistors with low leakage” J.B. Limb, H. Xing, B. Moran, L. McCarthy, S.P. DenBaars, U.K. Mishra |
|
Applied Physics Letters, V76, N17: pp. 2457-2459 |
|
Journal |
241. |
|
2000 |
|
“Charge control and mobility in AlGaN/GaN transistors: experimental and theoretical studies” Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J. Singh |
|
Journal of Applied Physics, V87, N11: pp. 7981-7987 |
|
Journal |
242. |
|
2000 |
|
“Channeling as a mechanism for dry etch damage in GaN” E.D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S.P. DenBaars, L.A. Coldren, U.K. Mishra, E.L. Hu |
|
Applied Physics Letters, V76, N26: pp. 3941-3943 |
|
Journal |
243. |
|
2000 |
|
“In Situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN” P. Fini, A. Munkholm, C. Thompson, G.B. Stephenson, J.A. Eastman, M.V. R. Murty, O. Auciello, L. Zhao, S.P. DenBaars, J.S. Speck |
|
Applied Physics Letters, V76, N26: pp. 3893-3895 |
|
Journal |
244. |
|
2000 |
|
“Ultrafast optical characterization of carrier capture times in In/sub x/Ga/sub 1-x/ N multiple quantum wells” U. Ozgur, M.J. Bergmann, H.C. Casey, Jr., H.O. Everitt, A.C. Abare, S. Keller, S.P. DenBaars |
|
Applied Physics Letters, V77, N1: pp. 109-111 |
|
Journal |
245. |
|
2000 |
|
“Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars |
|
Mat. Res. Soc. Symp., V595, W1.4.1-W1.4.6 |
|
Journal |
246. |
|
2000 |
|
“Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes” A. Hierro, D. Kwan, S.A. Ringel, M. Hansen, J.S. Speck, U.K. Mishra, S.P. DenBaars |
|
Applied Physics Letters, V76, N21: pp. 3064-3066 |
|
Journal |
247. |
|
2000 |
|
“Transition between the 1x1 and (√3x2√3)R30 surface structures of GaN in the vapor-phase environment” A. Munkholm, C. Thompson, G. B. Stephenson, J.A. Eastman, O. Auciello, P. Fini, J.S. Speck, S.P. DenBaars |
|
Physica B, V283: pp. 217-222 |
|
Journal |
247a. |
|
2000 |
|
Chapter 1 pp. 1-25 “Basic Physics & Materials Technology of GaN LEDs and LDs”Steven P. DenBaars |
|
S. Nakamura, S.F. Chicibu Introduction to Nitride SemiconductorBlue Lasers and Light Emitting Diodes. Taylor & Francis: London |
|
Book Chapter |
248. |
|
2000 |
|
“Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors” J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBaars, J.S. Speck, U.K. Mishra |
|
Applied Physics Letters, V77, N2: pp. 250-252 |
|
Journal |
249. |
|
2000 |
|
“In situ studies of the effect of silicon on GaN growth modes” A. Munkholm, G. B. Stephenson, J. A. Eastman, O. Auciello, M. V. Ramana Murty, C. Thompson, P. Fini, J. S. Speck, S. P. DenBaars |
|
Journal of Crystal Growth, V.221, pp. 98-105 |
|
Journal |
250. |
|
2000 |
|
“Layer by layer growth of GaN induced by silicon” A. Munkholm, C. Thompson, M. V. Ramana Murty, J. A. Eastman, O. Auciello, G. B. Stephenson, P. Fini, S. P. DenBaars, J. S. Speck |
|
Applied Physics Letters, V77 N11, pp. 1626-1628 |
|
Journal |
251. |
|
2000 |
|
“Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy” B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, J. S. Speck |
|
Applied Physics Letters, V77 N18, pp. 2885-2887 |
|
Journal |
252. |
|
2000 |
|
“Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, James S. Speck, A. Saxler, S. Elhamri, W. C. Mitchel |
|
Japanese Journal of Applied Physics, V39 N10B (part 2), pp. L1023-L1025 |
|
Journal |
253. |
|
2000 |
|
“Dislocation reduction in GaN films through selective island growth of InGaN” S. Keller, G. Parish, J. S. Speck, S. P. DenBaars, U. K. Mishra |
|
Applied Physics Letters, V77 N17, pp. 2665-2667 |
|
Journal |
254. |
|
2000 |
|
“Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates” B. Moran, M. Hansen, M. D. Craven, J. S. Speck, S. P. DenBaars |
|
Journal of Crystal Growth, V221, pp. 301-304 |
|
Journal |
255. |
|
2000 |
|
“Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure” S. Elhamri, A. Saxler, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck |
|
Journal of Applied Physics, V88, N11, pp. 6583-6588 |
|
Journal |
256. |
|
2001 |
|
“Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes” S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura |
|
Physica Status Solidi A, V183, pp. 91-98 |
|
Journal |
257. |
|
2001 |
|
“Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells” G. Vaschenko, D. Patel, C. S. Menoni, S. Keller, U. K. Mishra, S. P. DenBaars |
|
Applied Physics Letters, V78, N5, pp. 640-642 |
|
Journal |
258. |
|
2001 |
|
“Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells” Y.-C. Huang, J.-C. Liang, C.-K. Sun, A. Abare, S. P. DenBaars |
|
Applied Physics Letters, V78, N7, pp. 928-930 |
|
Journal |
259. |
|
2001 |
|
“Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells” C.-K. Sun, Y.-K. Huang, J.-C. Liang, A. Abare, S. P. DenBaars |
|
Applied Physics Letters, V78, N9, pp. 1201-1203 |
|
Journal |
260. |
|
2001 |
|
“Spin coherence and dephasing in GaN” B. Beschoten, E. Johnston-Halperin, D. K. Young, M. Poggio, J. E. Grimaldi, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu, D. D. Awschalom |
|
Physical Review B, V63, pp. 121201-1-121201-4 |
|
Journal |
261. |
|
2001 |
|
“Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications” A. R. Stonas, T. Margalith, S. P. DenBaars, L. A. Coldren, E. L. Hu |
|
Applied Physics Letters, V78, N13, pp. 1945-1947 |
|
Journal |
262. |
|
2001 |
|
“GaN HBT: Toward an RF Device” L. S. McCarthy, I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, S. P. DenBaars, U. K. Mishra |
|
IEEE Transactions on Electron Devices, V48, N3, pp. 543-551 |
|
Journal |
263. |
|
2001 |
|
“Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB” S. Keller, Y.-F. Wu, G. Parish, B. Ziang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra |
|
IEEE Transactions on Electron Devices, V48, N3, pp. 552-559 |
|
Journal |
264. |
|
2001 |
|
“Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors” L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, U. K. Mishra |
|
Applied Physics Letters, V78, N15, pp. 2235-2237 |
|
Journal |
265. |
|
2001 |
|
“Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors” |
|
Journal of Applied Physics, V89 N12, pp. 7846-7851 |
|
Journal |
266. |
|
2001 |
|
“Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN” E. D. Haberer, C. H. Chen, M. Hansen, S. Keller, S. P. DenBaars, U. K. Mishra, E. L. Hu |
|
J. Vac. Sci. Technol. B, V19 N3, pp. 603-608 |
|
Journal |
267. |
|
2001 |
|
“Channeling as a mechanism for dry etch damage in GaN” E. D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S. DenBaars, L. Coldren, U. Mishra, E. L. Hu |
|
Appl. Phys. Lett., V76 N26, pp. 3941-3943 |
|
Journal |
268. |
|
2001 |
|
“Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy” C. K. Sun, S. W. Chu, S. P. Tai, S. Keller, A. Abare, U. K. Mishra, S. P. DenBaars |
|
Scanning, May-June 2001, V.23 N3, pp. 182-192 |
|
Magazine |
269. |
|
2001 |
|
“Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure” Z. Dziuba, M. Gorska, J. Antoszewski, A. Babinski, P. Kozodoy, S. Keller, B. Keller, S. P. DenBaars, U. K. Mishra |
|
Applied Physics A- Materials Science & Processing , V72 N6, pp. 691-698 |
|
Journal |
270. |
|
2001 |
|
“Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an InxGa 1-xN/GaN double heterostructures” C. K. Choi, B. D. Little, Y. H. Kwon, J. B. Lam, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars |
|
Physical Review B, V6319 N19, pp. U262-U267 |
|
Journal |
271. |
|
2001 |
|
“Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells” M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars |
|
Semiconductor Science and Technology, V16 N5, pp. 406-412 |
|
Journal |
272. |
|
2001 |
|
“Effect of growth termination conditions of the performance of AlGaN/GaN high electron mobility transistors” S. Keller, R. Ventury, G. Parish, S. P. DenBaars, U. K. Mishra |
|
Applied Physics Letters, V78 N20, pp. 3088-3090 |
|
Journal |
273. |
|
2001 |
|
“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN” S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra |
|
Applied Physics Letters, V78 N19, pp. 2876-2878 |
|
Journal |
274. |
|
2001 |
|
“Selective area mass transport reqrowth of gallium nitride” S. Heikman, S. P. DenBaars, U. K. Mishra |
|
Japanese Journal of Applied Physics, part 1, V40 N2A, pp. 565-566 |
|
Journal |
275. |
|
2001 |
|
“Investigations of chemical vapor deposition of GaN using synchotron radiation” C. Thompson, G. B. Stephenson, J. A. Eastman, A. Munkholm, O. Auciello, M. V. R. Murty, P. Fini, S. P. DenBaars, J. S. Speck |
|
Journal of the Electrochemical Society, V148 N5, pp. C390-C394 |
|
Journal |
276. |
|
2001 |
|
“Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states” C. K. Sun, J. C. Liang, X. Y. Yu, S. Keller, U. K. Mishra, S. P. DenBaars |
|
Applied Physics Letters, V78 N18, pp. 2724-2726 |
|
Journal |
277. |
|
2001 |
|
“Gallium nitride based transistors” H. Xing, S. Keller, Y. F. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. DenBaars, U. K. Mishra |
|
Journal of Physics-Condensed Matter, V13 N32, pp. 7139-7157 |
|
Journal |
278. |
|
2001 |
|
“Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures” P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Lepkowski, N. E. Christensen, A. Svane, M. Hansen, S. P. DenBaars, B. Damilano, N. Gandjean, J. Massies |
|
Physical Review B, V64 N11, pp. U459-U466 |
|
Journal |
279. |
|
2001 |
|
“AlGaN/AlN/GaN high-power microwave HEMT” L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Ke.ller, S. P. DenBaars, U. K. Mishra |
|
IEEE Electron Device Letters, V22 N10, pp. 457-459 |
|
Journal |
280. |
|
2001 |
|
“Infrared and Raman-scattering studies in a single-crystalline GaN nanowires” H. L. Liu, C. C. Chen, C. T. Chia, C. C. Yeh, C. H. Chen, M. Y. Yu, S. Keller, S. P. DenBaars |
|
Chemical Physical Letters, Vol. 345 No. 3-4, pp. 245-251 |
|
Journal |
281. |
|
2001 |
|
“Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck |
|
Journal of Crystal Growth, V233 N4, pp. 709-716 |
|
Journal |
282. |
|
2001 |
|
“Influence of growth temperatures and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, W. C. Mitchel |
|
Japanese Journal of Applied Physics, V40 N11, pp.6235-6238 |
|
Journal |
283. |
|
2001 |
|
“Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates” T. M. Katona, M. D. Craven, P. T. Fini, J. S. Speck, S. P. DenBaars |
|
Journal of Applied Physics, V79 N18, pp. 2907-2909 |
|
Journal |
284. |
|
2001 |
|
“Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy” S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, H. Okumura |
|
Applied Physics Letters, V79 N22, pp. 3600-3602 |
|
Journal |
285. |
|
2001 |
|
“Capture kinetics of electron traps in MBE-grown n-GaN”A. Hierro, A. R. Arehart, B. Heying, M. Hansen, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel |
|
Physical Status Solidi B, V228, N1, pp. 309-313 |
|
Journal |
286. |
|
2001 |
|
“Indium –surfectant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition” S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra |
|
Applied Physics Letters, V79 N21, pp. 3361-3363 |
|
Journal |
287. |
|
2001 |
|
“Generation of coherent acoustic phonons in strained GaN thin films” Y. K. Huang, G. W. Chern, C. K. Sun, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars |
|
Applied Physics Letters, V79 N20, 3361-3363 |
|
Journal |
288. |
|
2001 |
|
"AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy" I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra |
|
Journal of Applied Physics, Vol. 90 No. 10, pp. 5196-5201 Correction/Addition Vol. 91 No. 7, p. 4780 |
|
Journal |
289. |
|
2001 |
|
“Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN” A. Hierro, M. Hansen, J. J. Boeckl, L. Zhao, J. S. Speck, U. K. Mishra, S. P. DenBaars, S. A. Ringel |
|
Physica Status Solidi B, Vol. 228 No. 3, pp. 937-946 |
|
Journal |
290. |
|
2001 |
|
“Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN” S. Heikman, S. Keller, B. Moran, R. Coffie, S. P. DenBaars, U. K. Mishra |
|
Physica Status Solidi A, Vol. 188 No. 1, pp. 355-358 |
|
Journal |
291. |
|
2001 |
|
“Solar-blind p-GaN/i-AlGaN/n-AlGaN ultraviolet photodiodes on SiC substrate” G. Parish, M. Hansen, B. Moran, S. Keller, S. P. DenBaars, U. K. Mishra |
|
Physica Status Solidi A, Vol. 188 No. 1, pp. 297-300 |
|
Journal |
292. |
|
2001 |
|
“Kilovolt AlGaN/GaN HEMTs as switching devices” N. Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, T. P. Ma |
|
Physica Status Solidi A, Vol. 188 No. 1, pp. 213-217 |
|
Journal |
293. |
|
2001 |
|
“Indium surfectant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition” S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. P. DenBaars, U. K. Mishra |
|
Physica Status Solidi A, Vol. 188 No. 2, pp. 775-778 |
|
Journal |
294. |
|
2001 |
|
“Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes” M. Hansen, L. F. Chen, J. S. Speck, S. P. DenBaars |
|
Physica Status Solidi B, Vol. 228 No. 2, pp. 353-356 |
|
Journal |
295. |
|
2001 |
|
“Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers” C. K. Choi, Y. H. Kwon, B. D. Little, G. H. Gainer, J. J. Song, Y. C. Chang, S. Keller, U. K. Mishra, S. P. DenBaars |
|
Physical Review B, Vol. 6424 No. 24, pp. 5339:U608-U613 |
|
Journal |
296. |
|
2001 |
|
“Photoelectrochemical undercut etching for fabrication of GaN microelectrochemical systems” A. R. Stonas, N. C. MacDonald, K. L. Turner, S. P. DenBaars, E. L. Hu |
|
Journal of Vacuum Science & Technology B, Vol. 19 No. 6, pp. 2838-2841 |
|
Journal |
297. |
|
2002 |
|
“Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition” E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Frietas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, D. D. Koleske, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra |
|
Physical Review B, Vol. 6508 No. 8, pp. U344-U353 |
|
Journal |
298. |
|
2002 |
|
“Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors” L. S. McCarthy, I. P. Smorchkova, P. Fini, M. J. W Rodwell, J. Speck, S. P. DenBaars, U. K. Mishra |
|
Electronics Letters, Vol. 38 No. 3, pp. 144-145 |
|
Journal |
299. |
|
2002 |
|
“Systematic characterization of Cl-2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs” D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars, U. K. Mishra |
|
IEEE Electron Device Letters, Vol. 23 No. 2, pp. 76-78 |
|
Journal |
300. |
|
2002 |
|
“Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular beam epitaxy” A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. A. Ringel |
|
Applied Physics Letters, Vol. 80 No. 5, pp. 805-807 |
|
Journal |
301. |
|
2002 |
|
“Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN” M. Hansen, P. Fini, M. Craven, B. Heying, J. S. Speck , S. P. DenBaars |
|
Journal of Crystal Growth, Vol. 234, pp. 623-630 |
|
Journal |
302. |
|
2002 |
|
“Mg-rich precipitates in the p-type doping of InGaN-based laser diodes” M. Hansen, L. F. Chen, S. H. Lim, S. P. DenBaars, J. S. Speck |
|
Applied Physics Letters, Vol. 80 No. 14, pp. 2469-2471 |
|
Journal |
303. |
|
2002 |
|
“GaN-GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design” S. Keller, S. Heikman, L. Shen, I. P. Smorchkova, S. P. DenBaars, U. K. Mishra |
|
Applied Physics Letters, Vol. 80 No. 23, pp. 4387-4389 |
|
Journal |
304. |
|
2002 |
|
“Chemical mechanical polishing of gallium nitride” P. R. Tavernier, T. Margalith, L. A. Coldren, S. P. DenBaars, D. R. Clarke |
|
Electrochemical and Solid-State Letters, Vol. 5 No. 8, pp. 61-64 |
|
Journal |
305. |
|
2002 |
|
“Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr., W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Meyers, R. J. Molnar |
|
Materials Science & Engineering B, Vol. 93, pp. 39-48 |
|
Journal |
306. |
|
2002 |
|
“Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy” P. Waltereit, M. D. Craven, S. P. DenBaars, J. S. Speck |
|
Journal of Applied Physics, Vol. 92 No. 1, pp. 456-460 |
|
Journal |
307. |
|
2002 |
|
“Femtosecond dynamics of exciton bleaching in bulk GaN at room tempurature” Y. C. Huang, G. W. Chern, K. H. Lin, J. C. Liang, C. K. Sun, C. C. Hsu, S. Keller, S. P. DenBaars |
|
Applied Physics Letters, Vol. 81 No. 1, pp. 85-87 |
|
Journal |
308. |
|
2002 |
|
“Structural characterization of nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars |
|
Applied Physics Letters, Vol. 81 No. 3, pp. 469-471 |
|
Journal |
309. |
|
2002 |
|
“Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition”S. Heikman, S. Keller, S. P. Denbaars, U. K. Mishra |
|
Applied Physics Letters, Vol. 81 No. 3, pp. 439-441 |
|
Journal |
310. |
|
2002 |
|
“Threading dislocation reduction via laterally overgrown nonpolar (11 (2) over-bar0) a-plane GaN” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars |
|
Applied Physics Letters, Vol. 81, No. 7, pp. 1201-1203 |
|
Journal |
311. |
|
2002 |
|
“Tunable sampled-grating DBR lasers using quantum-well intermixing” E. J. Skogen, J. S. Barton, S. P. Denbaars, L. A. Coldren |
|
IEEE Photonics Technology Letters, Vol. 14 No. 9, pp. 1243-1245 |
|
Journal |
312. |
|
2002 |
|
“Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy” C. Poblenz, T. Mates, M. Craven, S. P. DenBaars, J. S. Speck |
|
Applied Physics Letters, Vol. 81 No. 15, pp. 2767-2769 |
|
Journal |
313. |
|
2002 |
|
“A quantum-well-intermixing process for wavelength-agile photonic integrated circuits” E. J. Skogen, J. S. Barton, S. P. DenBaars, L. A. Coldren |
|
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8 No. 4, pp. 863-869 |
|
Journal |
314. |
|
2002 |
|
“Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy” T. M. Katona, J. S. Speck, S. P. DenBaars |
|
Applied Physics Letters, Vol. 81 No. 19, pp. 3558-3560 |
|
Journal |
315. |
|
2002 |
|
“Ultrashort hole capture time in Mg-doped GaN thin films” K.-H. Lin, G.-W. Chern, S.-W. Chu, C.-K. Sun, H. Xing, Y. Smorchkova, S. Keller, U. Mishra, S. P. DenBaars |
|
Applied Physics Letters, Vol. 81 No. 21, pp. 3975-3977 |
|
Journal |
316. |
|
2002 |
|
“Higher efficiency InGaN laser diodes with an approved quantum well capping configuration” M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars |
|
Applied Physics Letters, Vol. 81 No. 22, pp. 4275-4277 |
|
Journal |
317. |
|
2002 |
|
“Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys” D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, I. Smorchkova |
|
Applied Physics Letters, Vol. 81 No. 23, pp. 4395-4397 |
|
Journal |
317. (a) |
|
2002 |
|
“Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)” T. M. Katona, J. S. Speck, S. P. DenBaars |
|
Physica Status Solidi A, Vol. 194, pp. 550-553 |
|
Journal |
317. (b) |
|
2002 |
|
“Nonpolar (11(2) over-bar0) a-plane GaN thin films grown on (1 (1) over-bar02) r-plane sapphire” M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars |
|
Physica Status Solidi A, Vol. 194, pp. 541-544 |
|
Journal |
318. |
|
2003 |
|
“AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching” Y. Gao, A. R. Stonas, I. Ben-Yaacov, U. Mishra, S. P. DenBaars, E. L. Hu |
|
Electronics Letters, Vol. 39 No. 1, pp. 148-149 |
|
Journal |
319. |
|
2003 |
|
“Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor” S. Estrada, H. Xing, A. Stonas, A. Huntington, U. Mishra, S. DenBaars, L. Coldren, E. Hu |
|
Applied Physics Letters, Vol. 82, No. 5, pp. 820-822 |
|
Journal |
320. |
|
2003 |
|
“Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells” S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura |
|
Journal of Applied Physics, Vol. 93, No. 4, pp. 2051-2054 |
|
Journal |
321. |
|
2003 |
|
“Memory effect and redistribution of Mg into sequencially regrown GaN layer by metalorganic chemical vapor deposition” H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, S. P. DenBaars, U. K. Mishra |
|
Japanese Journal of Applied Physics, Vol. 42, No. 1, pp. 50-53 |
|
Journal |
322. |
|
2003 |
|
“High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology” V. Paidi, X. Shouxuan, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. P. DenBaars, U. K. Mishra, S. Long, M. J. W. Rodwell |
|
IEEE Transactions on Microwave Theory & Techniques, Vol. 51, No. 2, pp. 643-652 |
|
Journal |
323. |
|
2003 |
|
“1.3 mu m wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: a prospect for polarization control” Y. L. Okuno, J. Geske, K.-G. Gan, Y. J. Chiu, S. P. DenBaars, J. E. Bowers |
|
Applied Physics Letters, Vol. 82, No. 15, pp. 2377-2379 |
|
Journal |
324. |
|
2003 |
|
“Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells” U. Ozgur, H. O. Everitt, S. Keller, S. P. DenBaars |
|
Applied Physics Letters, Vol. 82, No. 9, pp. 1416-1418 |
|
Journal |
325. |
|
2003 |
|
“Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films” P. Cantu, S. Keller, U. K. Mishra, S. P. DenBaars |
|
Applied Physics Letters, Vol. 82, No. 21, pp. 3683-3685 |
|
Journal |
326. |
|
2003 |
|
“Metalorganic chemical vapor deposition of group III nitrides – a discussion of critical issues” S. Keller, S.P. DenBaars |
|
Journal of Crystal Growth, Vol. 248, pp. 479-486 |
|
Journal |
327. |
|
2003 |
|
“Growth and characteristics of Fe-doped GaN” S. Heikman, S. Keller, T.Mates, S. P. DenBaars, U. K. Mishra |
|
Journal of Crystal Growth, Vol. 248, pp. 513-517 |
|
Journal |
328. |
|
2003 |
|
“Very high voltage operation (>330V) with high current gain of A1GaN/GaN HBTs” H.L. Xing, P.M. Chavarkar, S. Keller, S.P. DenBaars, U.K. Mishra |
|
IEEE Electron Device Letters, Vol. 24, No. 3, pp. 141-143 |
|
Journal |
329. |
|
2003 |
|
“Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures” S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, U. K. Mishra |
|
Journal of Applied Physics, Vol. 93, No. 12, pp. 10114-10118 |
|
Journal |
330. |
|
2003 |
|
“Si doping effect on strain reduction in compressively strained A10.49Ga0.51N thin films” P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck |
|
Applied Physics Letters, Vol.83, No. 4, pp. 674-676 |
|
Journal |
331. |
|
2003 |
|
“Non-planar selective area growth and characterization of GaN and A1GaN” S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra, F. Bertram, J. Christen |
|
Japanese Journal of Applied Physics Part 1 – Regular Papers, Short Notes & Review Papers, Vol. 42, No.10, pp. 6276-6283 |
|
Journal |
332. |
|
2003 |
|
“Variation of structural and optical properties across an A1GaN/GaN HEMT structure directly imaged by cathodoluminescence micrscopy” F. Bertram, J. Christen, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra |
|
Physica Status Solidi A-Applied Research, Vol. 200, No.1, pp. 183-186 |
|
Journal |
333. |
|
2003 |
|
“A widely tunable high-speed transmitter using an integrated SGDBR laser-semiconductor optical amplifier and Mach-Zehnder modulator” J.S. Barton, E.J. Skogen, M.L. Masanovic, S.P. DenBaars, L.A. Coldren |
|
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1113-1117 |
|
Journal |
334. |
|
2003 |
|
“Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators” E.J. Skogen, J.W. Raring, S.P. DenBaars, L.A. Coldren |
|
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 9, No. 5, pp. 1183-1190 |
|
Journal |
335. |
|
2003 |
|
“n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-infused at 550-750 degrees C” S. Estrada, A. Huntington, A. Stonas, H. Xing, U. Mishra, S. DenBaars, L. Coldren, E. Hu |
|
Applied Physics Letters, Vol. 93, No. 12, pp. 560-562 |
|
Journal |
336. |
|
2003 |
|
“High-linearity class B power amplifiers in GaN HEMT technology” X. Shouxuan, V. Paidi, R. Coffie, S. Keller, S. Heikman, B. Moran, A. Chini, S. P. DenBaars, U. Mishra, S. Long, M. J. W. Rodwell |
|
IEEE Microwave & Wireless Components Letters, Vol. 13, No. 7, pp. 284-286 |
|
Journal |
337. |
|
2003 |
|
“Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate” S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura |
|
Journal of Vacuum Science & Technology B, Vol. 21, No. 4, pp. 1856-1862 |
|
Journal |
338. |
|
2003 |
|
“Structural and morphological characteristics of planar(1120) a-plane gallium nitride grown by hydride vapor phase epitaxy” B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, S. Nakamura |
|
Applied Physics Letters, Vol. 83, No. 8, pp. 1554-1556 |
|
Journal |
339. |
|
2003 |
|
“Refractive index study of AlxGa1-xN films grown on sapphire substrates” N. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars |
|
Journal of Applied Physics, Vol. 94, No. 5, pp. 2980-2991 |
|
Journal |
340. |
|
2003 |
|
“Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope” N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati |
|
Journal of Applied Physics, Vol. 94, No. 7, pp. 4315-4319 |
|
Journal |
341. |
|
2003 |
|
“Observation of huge nonlinear absorption enhancement near exciton resonance in GaN” K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, C.-K. Sun |
|
Applied Physics Letters, Vol. 83, No. 15, pp. 3087-3089 |
|
Journal |
342. |
|
2003 |
|
“High conductivity modulation doped AlGaN/GaN multiple channel heterostructures” S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, U. K. Mishra |
|
Journal of Applied Physics, Vol. 94, No. 8, pp. 5321-5323 |
|
Journal |
343. |
|
2003 |
|
“Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition” M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, S. P. DenBaars |
|
Japanese Journal of Applied Physics, Vol. 42, pp. L235-L238 |
|
Journal |
344. |
|
2003 |
|
“Crystallographic wing tilt in laterally overgrown GaN” C. Rodel, H. Heinke, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars |
|
Journal of Physics D: Applied Physics, Vol. 36, pp. A188-A191 |
|
Journal |
345. |
|
2003 |
|
“Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition” S. Keller, P. Waltereit, P. Cantu, U. K. Mishra, J. S. Speck |
|
Optical Materials, Vol. 28, pp. 187-195 |
|
Journal |
346. |
|
2003 |
|
“Defect reduction in (1120) a-plane gallium nitride vial lateral epitaxial overgrowth by hydride vapor-phase epitaxy” B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura |
|
Applied Physics Letters, Vol. 83, pp. 644-646 |
|
Journal |
347. |
|
2004 |
|
“High-power polarization-engineered GaN/A1GaN HEMTs without surface passivation” L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. DenBaars, U.K. Mishra |
|
IEEE Electron Device Letters, Vol. 25, No. 1, pp. 7-9 |
|
Journal |
348. |
|
2004 |
|
“Power and linearity characteristics of GaN MISFETs on sapphire substrate” A. Chini, J. Wittich, S. Heikman, S. Keller, S.P. DenBaars, U.K. Mishra |
|
IEEE Electron Device Letters, Vol. 25, No. 2, pp. 55-57 |
|
Journal |
349. |
|
2004 |
|
“AlGaN/GaN current aperture vertical electron transistors with regrown channels” I. Ben-Yaacov, Y.-K. Seck, U. K. Mishra, S. P. DenBaars |
|
Journal of Applied Physics, Vol. 95, No. 4, pp. 2073-2078 |
|
Journal |
350. |
|
2004 |
|
“Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells” M. D. Craven, P. Waltereit, J. S. Speck, S. P. DenBaars |
|
Applied Physics Letters, Vol. 84, No. 4, pp. 496-498 |
|
Journal |
351. |
|
2004 |
|
“Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition” A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, S. A. Ringel |
|
Applied Physics Letters, Vol. 84, No. 3, pp. 374-376 |
|
Journal |
352. |
|
2004 |
|
“AlGaN/GaN polarization-doped field effect transistor for microwave power applications” S. Rajan, H. Xing, S. DenBaars, U. K. Mishra, D. Jena |
|
Applied Physics Letters, Vol. 84, No. 9, pp. 1591-1593 |
|
Journal |
353. |
|
2004 |
|
“Radiative and nonradiative processes in strain-free AlxGa1-x/N films studied by time-resolved photoluminescence and positron annihilation techniques” T. Onuma, S. F. Chichibu, A. Uedona, T. Sota, P. Cantu, T. M. Katona, J. F. Kaeding, S. Keller, U. K. Mishra, S. Nakamura, S. P. DenBaars |
|
Journal of Applied Physics, Vol. 95, No. 5, pp. 2495-2504 |
|
Journal |
354. |
|
2004 |
|
“Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition” M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, J. S. Speck |
|
Applied Physics Letters, Vol. 84, No. 8, pp. 1281-1283 |
|
Journal |
355. |
|
2004 |
|
“Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening” T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, S. Nakamura |
|
Applied Physics Letters, Vol. 84, No. 6, pp. 855-857 |
|
Journal |
356. |
|
2004 |
|
“Preparation of indium nitride micro-and nanostructures by ammonolysis of indium oxide” B. Schwenzer, L. Loeffler, R. Seshadri, S. Keller, F. F. Lange, S. P. DenBaars, U. K. Mishra |
|
Journal of Materials Chemistry, Vol. 14, No. 4, pp. 637-641 |
|
Journal |
357. |
|
2004 |
|
“The growth of N-face GaN by MOCVD: effect of Mg, Si, and In” P. R. Tavernier, T. Margalith, J. Williams, D. S. Green, S. Keller, S. P. DenBaars, U. K. Mishra, S. Nakamura, D. R. Clarke |
|
Journal of Crystal Growth, Vol. 264, No. 1-3, pp. 150-158 |
|
Journal |
358. |
|
2004 |
|
“Micro cavity effect in GaN-Based light-emitting diodes formed by laser lift-off and etch-back technique” T. Fujii, A. David, C. Schwach, P.M. Pattison, R. Sharma, K. Fujito, T. Margalith, S.P. DenBaars, C. Weisbuch, S. Nakamura |
|
Japanese Journal of Applied Physics Part 2 – Letters, Vol. 43, No.3B, pp. L411-L413 |
|
Journal |
359. |
|
2004 |
|
“Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%” P. Waltereit, H. Sato, C. Poblenz, D. S. Green, J. S. Brown, M. McLaurin, T. Katona, S. P. DenBaars, J. S. Speck, J. H. Liang, M. Kato, H. Tamura, S. Omori, C. Funaoka |
|
Applied Physics Letters, Vol. 84, No. 15, pp. 2748-2750 |
|
Journal |
360. |
|
2004 |
|
"Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1-xN" T. M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars |
|
Applied Physics Letters, Vol. 84, No. 24, pp. 5025-5027 |
|
Journal |
361. |
|
2004 |
|
"Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes" K.-G. Gan, C.-K. Sun, S. P. DenBaars, J. E. Bowers |
|
Applied Physics Letters, Vol. 84, No. 23, pp. 4675-4677 |
|
Journal |
362. |
|
2004 |
|
"Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth" T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura |
|
Applied Physics Letters, Vol. 84, No. 19, pp. 3768-3770 |
|
Journal |
363. |
|
2004 |
|
"High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication" Y. L. Okuno, S. P. DenBaars, J. E Bowers
|
|
Applied Physics Letters, Vol. 84, No. 18, pp. 3483-3485 |
|
Journal |
364. |
|
2004 |
|
"Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride" Y. Gao, M. D. Craven, J. S. Speck, S. P. DenBaars, E. L. Hu |
|
Applied Physics Letters, Vol. 84, No. 17, pp. 3322-3324 |
|
Journal |
365 |
|
2004 |
|
“Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design” L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S.P. Denbaars, U.K. Mishra
|
|
J. of Elec. Mat. 33 (5): 422-425 |
|
Journal |
366 |
|
2004 |
|
“Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching” Y. Gao, T. Fujii, R. Sharma, K. Fujito, S.P. Denbaars, S. Nakamura, E.L. Hu
|
|
Jpn. J. of Appl. Phys., 43 (5A) pp. L637-L639 |
|
Journal |
367 |
|
2004 |
|
“Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching” E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu
|
|
Appl. Phys. Lett., 85 (5), 762-764 |
|
Journal |
368 |
|
2004 |
|
“MOCVD growth of AlGaN films for solar blind photodetectors” P.C. Alejandro, S. Keller, T. Li, U.K. Mishra, J.S. Speck, S.P. Denbaars
|
|
Phys. Stat. Sol. A 201 (9); 2185-2189 |
|
Journal |
369 |
|
2004 |
|
“Orientation-mismatched wafer bonding for polarization control of 1.3 µm-wavelength vertical cavity surface emitting lasers (VCSEL)” Y.L. Okuno, J. Geske, Y.J. Chiu, S.P. Denbaars, J.E. Bowers
|
|
Institute of Physics Conference Series 174: 367-370 |
|
Journal
|
370 |
|
2004 |
|
“Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN” T.M. Katona, M.D. Craven, J.S. Speck, S.P. DenBaars
|
|
Appl. Phys. Lett., 85 (8), 1350-1352 |
|
Journal |
371 |
|
2004 |
|
“Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth” E. Skogen, J. Raring, S. DenBaars, L. Coldren
|
|
Elec. Lett. 40 (16), 993-994 |
|
Journal |
372 |
|
2004 |
|
“Wafer Bonding of GaN and ZnSSe for optoelectronic applications” A. Murai, L. McCarthy, U. Mishra, S.P. DenBaars, C. Kruse, S. Figge, D. Hommel
|
|
Jpn. J. of Appl. Phys., 43 (10A), L1275-1277 |
|
Journal |
373 |
|
2004 |
|
“Nonpolar a-plane p-type GaN and p-n junction diodes” A. Chakraborty, H. Xing, M.D. Craven, S. Keller, T. Mates, J.S. Speck, S.P. DenBaars, U.K. Mishra
|
|
J. of Appl. Phys., 96 (8), pp.4494-4499 |
|
Journal |
374 |
|
2004 |
|
“AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate” P.J. Hansen, L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, T.R. Taylor, S.P. DenBaars, U.K. Mishra, R.A. York, J.S. Speck
|
|
J. Vac. Sci. Technol. B 22(5), 2479-2485 |
|
Journal |
375 |
|
2004 |
|
“Growth of thick (1120) GaN using a metal interlayer” P.R. Tavernier, B. Imer, S.P. DenBaars, D.R. Clarke
|
|
Appl. Phys. Lett., 85 (20), 4630-4632 |
|
Journal |
376 |
|
2005 |
|
“Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties” B. Schwenzer, J. Hu, R. Seshadri, S. Keller, S.P. DenBaars, U.K. Mishra
|
|
Chem. Mater., 16, (24): 5088-5095 |
|
Journal |
377 |
|
2005 |
|
“Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electrolu-minescence emission peak” A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra
|
|
Appl. Phys. Lett., 85 (22), 5143-5145 |
|
Journal |
378 |
|
2005 |
|
“Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching” E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu
|
|
Appl. Phys. Lett., 85 (22), 5179-5181 |
|
Journal |
379 |
|
2005 |
|
“Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” H. Yu, L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, S.P. Denbaars, J.S. Speck, U.K. Mishra
|
|
Appl. Phys. Lett., 85 (22), 5254-5256 |
|
Journal |
380 |
|
2005 |
|
“High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP” E.J. Skogen, J.S. Barton, J.W. Raring, L.A. Coldren, S.P. DenBaars
|
|
J. of Cryst. Growth 272, 564-569 |
|
Journal |
381 |
|
2005 |
|
“Demonstration of negative chirp characteristics over wide wavelength range using monolithically integrated SG-DBR laser/electroabsorption modulator” J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren
|
|
Elec. Lett., 40 (25), 1599-1600 |
|
Journal |
382 |
|
2005 |
|
“Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer” B. Moran, F. Wu, A.E. Romanov, U.K. Mishra, S.P. DenBaars, J.S. Speck
|
|
J. of Cryst. Growth, 273, 38-47 |
|
Journal |
383 |
|
2005 |
|
“A study of regrowth interface and material quality for a novel InP-based architecture” J.W. Raring, E.J. Skogen, S.P. DenBaars, L.A. Coldren
|
|
J. of Cryst. Growth, 273, 26-37 |
|
Journal |
384 |
|
2005 |
|
“Widely Tunable Negative-Chirp SG-DBR Laser/EA-Modulated Transmitter” J.W. Raring, E.J. Skogen, L.A. Johansson, M.N. Sysak, S.P. DenBaars, L.A. Coldren
|
|
J. of Lightwave Tech., 23 (1), 80-86 |
|
Journal |
385 |
|
2005 |
|
“Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on laterally epitaxially overgrown a-plane GaN” A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra
|
|
Appl. Phys. Lett., 86 (3), 031901 |
|
Journal |
386 |
|
2005 |
|
“Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques” S.F. Chichibu, A. Uedono, T. Onuma, T. Sota, B.A. Haskell, S.P. DenBaars, J.S. Speck, S. Nakamura
|
|
Appl. Phys. Lett., Vol. 86 (2), 021914 |
|
Journal |
387 |
|
2005 |
|
“Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on Free-standing m-plane GaN substrates” A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. DenBaars, S. Nakamura, U.K. Mishra
|
|
Jpn. J. of Appl. Phys., 44 (5), L173-L175 |
|
Journal |
388 |
|
2005 |
|
“Measurement of second order susceptibilities of GaN and AlGaN” N.A. Sanford, A.V. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park, J.Y. Han, R.J. Molnar
|
|
J. of Appl. Phys., 97 (5), 053512 |
|
Journal |
389 |
|
2005 |
|
“Defect reduction in (1100) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy” B.A. Haskell, T.J. Baker, M.B. McLaurin, F. Wu, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura
|
|
Appl. Phys. Lett.., 86 (11), 111917 |
|
Journal |
390 |
|
2005 |
|
“Ion implanted AlGaN–GaN HEMTs with nonalloyed ohmic contacts” H. Yu, L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, U. Mishra
|
|
IEEE Elec. Dev. Lett., 26 (5), 283-285 |
|
Journal |
391 |
|
2005 |
|
“Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy” B.A Haskell, A. Chakraborty, F. Wu, H. Sasano, P.T. Fini, S.P. DenBaars, J.S. Speck, S. Nakamura
|
|
J. of Elec. Mat., 34 (4), 357-360 |
|
Journal |
392 |
|
2005 |
|
“Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN” G.A. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck. S. Keller, S. Nakamura, S.P. Denbaars
|
|
Phys. Stat. Sol. A 202 (5), 846-849 |
|
Journal |
393 |
|
2005 |
|
“Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering” T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S.P. Denbaars, U.K. Mishra
|
|
Phys. Stat. Sol A 202 (5), 837-840 |
|
Journal |
394 |
|
2005 |
|
“Localized exciton dynamics in nonpolar (1120) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth” T. Onuma, A. Chakraborty, B.A. Haskell, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, S.F. Chichibu
|
|
Appl. Phys. Lett., 86 (15), 151918 |
|
Journal |
395 |
|
2005 |
|
“Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide” C. Moe, H. Masui, M.C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J.S. Speck, S.P. DenBaars, C. Hussel, D. Emerson
|
|
Jpn. J. of Appl. Phys., 44 (17), L502-L504 |
|
Journal |
396 |
|
2005 |
|
“Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates” S. Heikman, S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U.K. Mishra, J.S. Speck, S.P. DenBaars
|
|
Jpn. J. of Appl. Phys., 44 (13), L405-L407 |
|
Journal |
397 |
|
2005 |
|
“Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor” B. Schwenzer, C. Meier, O. Masala, R. Seshadri, S.P. DenBaars, U.K. Mishra
|
|
J. Mater. Chem., 15 (19), 1891-1895 |
|
Journal |
398 |
|
2005 |
|
“Optical evidence for lack of polarization in (1120) oriented GaN/(AlGa)N quantum structures” N. Akopian, G. Bahir, D. Gershoni, M.D. Craven, J.S. Speck, S.P. DenBaars
|
|
Appl. Phys. Lett., 86 (20), 202104 |
|
Journal |
399 |
|
2005 |
|
“Multiple-band-edge quantum-well intermixing in the InGaAs/In |