Publications

No.

Year

Title and Authors

Publisher

Category

1

1986

 "Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner and H.C. Lee

J. Crystal Growth, 77, 186

Refereed Conference Proceedings

2

1987

"The Effects of Hydrodynamics Interrupted Growth and Growth Temperature on the Interface Properties of AlGaAs/GaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition", S.P. DenBaars, H.C. Lee, A. Hariz, and P.D. Dapkus

Technical Program of the Electronic Materials Conference, paper N7, 50

Refereed Conference Proceedings

3

1987

"GaAs/AlGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy",S.P. DenBaars, C.A. Hariz, and P.D. Dapkus

Appl. Phys. Lett. 51, 1530

Journal

4

1987

"The Growth of AlGaAs/GaAs Heterostructures by Atomic Layer Epitaxy" Epitaxy of Semiconductor Layered Structures, S.P. DenBaars, A. Hariz, C.A. Beyler, B.Y. Maa, Q. Chen, and P.D. Dapkus

Mat. Res. Soc. Proceedings, Vol. 102, p. 527, Boston, MA

Refereed Conference Proceedings

5

1987

"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", S.P. DenBaars, P.D. Dapkus, Q. Chen, W.G. Jeong, and B.Y. Maa

Materials Research Society, Symposium C, Epitaxy of Semiconductor Layered Structures, (Paper C7.9), Boston, MA, December

Refereed Conference Proceedings

6

1987

"AlGaAs/GaAs Quantum Wells Grown by Atomic Layer Epitaxy", S.P. DenBaars, C.A. Beyler,A. Hariz, and P.D. Dapkus

Technical Digest Third Biennial OMVPE Workshop, (Paper A2), Brewster, MA, September

Conference Proceedings

7

1988

"Atomic Layer Epitaxy for the Growth of Heterostructure Devices", S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz, and K. Dzurko

Crystal Growth, 93, 195

Journal

8

1988

"Thermal and Laser Assisted Atomic Layer Epitaxy of Compound Semiconductors", S.P. DenBaars, P.D. Dapkus, J.S. Osinski, M. Zandian, C.A. Beyler, and K.M. Dzurko

Int. Symp. GaAs and Related Compounds, Atlanta, GA 1988, Inst. Phys. Conf. Ser. No. 96, 89

Refereed Conference Proceedings

9

1989

"Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, and A. Melas

J. Electrochem.  Soc., 136, No. 7, 2067

Journal

10

1989

"Minority Carrier Lifetimes in Undoped AlGaAs/GaAs Multiple Quantum Wells", A. Hariz, P.D. Dapkus, H.C. Lee, E.P. Menu, and S.P. DenBaars

Appl. Phys. Lett., 54, 635

Journal

11

1989

"The Role of Surface and Gas Phase Reactions in Atomic Layer  Epitaxy", P.D. Dapkus, S.P. DenBaars, Q. Chen, W.G. Jeong, and B.Y. Maa

Prog. Crystal Growth and Charact., 19, 137

Journal

12

1989

"Atomic Layer Epitaxy of Compound Semiconductors with Metalorganic Precursors", S. P. DenBaars and P.D. Dapkus

J. Crystal Growth, 98, 195

Journal

13

1990

"Atmospheric Atomic Layer Epitaxy", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars,

Acta Polytechnica Scandivica, Ch. 195, 39

Journal

14

1991

"Atmospheric Atomic Layer Epitaxy: Mechanisms and Applications", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars

J. Crystal Growth, 107, 73

Journal

15

1992

"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves", D.B. Young, D.I. Babic, S.P. DenBaars, and L.A. Coldren

Electronic Lett. 28, No.20, 1873

Journal

16

1992

"Growth of High Quality InxGa1-xAs/InP Quantum Wells with Tertiarybutylarsine and Tertiarybutylphosphine", M. P. Mack, C. M. Reaves, P. J. Corvini, S.P. DenBaars, M. S. Leonard, M. Mondry and J. L. Merz

Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper J2, p.39

Conference Proceedings

17

1992

"Fe-Doped Semi-Insulating InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine, Trimethylindium, and Ferrocene", P.J. Corvini, M. Hashemi, S.P. DenBaars, J.E. Bowers

Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper P4, p.54

Conference Proceedings

18

1992

"Wide tunability and large mode-suppression in a multisection semiconductor laser using sampled gratings", V.J. Jayaraman, L.A. Coldren, S.P. DenBaars, A. Mather, and P.D. Dapkus

Proceedings of the Integrated Photonics Research Conference, New Orleans, LA,  WF-1, pp. 54-55

Conference Proceedings

19

1992

"High Performance Heterojunction InGaAs/InP JFET grown by MOCVD using Tertiarybutylarsine and Tertiarybutylphosphine", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

P7, IEDM Tech. Digest, 311

Journal

20

1992

"Visible Light Emitting Diodes: Materials Growth and Properties" S.P. DenBaars,

Solid State Luminescence-Theory, Materials & Devices, Chapter 8, pp. 263-291. A.H. Kitai, editor ( Chapman and Hall, London, England )

Book Chapter

21

1993

"High Speed p+ GaInAs-n-InP Heterojunction JFETs (HJFETs) grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

IEEE Electron. Device Lett. 14,  No. 2., 60

Journal

22

1993

"High Speed Heterojunction JFETs grown by Non-Hydride MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

Proceedings ofUltrafast electronics and Optoelectronics Conference

Conference Proceedings

23

1993

"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine and Tertiarybutylphosphine", M. E. Heimbuch, A.L. Holmes, S.P. DenBaars, L.A. Coldren, and J.E. Bowers

Electronics Letters, 29, No. 4, pp.340-341

Journal

24

1993

"Novel High Power Heterojunction JFETs (HJFETs) Grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France,  ISBN 0-7803-0993-6,  pp. 375-378, IEEE Society, Piscataway, New Jersey

Conference Proceedings

25

1993

"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid Group V Sources", M. E. Heimbuch A.L. Holmes, Jr., S.P. DenBaars, L.A. Coldren, and J.E. Bowers

IEEE Proceedings of the 5th Intl. InP and Related Materials  Conf.,Paris, France,  ISBN 0-7803-0993-6,  pp. 239-242, IEEE Society, Piscataway, New Jersey

Conference Proceedings

26

1993

"Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs(11) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnatmurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. DenBaars

Mat. Research Soc. Proceedings, San Francisco, April

Refereed Conference Proceedings

27

1993

"35 GHz fmax InP JFET Grown by MOCVD Using Tertiarybutylphosphine (TBP)", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra

Electronics Lett. 29, No. 4, pp.372-374

Journal

28

1993

"Low Threshold Strained InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown  with TBA and TBP", S.P. DenBaars, A.L.Holmes, Jr., M. E. Heimbuch, and C. M. Reaves

Late News paper, Extended Abstracts of European Workshop on MOVPE-V, pp. E-19-21, Malmo, Sweden, June

Conference Proceedings

29

1993

"Strained InGaAsP Single Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", A.L. Holmes, M.E. Heimbuch, and S.P. DenBaars

Appl. Physics Lettters, V63, N25:3417-3419, December

Journal

30

1993

"Direct Formation of Quantum-sized Dots from Uniform Coherent Islands of InGaAs on GaAs Surfaces", D.Leonard, M. Krishnamurty, C.M. Reaves, P.M. Petroff, and S.P. DenBaars

 , V63, N23:3203-3205, December

Journal

33

1993

"Low Threshold 1.5 Mu-M Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", M. E. Heimbuch, A. L. Holmes, M. P. Mack, S. P. DenBaars

Electronics Letters, V29, N4: 340-342

Journal

34

1993

"35 GHz F (Max) InP JFet Grown by Non-Hydride MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra

Electronics Letters, V29, N4: 372-373

Journal

35

1993

"High-Speed P+ GaInAs-N InP Heterojunction JFets (HJFETS) Grown by MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra

IEEE Electron Device Letters, V14, N2: 60-62

Journal

36

1993

"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550 NM) Lightwaves", D. B. Young, D. I. Babic, S. P. DenBaars, L. A. Coldren

Electronics Letters, V28, N20: 1873-1874

Journal

37

1993

"Photoluminescence Studies of a Quantum Well Modulated  by Facetting on GaAs(110) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnamurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, and S.P. DenBaars

Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society. Symposium Proceedings Vol. 312)

Conference Proceedings

38

1994

"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.5 5µm InxGa1-xAsInP Quantum Well Lasers", M. Heimbuch, A.L. Holmes, C.M. Reaves, S.P. DenBaars, and L.A. Coldren

Journal  of Electronic Materials, V23, N2:87-91, February

Journal

39

1994

"High Performance InP JFET grown by Metalorganic Chemical Vapor Deposition using Tertiarybutylphosphine (TBP) as the Phosphorous Source", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra

Journal  of Electronic Materials, V23, N2:233-237, February

Journal

40

1994

"Formation of Coherently Strained Self-Assembled InP Quantum Islands on InGaP/GaAs", S. P. DenBaars, C. M. Reaves, V. Bresslerhill, S. Varma

Journal of Crystal Growth, V145, N1-4: 721-727

Journal

41

1994

"Flow Modulation Epitaxy of GaXIn(1-X)As/AlAs Heterostructures on InP for Resonant Tunneling Diodes”, B.P. Keller, J.C. Yen, A.L.Homes, S.P.DenBaars, U.K.Mishra

Applied Surface Science, V82-3, 126-131

Journal

42

1994

"Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room-Temperature Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, E. Hu, S. P. DenBaars

Journal of Vacuum Science and Technology B, V12, N6: 3704-3707

Journal

43

1994

"MBE and MOCVD Growth and Properties of Self-Assembling Quantum Dot Arrays in III-V Semiconductor Structures", P. M. Petroff, S. P. DenBaars

Superlattices and Microstructures, V15, N1: 15-21

Journal

44

1994

"GaXIn1-XAs/AlAs Resonant Tunneling Diodes Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", B. P. Keller, J. C. Yen, S. P. DenBaars, U. K. Mishra

Applied Physics Letters, V65, N17: 2159-2161

Journal

45

1994

"Widely Tunable Continuous-Wave InGaAsP/LnP Sampled Grating Lasers", V. Jayaraman, M. E. Heimbuch, L. A. Coldren, S. P. DenBaars

Electronics Letters, V30, N18: 1492-1494.

Journal

46

1994

"Field-Induced Guide Antiguide Modulators on InGaAsP/InP", S. L. Lee, M. E. Heimbuch, C. J. Mahon, N. Dagli

Electronics Letters, V30, N12:954-956

Journal

47

1994

"Passivation of InGaAs/InP Surface Quantum Wells by Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, J. Merz, S. P. DenBaars

Applied Physics Letters, V64, N20: 2658-2660

Journal

48

1994

"Continuous-Wave Operation of Sampled Grating Tunable Lasers with 10mwatt Output Power, >60nm Tuning, and Monotonic Tuning CVharacteristics", V.J. Jayaraman, M.E. Heimbuch, L.A. Coldren, and S.P. DenBaars

IEEE Proceedings of the 6th Intl. InP and Related Materials Conf

Conference Proceedings

49

1994

"Compressively Strained 1.55µm InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown with TBA and TBP", S.P. DenBaars, A.L. Holmes, M.H. Heimbuch

SPIE Proceedings of the Optoelectronics/Laser Conf.

Conference Proceedings

50

1994

"Coupling of Terahertz Radiation with Wispering Gallery Mode Microdisk Lasers", K.B. Nordstrom, S.J. Allen, M.E. Heimbuch, S.P. DenBaars, A.F.J. Levi

Proceedings of the Conf  on Laser and Electro-Optics

Conference Proceedings

51

1994

 "GaInAs/GaInP Double Barrier Structures:  Growth and Application in Tunneling Diodes", C.M. Reaves, J.C. Yen, N.A. Cevallos, U.K. Mishra, and S.P. DenBaars

Compound Semiconductor Epitaxy, edited by C.W. Tu, L.A. Kolodziejski, and V.R. McCrary (Materials Research Society Symposium Proceedings Vol. 320), 147-152

Conference Proceedings

52

1995

"Characterization of MOCVD-Grown InP on InGaP/GaAs", C. M. Reaves, V. Bresslerhill, S. Varma, W. H. Weinburg, S. P. DenBaars

Surface Science, V326, N3: 209-217

Journal

53

1995

"Indium Phosphide (INP) Based Heterostructure Materials and Devices Grown by MOCVD Using Tertiarybutylarsine (TBA) Tertiarybutylphosphine (TBP)", S. P. DenBaars, A. L. Holmes, M. E. Heimbuch, V. J. Jayaraman

Journal of the Korean Physical Society, V28, S: S37-S42.

Journal

54

1995

"Low-Temperature PD Bonding of III-V Semiconductors", I. H. Tan, C. Reaves, A. L. Holmes, E. L. Hu, S. P. DenBaars

Electronics Letters, V31, N7: 588-589

Journal

55

1995

"Effect of Atmospheric Pressure MOCVD Growth Conditions on UV Band-Edge Photoluminescence in GAn Thin Films", B. P. Keller, S. Keller, D. Kapolnek, M. Kato, S. P. DenBaars

Electronic Letters, V31, N13: 1102-1103

Journal

56

1995

"On the Interface Resistance of Regrwon GaInAs on InP", K. Hiziloglu, M.M. Hashemi, S.P. DenBaars, and U.K. Mishra

Solid State Electronics, V38, N4: 905-908

Journal

57

1995

"Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire", D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck

Applied Physics Letters, v67, N11: 1541-1543

Journal

58

1995

 "InP as Self Assembled Quantum Structures", C.M. Reaves, N.A. Cevallos, G.C. Hsueh, Y.M. Cheng, W.H. Weinberg, P.M. Petroff, and S.P. DenBaars

Proceeding of the Seventh International Conference on Indium Phosphide and Related Materials.

Conference Proceedings

59

1995

"Nanoscale characterization of InP islands on InGaP(001)", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg

OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), vol. 5, 36-38

Journal

60

1993

“Luminescence Enhancement of  InGaAs/InP Surface Quantum Wells by Room –Temperature  Ion-Gun “, Y.L. Chang, I.H. Tan. C.M. Reaves, J. Merz, E. Hu, and S.P. DenBaars

Phys. Rev. Letters.

Journal

61

1994

“GaInAs/GaInP Double Barrier Structure: Growth and Application to Tunneling Devices”, C.M. Reaves, J. Yen, M.S. Leonard, A.L. Holmes, U.K. Mishra, S.P. DenBaars

Materials Res. Soc., 1994, 147-152

Conference Proceedings

62

1995

"MOCVD Growth of High Optical Quality and High Mobility GaN", B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars

Journal Electronic Materials, Nov. 1995 V24 N11:1707-1709.

Journal

63

1996

"The Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films", B. Heying, X. H. Wu, S. Keller, Y. Li, D Kapolnek, B. Keller, S. P. DenBaars, J. S. Speck

Applied Physics Letters, 29 Jan. 1996, V68 N5:643-645

Journal

64

1995

"Growth and Characterization of InGaN/GaN Double Heterostructure LEDs Grown by MOCVD", S. Keller, B. P. Keller, Y.-F. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. K. Mishra, S. P. DenBaars

Special Issue on Proceedings of Topical Workshop on III-V Nitrides Pergamon.

Conference Proceedings

65

1995

"Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100)", C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars

Journal of Electronic Materials, Nov. 1995, V24, N11:1605-1609

Journal

66

1995

"Characterization of InP Islands on InGaP/GaAs(001):  Effect of Deposition Temperature", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg

Surface Science, Nov 1, 1995, V341 N1-2: 29-39

Journal

67

1996

"Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Metal-Organic Chemical Vapor Deposition", S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, X. H. Wu, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars

Applied Physics Letters, 11 Mar. 1996, V68 N11: 1525-1527

Journal

68

1996

"Effect of the  Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire", S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars.

Japanese J. Appl. Physics, 1 March 1996, V35, N3A: L285-8.

Journal

69

1996

"Nucleation Layer Evolution in Metal-Organic Chemical Vapor Deposition Grown GaN", X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck.

Applied Physics Letters, 4 March1996, V68 N10: 1371-1373.

Journal

70

1995

“High Performance AlAs/Ga/sub x/In/sub 1-x/As Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition,” J.C. Yen, B.P. Keller, S.P. DenBaars, U.K. Mishra.

Journal of Electronic Materials, Oct. 1995. V24, N10:1387-1390.

Journal

71

1995

“Analysis of InP Etched Surfaces Using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures,” Yu, DG; Keller, B.P.; Holmes, A.L., Jr.; Hu, E.L.; and others.

Journal of Vacuum Science & Technology B, Nov-Dec. 1995, V13, N6:2381-2385.

Journal

72

1995

“Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with tertiarybutylphosphine (TBP). Itaya, K.; Holmes, A.L., Jr.; Keller, S.; Hummel, S.G.; Coldren, L.A. and DenBaars, S.P.

Japanese Journal of Applied Physics, Part 2 (Letters), 15 Nov. 1995, V34, N11B: L1540-1542.

Journal

73

1995

“From research to manufacture-the evolution of MOCVD,” Grodzinski, P.; DenBaars, S.P.; Lee, H.C.

JOM, Dec. 1995, V47, N12:

pp. 25-32.

Journal

74

1996

“Field emission from selectively regrown GaN pyramids,”  Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

IEEE, 1996, pp.152-153.

Conference Proceedings

75

1996

“GaN HFETs and MODFETs with very high breakdown voltage and large transconductance,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; Mishra, U.K. and DenBaars, S.P.

IEEE, 1996, pp. 60-61.

Conference Proceedings

76

1996

“Ion damage propagation in dry-etched InP-based structures,” Hu, E.L.; Yu, D.G.; Chen, C.-H.; Keller, B.; and DenBaars, S.P.

IEEE, 1996, pages 107-110.

Conference Proceedings

77

1996

“InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

IEEE, 1996, pp. 157-158 Volume 2.

Conference Proceedings

78

1996

“Cleaved facets in GaN by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E.; Speck, J.S. and DenBaars, S.P.

Materials Res. Soc, 1996,

pp. 165-170.

Conference Proceedings

79

1996

“Long-wavelength vertical-cavity surface-emitting laser diodes,” Babic, D.I.; Jayaraman, V.; Margalit, N.M.; Streubel, K.; and DenBaars, S.P.

Materials Research. Society, 1996, pp. 63-74.

Conference Proceedings

80

1996

“Absolute internal quantum efficiency of an InGaN/GaN quantum well,” Reese, C.; Yablonovitch, E.; Keller, S.; Keller, B.; Mishra, U.K. and DenBaars, S.P.

 Opt. Soc. America, 1996, p.  472.

81

1996

“InP-based devices and their applications for merged FET-HBT technologies,” Parikh, P.; Kiziloglu, K.; Mondry, M.; Chavarkar, P.; Mishra, U. and DenBaars, S.

Microwave and Optical Technology Letters, 20 Feb. 1996, V11, N3: pp. 121-125.

Journal

82

1996

“Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP.” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

Electronics Letters, 14 March 1996, V32, N6: pp.  593-594.

Journal

83

1996

“Low interface trap density for remote plasma deposited SiO/sub 2/ on n-type GaN,” Casey, H.C., Jr.; Fountain, G.G.; Alley, R.G.; Keller, B.P.; and DenBaars, S.

Applied Physics Letters, 25 March 1996, V68, N13: pp. 1850-1852.

Journal

84 (a)

1996

“Cleaved GaN facets by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E. and DenBaars, S.P.

Applied Physics Letters, 8 April 1996, V68, N15: pp. 2147-2149.

Journal

84 (b)

1996

“Growth and Characterization of bulk InGaN films and quantum wells” S. Keller, B. P. Keller,   D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. DenBaars

Applied Physics Letters, 27 May 1996, V68, N22: pp. 3147-3149

Journal

85

1996

“InP-based multiple quantum well structures grown with tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP): effects of growth interruptions on structural and optical properties. Holmes, A.L., Jr.; Heimbuch, M.E.; Fish, G.; Coldren, L.A.; and DenBaars, S.P.

Journal of Electronic Materials, June 1996, V25, N6: pp. 965-971.

Journal

86

1996

“A new FET-based integrated circuit technology: the SASSFET,” Parikh, P.A.; Jiang, W.N.; Chavarkar, P.M.; Kiziloglu, K.; Mishra,, U.K. and DenBaars, S.P.

IEEE Electron Device Letters, July 1996, V17, N7: pp. 375-357.

Journal

87

1996

“Photocurrent decay in n-type GaN thin films,” Qiu, C.H.; Melton, W.; Leksono, M.W.; Pankove, J.I.; Keller, B.P. and DenBaars, S.P.

Applied Physics Letters, 26 August 1996, V69, N9: pp. 1282-1284.

Journal

88

1996

“InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range,” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

 Electronics Letters, 29 Aug. 1996, V32, N18: pp. 1697-1699.

Journal

89

1996

“Control of III-V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness,” Gaffney, M.; Reaves, C.M.; Smith, R.S.; Holmes, A.L., Jr.; and DenBaars, S.P.

Journal of Crystal Growth, Sept. 1996, V167, N1-2: pp. 8-16.

Journal

90

1996

“Measured microwave power performance of AlGaN/GaN MODFET,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.

IEEE Electron Device Letters, Sept. 1996, V17, N9: pp. 455-457.

Journal

91

1996

“Very high breakdown voltage and large transconductance realized on GaN heterojunction  field effect transistors,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.

Applied Physics Letters, 2 Sept. 1996, V69, N10: pp. 1438-1440.

Journal

92

1996

“Defect structure of metal-organic chemical vapor deposition-grown  epitaxial (0001) GaN/Al/sub 2/O/sub 3/,” Wu, X.H.; Brown, L.M.; Kapolnek, D.; Keller, S.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.

Journal of Applied Physics, 15 Sept. 1996, V80, N6: pp. 3228-3237.

Journal

93

1996

“Radiative recombination lifetime measurements of InGaN single quantum      well,” Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M.; Bowers, J.E. & DenBaars, S.P.

Applied Physics Letters, 23 Sept. 1996, V69, N13: pp. 1936-1938.

Journal

94

1996

“Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100),” Hsueh, G.C.; Reaves, C.M.; DenBaars, S.P.; Weinberg, W.H.

Surface Science, 10 Oct. 1996, V366, N1: pp. 129-139.

Journal

95

1996

“High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts,” Shealy, J.B.; Matloubian, M.; Liu, T.Y.; Thompson, M.A.; Mishra, U.K. and DenBaars, S.P.

IEEE Electron Device Letters, Nov. 1996, V17, N11: pp. 540-542.

Journal

96

1996

“Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by      ballistic-electron-emission microscopy,” O'Shea, J.J.; Reaves, C.M.; DenBaars, S.P.; Chin, M.A.; and Narayanamurti, V.

Applied Physics Letters, 11 Nov. 1996, V69, N20: pp. 3022-3024.

Journal

97

1996

“45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.

Applied Physics Letters, 18 Nov. 1996, V69, N21: pp. 3131-3133.

Journal

98

1996

“Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition,” Wu, X.H.; Fini, P.; Keller, S.; Tarsa, E.J.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.

Japanese Journal of Applied Physics, Part 2 (Letters), 15 Dec. 1996, V35, N12B: L1648-1651

Journal

99

1996

“Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface,” Reaves, C.M.; Pelzel, R.I.; Hsueh, G.C.; Weinberg, W.H.; and DenBaars, S.P.

Applied Physics Letters, 16 Dec. 1996, V69, N25: pp. 3878-3880.

Journal

100

1996

“Real-time composition and thickness control techniques in a metalorganic chemical vapor deposition process,” Gaffney, M.S.; Reaves, C.M.; Holmes, A.L., Jr.; Smith, R.S.; and DenBaars, S.P.

Materials Res. Soc, 1996. pp. 133-138.

Conference Proceedings

101

1997

“Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition,” Keller, S.; Keller, B.; Kapolnek, D.; Mishra, U.; & DenBaars, S.

Journal of Crystal Growth, Jan. 1997, V170, N1-4: pp. 349-352.

Journal

102

1997

“Selective area epitaxy of GaN for electron field emission devices,” Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; and Mishra, U.K. and DenBaars, S.P.

Journal of Crystal Growth, Jan. 1997, V170, N.1-4: pp.  340-343.

Journal

103

1997

“Ballistic electron emission microscopy study of transport in GaN thin films,” Brazel, E.G.; Chin, M.A.; Narayanamurti, V.; Kapolnek, D.; and Mishra, U.K. and DenBaars, S.P.

Applied Physics Letters, 20 Jan. 1997, V70, N3: pages 330-332.

Journal

104

1997

“Selective-area regrowth of GaN field emission tips,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

Solid-State Electronics, Feb. 1997, V41, N2: pp. 243-245.

Journal

105

1997

“Low resistance ohmic contact to n-GaN with a separate layer method,” Wu, Y.-F.; Jiang, W.-N.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.

Solid-State Electronics, Feb. 1997, V41, N2: pp. 165-168.

Journal

106

1997

“Comparing ion damage in GaAs and InP,” Yu, D.G.; Chen, C.-H.; Holmes, A.L., Jr.; Hu, E.L.; and DenBaars, S.P.

Microelectronic Engineering, Feb. 1997, V35, N1-4: pp. 95-98.

Journal

107

1997

“GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage,” Nguyen, N.X.; Keller, B.P.; Keller, S.; Wu, Y.-F.; Mishra, U.K. and DenBaars, S.P.

Electronics Letters, 13 Feb. 1997, V33, N4: pp. 334-335.

Journal

108

1997

“Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration,” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Krishnankutty, S.; Keller, S.; Abare, A.; Coldren, L.; Mishra, U. & DenBaars, S.

Journal of Applied Physics, 15 Feb. 1997, V81, N4: pp. 2021-2023.

Journal

109

1997

“Accurate mobility and carrier concentration analysis for GaN,” Look, D.C.; Sizelove, J.R.; Keller, S.; Wu, Y.F.; Mack, M.; Mishra, U.K. & DenBaars, S.P.

Solid State Communications, April 1997, V102, N4: pp. 297-300.

Journal

110

1997

“Femtosecond studies of carrier dynamics in InGaN,” Sun, C.-K.; Vallee, F.; Keller, S.; Bowers, J.E.; and DenBaars, S.P.

Applied Physics Letters, 14 April 1997, V70, N15: pp. 2004-2006.

Journal

111

1997

“Gain spectroscopy on InGaN/GaN quantum well diodes,” Kuball, M.; Jeon, E.S.; Song, Y.-K.; Nurmikko, A.V.; Keller, S.; Kozodoy, P.; Steigeruald, D,; Mishra, U.K. and DenBaars, S.P.

Applied Physics Letters, 12 May 1997, V70, N19: pp. 2580-2582.

Journal

112

1997

”Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V,” Wu, Y.-F.; Keller, S.; Kozodoy, P.; Keller, B.P.; Keller, and DenBaars, S.P.

IEEE Electron Device Letters, June 1997, V18, N6: pp. 290-292.

Conference Proceedings

113

1997

“Demonstration of InP-InGaAsP vertical grating-assisted codirectional coupler filters and receivers with tapered coupling coefficient distributions,” Yu-Heng Jan; Fish, G.A.; Coldren, L.A.; DenBaars, S.P.

IEEE Photonics Technology Letters, July 1997, V9, N7: pp. 994-996.

Journal

114

1997

“Integration of semiconductor laser amplifiers with sampled grating tunable     lasers for WDM applications,” San-Liang Lee; Heimbuch, M.E.; Cohen, D.A.; Coldren, L.A.; and DenBaars, S.P.

IEEE Journal of Selected Topics in Quantum Electronics, April 1997, V3, N2: pp. 615-27.

Journal

115

1997

“Substrate engineering of 1.55 mu m lasers,” Abraham, P.; Black, A.K.; Margalit, N.M.; Hawkins, A.R.; and DenBaars, S.P.

IEEE, 1997. pp. 455-458.

Conference Proceedings

116

1997

“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature,” Sun, C.-K.; Chiu, T.-L.; Keller, S.; Wang, G.; Minsky, M.; Bowrs, J.E.and DenBaars, S.P.

Applied Physics Letters, 28 July 1997, V71, N4: pp. 425-427.

Journal

117

1997

“Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm     output-power at 10 Ghz,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Nguyen, N.X.; Mishra, U.K. and DenBaars, S.P.

IEEE Electron Device Letters, Sept. 1997, V18, N9: pp. 438-440.

Journal

118

1997

"MOCVD of Group III-Nitrides," S. DenBaars and S. Keller, Chapter 2,     Gallium Nitride Materials and Devices, J. Pankove and T. Moustakas,

Academic Press, 1197, V50, pp. 11-37.

Journal

119

1997

"Reconfigurable Optical Properties in InGaN/GaN quantum wells,”  I. Shmagi, J. Muth, R. Kolbas, M.P. Mack, A.C. Abare, S. Keller, L. A. Coldren, U.K. Mishra, and S. DenBaars.

Appl. Physics Lett. V71 N1: pp. 1455.

Journal

120

1997

"Characteristics of InGaN MQW Blue Laser Diodes Grown by MOCVD," M.P. Mack, A. C. Abare, M. Aizorcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L.A. Coldren, and S.P. DenBaars.

MRS Internet Journal of Nitride Research, 1997, Volume 2, Article 41.

Journal

121

1997

"Electron Beam Pumped MQW InGaN/GaN Laser," V.I. Kozlovsky, A.B. Krysa, Y.K. Skyasyrsky, Y.M. Popov, A. Abare, M.P. Mack, S. Keller, U. K. Mishra, L. Coldren, S, DenBaars, M.D. Tiberi , T. George.

MRS Internet Journal of Nitride Research, Volume 2, Article Number 38.

Journal

122

1997

"Gallium-Nitride-Based Materials for Blue to Ultraviolet Optoelectronics Devices," S. DenBaars.

IEEE Special Issue on Optoelectronics, 1997.

Conference Proceedings

123.

1997

"MOCVD Growth and Properties of InGaN/Gan MQW," S. Keller, A. Abare, M. S. Minsky, D. H. Wu, M. P. Mack, J. S. Speck, E. Hu, L.A. Coldren, U.K. Mishra, and S. DenBaars.

Proceeding of the International Conference on SiC and Group III - Nitrides, 1997

Conference Proceedings

124.

1997

“Role of defect diffusion in the InP damage profile” D.G. Yu, C.H. Chen, A.L. Holmes Jr., S.P. DenBaars, E.L. Hu.

J. Vac. Sci. Technol. B V15, N6

Journal

125.

1997

“Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics” S.P. DenBaars

Intl. J. of High Speen Electronics and Systems, V8, N2: pp. 265-282

Journal

126.

1997

“Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy” E.J. Tarsa, B. Heying, X.H. Wu, P. Fini, S.P. DenBaars, J.S. Speck.

J. Appl. Phys. , V82, N11: pp. 5472-5479

Journal

127.

1997

“InP islands on InGaP/GaAs (001): island separation distributions” S. Varma, C.M. Reaves, V. Bressler-Hill, S.P. DenBaars, W.H. Weinberg

Science Surface, V393, N1-3: pp. 24-33

Journal

128.

1997

“Well-width dependent dtudies of InGaN-GaN single –quantum wells using time-resolved photoluminescence  techniques” Chi-Kuang Sun, S. Keller, Tien-Lung Chiu, G. Wang, M.S. Minsky, J.E. Bowers, S.P. DenBaars

IEEE Journal of Selected Topics in Quantum Electronics, V3, N3: pp. 731-738

Journal

129.

1997

“Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature” C.-K. Sun, T.-L. Chiu, S. Keller, G. Wang, M.S. Minsky, S.P. DenBaars, J.E. Bowers

Applied Physics Letters, V71, N4: pp. 425-427

Journal

130.

1997

“Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures”  Z. Dziuba, J. antoszewski, J.M. Dell, L. Faraone, P. Kozodoy, S. Keller, B. Keller, S.P. DenBaars, U.K. Mishra

J. Appl. Phys. , V82, N6: pp. 2996-3002

Journal

131.

1997

“Short-channel Al/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz.” Y.-F. Wu, B.P. Keller, P. Fini, J. Pusl, M. Le, N.X. Nguyen, C. Nguyen, D. Widman, S. Keller, S.P. DenBaars, U.K. Mishra

Electronics Letters, V33, N20: pp. 1742-1743

Journal

132.

1997

“Compact InGaAsP/InP 1x2 optical switch based on carrier induced supression of modal interference” G.A. Fish, L.A. Coldren, S.P. DenBaars

Electronics Letters, V33, N22: pp. 1898-1900

Journal

133.

1997 

“Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements” J.F. Muth, A.J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P. Keller, U.K. Mishra, S.P. DenBaars

Applied Physics Letters, V71, N18: pp. 2572-2574

Journal

134.

1997

“In/sub x/Ga/sub 1-x/N/Al/sub y/Ga/sub 1-y/N violet light emitting dioded with reflective p-contacts for high single sided light extraction” P.M. Menz, P. Kellawon, R. Van Roijen, P. Kozodoy, S. DenBaars

Electronics Letters, V33, N24: pp. 2066-2068

Journal

135.

1998

“High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells” S. Bidnyk, T.J. Schmidt, Y.H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

Applied Physics Letters V72, N13: pp. 1623-1625

Journal

136.

1998

“Spiral Growth of InGaN Nanoscale Islands on GaN” S. Keller, U.K. Mishra, S.P. DenBaars, W. Seifert.

Japanese J. Appl. Phys. V37 Part 2, No. 4B: pp. 431-434

Journal

137.

1998

“Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition” P.J. Hansen, Y.E. Strausser, A.N. Erickson, E.J. Tarsa, P. Kozodoy, E.G. Brazel, J.P. Ibbetson, U. Mishra, V. Narayanamurti, S.P. DenBaars, J.S. Speck

Applied Physics Letters V72, N 18: pp. 2247-2249

Journal

138.

1998

“Growth and properties of InGaN nanoscale islands on GaN” S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U. K. Mishra, S.P. DenBaars, W. Seifert

Journal of Crystal Growth V189, N190: pp. 29-32

Journal

139.

1998

“Dislocation generation in GaN heteroepitaxy” X.H. Wu, P. Fini, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck

Journal of Crystal Growth V189, N190: pp. 231-243

Journal

140.

1998

“MOVPE growth and characterization of Mg-doped GaN” P.Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra

Journal of Crystal Growth V195: pp. 265-269

Journal

141.

1998

“Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition” H. Marchand, J.P. Ibbetson, P.T. Fini, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

Journal of Crystal Growth V195: pp. 328-332

Journal

142.

1998

“Cleaved and Etched Facet Nitride Laser Diodes” A.C. Abare, M.P. Mack, M. Hansen, R.K. Sink, P. Kozodoy, S. Keller, J.S. Speck, J.E. Bowers, U.K. Mishra, L.A. Coldren, S.P. DenBaars

IEEE Journal of Selected Topics in Quantum Electronics V4, N3:  pp. 505-509

Journal

143.

1998

“Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays” R.D. Underwood, P. Kozodoy, S. Keller, S.P. DenBaars, U.K. Mishra

Applied Physics Letters V73, N3: pp. 405-407

Journal

144.

1998

“Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes” S. Chichibu, D.A. Cohen, M.P. Mack, A.C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J.E. Bowers, U.K. Mishra, L.A. Coldren, D.R. Clarke, S.P. DenBaars

Applied Physics Letters V73, N4: pp. 496-498

Journal

145.

1998

“Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells” T.J. Schmidt, Y-H Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

Applied Physics Letters V73, N5: pp. 560-562

Journal

146.

1998

“Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, M.S. Minsky, E. Hu, U.K. Mishra, S.P. DenBaars

Applied Physics Letters V73, N8: pp. 1128-1130

Journal

147.

1998

“The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor depostion” P. Fini, X. Wu, E.J. Tarsa, Y. Golan, V. Srikant, S. Keller, S.P. DenBaars, J.S. Speck

Japanese J. Appl. Phys. V37, N8: pp. 4460-4466

Journal

148.

1998

“Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition” H. Marchand, X.H. Wu, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra

Applied Physics Letters V73, N6: pp. 747-749

Journal

149.

1998

“Electrical characterization of GaN p-n junctions with and without threading dislocations”  P. Kozodoy, J.P. Ibbetson, H. Marchand, P.T. Fini, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra

Applied Physics Letters V73, N7: pp. 975-977

Journal

150.

1998

“Ridge Waveguide Sampled Grating DBR Lasers with 22-nm Quasi-Continuous Tuning Range” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren

IEEE Photonics Technology Letters V10, N9: pp. 1211-1213

Journal

151.

1998

“ ‘S-shaped’temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells”  Y-H Cho, G.H. Gainer, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

Applied Physics Letters V73, N10: pp. 1370-1372

Journal

152.

1998

“Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures” S.F. Chichibu, A.C. Abare, M.S. Minsky, S. Keller, S.B. Fleischer, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars

Applied Physics Letters V73, N14: pp. 2006-2008

Journal

153.

1998

“High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts” C-H Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E.L. Hu, S.P. DenBaars, U.K. Mishra, Y. Wu

Applied Physics Letters V73, N21: pp. 3147-3149

Journal

154.

1998

“Excitation energy-dependent optical characteristics of InGaN multiple quantum wells” Y-H Cho, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

Applied Physics Letters V73, N22: pp. 3181-3183

Journal

155.

1998

“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper

Applied Physics Letters V73, N26: pp.3887-3889

Journal

156.

1998

“Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile” G.A. Fish, B. Mason, S.P. DenBaars, L.A. Coldren

J. Crystal Growth, V186, N1-2: pp. 1-7

Journal

157.

1998

“Optical properies of GaAs confined in the pores of MCM-41” V. I. Srdanov, I. Alxneit, G.D. Stucky, C.M. Reaves, S.P. DenBaars

J. Physical Chemistry, V102, N18: pp. 3341-3344

Journal

158.

1998

“Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells” X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, J.S. Speck

Applied Physics Letters, V72, N6: pp. 692-694

Journal

159.

1998

“High Al-content AlGaN/GaN MODFET’s for ultrahigh performance” Y.-F Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, L.T. Kehias, S.P. DenBaars, U.K. Mishra

IEEE Electron Device Letters, V19, N2: pp. 50-53

Journal

160.

1998

“Suppressed modal interference switches with integrated curved amplifiers for scaleable photonic crossconnects” G.A. Fish, L.A. Coldren, S.P. DenBaars

IEEE Photonics Technology Letters, V10, N2: pp. 230-232

Journal

161.

1998

“Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence” M.S. Minsky, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S.P. DenBaars

Applied Physics Letters, V72, N9: pp. 1066-1068

Journal

162.

1998

“Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD” H. Marchand, J.P. Ibbetson, P.T. Fini, P. Kozodoy, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

MRS Internet Journal of Nitride Semiconductor Research, V3

Journal

163.

1998

“Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering” A. Munkholm, C. Thompson, C.M. Foster, J.A. Eastman, O. Auciello, G.B.Stephanson, P. Fini, S.P. DenBaars, J.S. Speck

Applied Physics Letters, V72, N23: pp. 2972-2974

Journal

164.

1998

“Catastrophic optical damage in GaInN multiple quantum wells” D.A. Cohen, T. Magalith, A.C. Abare, M.P. Mack, L.A. Coldren, S.P. DenBaars, D.R. Clarke

Applied Physics Letters, V72, N25: pp. 3267-3269

Journal

165.

1998

“Improvement of GaN-based laser diode facets by FIB polishing” M.P. Mack, G.D. Via, A.C. Abare, M. Hansen, P. Kozodoy, S. Keller, J.S. Speck, U.K. Mishra, L.A. Coldren, S.P. DenBaars

Electronics Letters, V34, N13: pp. 1315-1316

Journal

166.

1998

“Tunable sample-grating DBR lasers with integrated wavelength monitors” B. Mason, S.P. DenBaars, L.A. Coldren

IEEE Photonics Technology Letters, V10, N8: pp. 1085-1087

Journal

167

1998

“Compact, 4x4 InGaAsP-InP optical crossconnect with a scaleable architecture” G.A. Fish, B. Mason, L.A. Coldren, S.P. DenBaars

IEEE Photonics Technology Letters,  V10, N9: pages 1256-1258

Journal

168.

1998

“Pump-probe spectoscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN” T.J. Schmidt, Y.-H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

Applied Physics Letters, V73, N13: pp. 1892-1894

Journal

169.

1998

“Substrate reactivity and ‘controlled contamination’in metalorganic chemical vapor deposition of GaN on sapphire” Y. Golan, P. Fini, S.P. DenBaars, J.S. Speck

Japanese Journal of Applied Physics, V37, Pt.1, N9A: pp. 57-65

Journal

170.

1998

“A first look at AlGaN/GaN HBTs” L. McCarthy, P. Kozodoy, M. Rodwell, S.P. DenBaars, U.K. Mishra

Compound Semiconductor Magazine, V4, N8

Magazine

171.

1998

“Optical properties of InGaN/GaN quantum wells with Si-doped barriers” M. Minsky, S. Chichibu, S.B. Fleisher, A.C. Abare, J.E. Bowers, E.L. Hu, S. Keller, U.K. Mishra, S.P. DenBaars

Japanese Journal of Applied Physics, V37, Pt. 2 ,N11B: pp. 1362-1364

Journal

172.

1998

“Stimulated emission characteristics of InGaN/GaN multiple quantum wells:Excitation length and excitation density”

Applied Physics Letters, V73, N25: pp. 3689-3691

Journal

173.

1998

“Measurement of gain current relations for InGaN multiple quantum wells” A.C. Abare, M.P. Mack, M. Hansen, J.S. Speck, L.A. Coldren, S.P. DenBaars, G.A. Meyer, S.L. Lehew, G.A. Cooper

Applied Physics Letters, V73, N26: pp. 3887-3889

Journal

174.

1998

“Gallium nitride based materials and their application for light emitting devices” S. Keller, S.P. DenBaars

Current Opinion in Solid State & Materials Science, V3, N1: pp. 45-50

Journal

174a.

1998

Chapter 2 pp.11-35 “Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides”S. P. DenBaars, S. Keller

J. I. Pankove, T.D. Moustakas Semiconductors and Semimetals, V50: Gallium Nitride (GaN) I

Academic Press: San Diego

Book Chapter

175.

1999

“Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN” G.B. Stephenson, J.A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P.H. Fuoss, P. Fini, S.P. DenBaars, J.S. Speck

MRS Bulletin/Jan.: pp. 21-25

Journal

176.

1999

“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleischer, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, S.P. DenBaars

Applied Physics Letters V74, N10: pp. 1460-1462

Journal

177.

1999

“Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride” S.J. Rosner, G. Girolami, H. Marchand, P.T. Fini, J.P. Ibbetson, L. Zhao, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck

Applied Physics Letters V74, N14: pp. 2035-2037

Journal

178.

1999

“Dislocation mediated surface morphology of GaN” B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, J.S. Speck

Journal of Applied Physics V85, N9: pp. 6470-6476

Journal

179.

1999

“Widely Tunable Sampled Grating DBR Laser with Integrated Electroabsorption Modulator” B. Mason, G.A. Fish, S.P. DenBaars, L.A. Coldren

IEEE Photonics Technology Letters V11, N6: pp. 638-640

Journal

180.

1999

“Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells’  S.Fleisher, S. Keller, A. Abare, L. Coldren, U. Mishra, S. DenBaars, J. Bowers

Ultrafast Electonics and Optoelectronics:

Snow Mass, CO April 12-16

Conference Proceedings

181.

1999

“Near-field scanning optical microscopy of indium gallium nitride multple-quantum-well laser diodes” D. Young, M. Mack, A. Abare, M. Hansen, L. Coldren, S. DenBaars, E. Hu , D. Awschalom

Applied Physics Letters; V74, N16

Journal

182.

1999

“Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings” A. Abare, M. hanson, J. Speck, L. coldren, s. DenBaars

Device Research Conferecne, paper no. VII.B-6; Santa Barbara, CA

Conferece Proceedings

183.

1999

“Indium tin oxide contacts to gallium nitride optoelectronic devices” T. Margalith, O. Buchinsky, D. Cohen, A. Abare, M. Hansen, S. DenBaars, L. Coldren

Applied Phyics Letters; V7, N26

Journal

184.

1999

“Improved characterstics of InGaN multi-quantum well laser diodes grown on laterally overgrown GaN on sapphire” M, Hanson, P. Fini, L. Zhao, A. Abare, J. Speck, L. coldren, S. DenBaars

Elecronic Materials Conf.; Santa Barbara, CA – post deadline paper Session R, Electronic Materials Conf., June 30 – July 2, 1999

Conference Proceeding

185.

1999

High-performance (Al,Ga)N-based solar-blind ultraviolet p-I-n detectors on laterally epitaxially overgrown GaN, G. Parish, S. Keller, P. Kozodoy, J.P. Ibbitson, H. Marchand, P.T. Fini, S.B. Fleischer, E.J. Tarsa , S.P. DenBaars, and U.K. Mishra.

Applied Phyics Letters; V75, N2: pp. 247-249.

Journal

186.

1999

High-quality coalescense of laterally overgrown GaN stripes on GaN/sapphire seed layers, P. Fini, L. Zhao, B. Moran, M. Hansen, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U. K. Mishra and J.S. Speck.

Applied Phyics Letters; V75, N12: pp. 1706-1708.

Journal

187.

1999

Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings” A.C. Abare, M. Hansen, J. S. Speck, S. P. DenBaars and L. A. Coldren.

Electronics Letters, Sept. 2, 1999, V35, N18: pp. 205-206.

Journal

188.

1999

“Effect of AlGaN/GaN strained layer superlattice period of InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars

Phys. Stat. Sol., V176: pp. 59-62

Journal

189.

1999

“Optical Spectroscopy of InGaN/GaN quantum wells” E. Berkowiz, D. Gershoni, G. Bahir, a. Abare, S DenBaars, L. Coldren

Phys. Stat. Sol. 216,291

Journal

190.

1999

“Embedded delelctric grating distributed feedback nitride laser diode” A. Abare, M. Hansen, J. speck, L. coldren, S. DenBaars

International conference on nitride Semiconductros, Paper no. WePO61: Montpeliier, France

Conference Proceeding

191.

1999

“Photoresponse and physical properties of photoconductor and photovoltaic GaN based UV detectors” V. Garber, G. Bahit, J. Salzman, A. Abare, S. DenBaars, L. coldren

International conference on Niride Semiconductoes: montpellier, France- paper no. WePO35

Conference Proceeding

192.

1999

“Monolithic integration of a widely tunable laser and an electro-absorptoin modulator” B. Mason, G. Fish, S. DenBaars, L. Coldren

Integrated Photonic Research 99’; Santa Barbara, CA-paper no. RME2

Conference Proceeding

193.

1999

“Compact, 1.55 µm spot-size converters for InP based photonic integrated circuits” G. Fish, B. mason, L. coldren, s. DenBaars

Integrated Photonics Research Conference ’99; santa Barbara, CA-paper no. RWD4

Conference Proceedings

194.

1999

“Monolithic InP Optical Crossconnects: 4x4 and beyond” G. Fish, B. Mason, L. coldren, S. DenBaars

Photonics in Switching; Santa Barbara, CA-paper no. JWB2

Conference Proceedings

195.

1999

“Transparent contact to p-GaN: indium tin oxide/titanium nitride” O. Buchinsky, T. Margalith, D. Cohen, A. Abare, S. DenBaars, L. coldren

LEOs Summer Topicals; San Diego, CA-paper no. FBI 3

Conference Proceedings

196.

1999

“Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells” C. Sun, J. lLiang, C. Stanton, A. Abare, L. coldren, S. DenBaars

Applied Physics Letters; V75:N9

Journal

197.

1999

“Optical Crossbar Switches on InP” G. Fish, B. Mason, L. coldren, S. DenBaars

LEOS ’99; San Francisco, CA- paper no. WC1

Conference Proceeding

198.

1999

“Improved Characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao, A. Abare, L. Coldren, J. Speck, S. DenBaars

Materials Research Society Meeting; Boston, MA-paper no. W1 3

Journal

199.

1999

“Optical properties of InGaN quantum wells” S.F. Chichibu, A.C. Abare, M.P. Mack,M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleisher, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Soto, S. Nakamura

Materials Science and Engineering B59, pp. 298-306

Journal

200.

1999

“High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: influence of Si-Doping concentration” Y.-H. Cho, F. Fedler, R.J. Hauenstein, G.H. Park, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

Journal of Applied Physics, V85, N5: pp. 3006-3008

Journal

201.

1999

“Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth” S.F. Chichibu, H. Marchand, M.S. Minsky, S. Keller, P.T. Fini, J.P. Ibbetson, S.B. Fleisher, J.S. Speck, S.P. DenBaars, T. Deguchi, T. Soto, S. Nakamura

Applied Physics Letters, V74, N10: pp. 1460-1462

Journal

202.

1999

“Low-temperature scanning tunneling microscope-induced luminescsence of an InGaN/GaN multiquantum well” S. Evoy, C.K. Harnett, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars

Applied Physics Letters, V74, N10: pp. 1457-1459

Journal

203.

1999

“Structural and optical properties of GaN laterally overgrown on Si(111) by metal organic vapor deposition using an AlNbuffer layer” H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, P.T. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

MRS Internet Journal, V4S1

Journal

204.

1999

“Study of temperature effects on loss mechanisms in 1.55m laser diodes with In/sub 0.81/Ga/sub 0.19/P electron stopper layer” P. Abraham, J. Piprek, S.P. DenBaars, J.E. Bowers

Semiconductor Science and Technology, V14, N5: pp. 419-424

Journal

205.

1999

“Observation of growth modes during metal-organic chemical vapor deposition of GaN” G.B. Stephenson, J.A. Eastman, C. Thompson, O. Auciello, L.J. Thompson, A, Munkholm, P. Fini, S.P. DenBaars, J.S. Speck

Applied Physics Letters, V74, N22: pp. 3326-3328

Journal

206.

1999

“Ultrafast electron dynamics study of GaN” C.-K. Sun, Y.-L. Huang, S. Keller, U.K. Mishra, S.P. DenBaars

Physical Review B, V59, N21: pp. 13535-13538

Journal

207.

1999

“High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S, Speck

Applied Physics Letters, V74 N23: pp. 3528-3530

Journal

208.

1999

“Enhanced Mg doping efficiency in Al/sub 0.2/Ga/sub 0.8/N/GaN superlattices” P. Kozodoy, M. Hansen, S.P. DenBaars, U.K. Mishra

Applied Physics Letters, V74, N24: pp. 3681-3683

Journal

209.

1999

“AlGaN/GaN heterojunction bipolar transistor” L.S. McCarthy, P. Kozodoy, M.J. Rodwell, S.P. DenBaars, U.K. Mishra

IEEE Electron Device Letters, V20, N6: pp. 277-279

Journal

210.

1999

“AlGaN/GaN HBTs using regrown emitter” J.B. Limb, L. McCarthy, P. Kozodoy, H. Xing, J. Ibbetson, Y. Smorchkova, S.P. DenBaars, U.K. Mishra

Electronics Letters, V35, N19:

pp. 1671-1673

Journal

211.

1999

“Surface structure of GaN(0001) in the chemical vapor deposition environment” A. Munkholm, G.B. Stephenson, J.A. Eastman, C. Thompson, P. Fini, J.S. Speck, O. Auciello., P.H. Fuoss, S.P. DenBaars

Physical Review Letters, V83, N4: pp. 741-744

Journal

212.

1999

“Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies” H. Jiang, M. Minsky, S. Keller, E. Hu, J. Singh, S.P. DenBaars

IEEE Journal of Quantum Electronics, V35, N10: pp. 1483-1490

Journal

213.

1999

“Coupling of InGaN quantum-well photoluminescence to silver surface plasmons” I. Gontijo, M. Boroditsky, E. Yablonovich, S. Keller, U.K. Mishra, S.P. DenBaars

Physical Review B, V60, N16: pp. 11564-11567

Journal

214.

1999

“Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, C.R. Elsass, J.P. Ibbetson, R. Ventury, B. Heying, P. Fini, E. Haus, S.P. DenBaars, J.S. Speck, U.K. Mishra

Journal of Applied Physics, V86, N8: pp. 4520-4526

Journal

215.

1999

“Polarization-enhanced Mg doping of AlGaN/GaN superlattices” P. Kozodoy, Y.P. Smorchkova, M. Hansen., H. Xing, S.P. DenBaars, U.K. Mishra, A.W. Saxler, R. Perrin, W.C. Mitchel

Applied Physics Letters, V75, N16: pp. 2444-2446

Journal

216.

1999

“Structural and optical characteristics of In/sub x/Ga/sub 1-x/N/GaN multiple quantum wells with different In compositions” Y.-H. Kwon, G.H. Gainer, S. Bidnyk, Y.H. Cho, J.J. Song, M. Hansen, S.P. DenBaars

Applied Physics Letters, V75, N17: pp. 2545-2547

Journal

217.

1999

“GaN-based FETs for Microwave Power Amplification” Y.F. Wu, B.P. Keller, S. Keller, J.J. Xu, B.J. Thibeault, S.P. DenBaars, U.K. Mishra

IEICE Trans. Electron., VE82-C N11: pp. 1895-1905

Journal

218.

1999

“Femtosecond Z-scan measurement of GaN”   Y.-L. Huang, C.-K. Sun, J.-C Liang, S. Keller, M.P. Mack, U.K. Mishra, S.P. DenBaars

Applied Physics Letters, V75, N22: pp. 3524-3526

Journal

219.

1999

“Large interband second-order susceptibilities in In/sub x/Ga/sub 1-x/N/GaN quantum wells” H.Schmidt, A.C, Abare, J.E.Bowers, S.P. DenBaars, A. Imamoglu,

Applied Physics Letters, V75, N23: pp. 3611-3613

Journal

220.

1999

“Thermal conductivity of lateral epitaxial overgrown GaN films” C.-Y Luo, H. Marchand, D.R. Clarke, S.P. DenBaars

Applied Physics Letters, V75, N26: pp. 4151-4153

Journal

221.

1999

“Thermal annealing of InGaN/GaN strained-layer quantum wells” M.C.-Y. Chan, K.-O. Tsang, E.H. Li, S.P. DenBaars

MRS Internet Journal, V4S1, G6.25

Journal

222.

1999

“Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process” H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

MRS Internet Journal, V4S1, G4.5

Journal

223.

1999

“Spectroscopic studies in InGaN quantum wells” S.F. Chichibu, T. Sota, K. Wada., S.P. DenBaars, S. Nakamura

MRS Internet Journal, V4S1, G2.7

Journal

224.

1999

“Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells” Y.-H. Cho, B.D. Little, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

MRS Internet Journal, V4S1, G2.4

Journal

225.

1999

“Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells” Y.-H. Cho, T.J. Schmidt, S. Bidnyk, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

MRS Internet Journal,V4S1, G6.44

Journal

226.

1999

“Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells” T.J. Schmidt, S. Bidnyk, Y.-H. Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

MRS Internet Journal, V4S1, G6.54

Journal

227.

1999

“Scanning tunneling microscope-induced luminescence of GaN at threading dislocations” S. Evoy, H.G. Craighead, S. Keller, U.K. Mishra, S.P. DenBaars

Journal of Vacuum Science & Technology B, V17, N1: pp. 29-32

Journal

228.

2000

“Sims investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlXGa 1-X N,”  G. Parish, S. Keller, S.P. DenBaars and U.K. Mishra

Journal of Electronic Materials, V29, N1, pp. 15-20.

Journal

229.

2000

“Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray defraction” P. Fini, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J.S. Speck

Journal of Crystal Growth, V209: pp. 581-590

Journal

230.

2000

“Characterization of an AlGaN/GaN two-dimensional electron gas structure” A. Saxler, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck

Journal of Applied Physics, V87, N1: pp. 369-374

Journal

231.

2000

“Depletion region effects in Mg-doped GaN” P. Kozodoy, S.P. DenBaars, U.K. Mishra

Journal of Applied Physics, V87, N2: pp. 770-775

Journal

232.

2000

“Improved characteristics of InGaN multiple –quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire” M. Hansen, P. Fini, L. Zhao. A.C. Abare, L.A. Coldren, J.S. Speck, S.P. DenBaars

Applied Physics Letters, V76, N5: pp. 529-531

Journal

233.

2000

“Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy” I.P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

Applied Physics Letters, V76, N6: pp. 718-720

Journal

234.

2000

“Heavy doping effects in Mg-doped GaN” P. Kozodoy, H. Xing, S.P. DenBaars, U.K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W.C. Mitchel

Journal of Applied Physics, V87, N4: pp. 1832-1835

Journal

235.

2000

“Epitaxially-grown GaN junction field effect transistors” L. Zhang, L.F. Lester, A.G. Baca, R.J. Shul, P.C. Chang, C.G. Willison, U.K. Mishra, S.P. DenBaars, J.C. Zolper

IEEE Transactions on Electron Devices, V47, N3: pp. 507-511

Journal

236.

2000

“Linear and nonlinear optical properties of In/sub x/Ga/sub 1-x/N/GaN heterostructures” Y.H. Cho, T.J. Schmidt, S. Bidnyk, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars

Physical Review B, V61, N11: pp. 7571-7588

Journal

237.

2000

“Distributed feedback laser diodes employing embedded dielectric gratings located above the active region” A.C. Abare, S.P. DenBaars, L.A. Coldren

IEICE Trans. Electron, VE83-C, N4: pp. 560-563

Journal

238.

2000

“Transient processes in AlGaN/GaN heterostructures field effect transistors” S.L. Rumyantsev, M.S. Shur, R. Gaska, X. Hu, A. Khan, G. Simin, J. Yang, N. Zhang, S.P. DenBaars, U.K. Mishra

Electronics Letters, V36, N8: pp. 757-759

Journal

239.

2000

“Measured and calculated radiative lifetime and optical absorption of In/sub x/Ga/sub 1-x/ N/GaN quantum structures” E. Berkowitz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A.C, Abare, S.P. DenBaars, L.A. Coldren

Physical Review B, V61, N16: pp. 10994-11008

Journal

240.

2000

“High voltage operation (>80V) of GaN bipolar junction transistors with low leakage” J.B. Limb, H. Xing, B. Moran, L. McCarthy, S.P. DenBaars, U.K. Mishra 

Applied Physics Letters, V76, N17: pp. 2457-2459

Journal

241.

2000

“Charge control and mobility in AlGaN/GaN transistors: experimental and theoretical studies” Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, J. Singh

Journal of Applied Physics, V87, N11: pp. 7981-7987

Journal

242.

2000

“Channeling as a mechanism for dry etch damage in GaN” E.D. Haberer, C.-H. Chen, A. Abare, M. Hansen, S.P. DenBaars, L.A. Coldren, U.K. Mishra, E.L. Hu

Applied Physics Letters, V76, N26: pp. 3941-3943

Journal

243.

2000

“In Situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN” P. Fini, A. Munkholm, C. Thompson, G.B. Stephenson, J.A. Eastman, M.V. R. Murty, O. Auciello, L. Zhao, S.P. DenBaars, J.S. Speck

Applied Physics Letters, V76, N26: pp. 3893-3895

Journal

244.

2000

“Ultrafast optical characterization of carrier capture times in In/sub x/Ga/sub 1-x/ N multiple quantum wells” U. Ozgur, M.J. Bergmann, H.C. Casey, Jr., H.O. Everitt, A.C. Abare, S. Keller, S.P. DenBaars

Applied Physics Letters, V77, N1: pp. 109-111

Journal

245.

2000

“Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes” M. Hansen, A. Abare, P. Kozodoy, T. Katona, M. Craven, J. Speck, U. Mishra, L. Coldren, S. DenBaars

Mat. Res. Soc. Symp., V595, W1.4.1-W1.4.6

Journal

246.

2000

“Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes” A. Hierro, D. Kwan, S.A. Ringel, M. Hansen, J.S. Speck, U.K. Mishra, S.P. DenBaars

Applied Physics Letters, V76, N21: pp. 3064-3066

Journal

247.

2000

“Transition between the 1x1 and (√3x2√3)R30 surface structures of GaN in the vapor-phase environment” A. Munkholm, C. Thompson, G. B. Stephenson, J.A. Eastman, O. Auciello, P. Fini, J.S. Speck, S.P. DenBaars

Physica B, V283: pp. 217-222

Journal

247a.

2000

Chapter 1 pp. 1-25 “Basic Physics & Materials Technology of GaN LEDs and LDs”Steven P. DenBaars

S. Nakamura, S.F. Chicibu Introduction to Nitride SemiconductorBlue Lasers and Light Emitting Diodes.

Taylor & Francis: London

Book Chapter

248.

2000

“Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors” J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBaars, J.S. Speck, U.K. Mishra

Applied Physics Letters, V77, N2: pp. 250-252

Journal

249.

2000

“In situ studies of the effect of silicon on GaN growth modes” A. Munkholm, G. B. Stephenson, J. A. Eastman, O. Auciello, M. V. Ramana Murty, C. Thompson, P. Fini, J. S. Speck, S. P. DenBaars

Journal of Crystal Growth, V.221, pp. 98-105

Journal

250.

2000

“Layer by layer growth of GaN induced by silicon” A. Munkholm, C. Thompson, M. V. Ramana Murty, J. A. Eastman, O. Auciello, G. B. Stephenson, P. Fini, S. P. DenBaars, J. S. Speck

Applied Physics Letters, V77 N11, pp. 1626-1628

Journal

251.

2000

“Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy” B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, J. S. Speck

Applied Physics Letters, V77 N18, pp. 2885-2887

Journal

252.

2000

“Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy” C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, James S. Speck, A. Saxler, S. Elhamri, W. C. Mitchel

Japanese Journal of Applied Physics, V39 N10B (part 2), pp. L1023-L1025

Journal

253.

2000

“Dislocation reduction in GaN films through selective island growth of InGaN” S. Keller, G. Parish, J. S. Speck, S. P. DenBaars, U. K. Mishra

Applied Physics Letters, V77 N17, pp. 2665-2667

Journal

254.

2000

“Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates”

B. Moran, M. Hansen, M. D. Craven, J. S. Speck, S. P. DenBaars

Journal of Crystal Growth, V221, pp. 301-304

Journal

255.

2000

“Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure”  S. Elhamri, A. Saxler, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck

Journal of Applied Physics, V88, N11, pp. 6583-6588

Journal

256.

2001

“Impact of internal electric field and localization effect on quantum well excitons in AlGaN/GaN/InGaN light emitting diodes”  S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, S. Nakamura

Physica Status Solidi A, V183, pp. 91-98

Journal

257.

2001

“Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells”  G. Vaschenko, D. Patel, C. S. Menoni, S. Keller, U. K. Mishra, S. P. DenBaars

Applied Physics Letters, V78, N5, pp. 640-642

Journal

258.

2001

“Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells”  Y.-C. Huang, J.-C. Liang, C.-K. Sun, A. Abare, S. P. DenBaars