Publications | Solid State Lighting & Energy Electronics Center

No.	Year	Title and Authors	Publisher	Category
1	1986	"Homogeneous and Heterogeneous Thermal Decomposition Rates of Trimethylgallium and Arsine and Their Relevance to the Growth of GaAs by MOCVD", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, A.D. Danner and H.C. Lee	J. Crystal Growth, 77, 186	Refereed Conference Proceedings
2	1987	"The Effects of Hydrodynamics Interrupted Growth and Growth Temperature on the Interface Properties of AlGaAs/GaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition", S.P. DenBaars, H.C. Lee, A. Hariz, and P.D. Dapkus	Technical Program of the Electronic Materials Conference, paper N7, 50	Refereed Conference Proceedings
3	1987	"GaAs/AlGaAs Quantum Well Lasers with Active Regions Grown by Atomic Layer Epitaxy",S.P. DenBaars, C.A. Hariz, and P.D. Dapkus	Appl. Phys. Lett. 51, 1530	Journal
4	1987	"The Growth of AlGaAs/GaAs Heterostructures by Atomic Layer Epitaxy" Epitaxy of Semiconductor Layered Structures, S.P. DenBaars, A. Hariz, C.A. Beyler, B.Y. Maa, Q. Chen, and P.D. Dapkus	Mat. Res. Soc. Proceedings, Vol. 102, p. 527, Boston, MA	Refereed Conference Proceedings
5	1987	"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", S.P. DenBaars, P.D. Dapkus, Q. Chen, W.G. Jeong, and B.Y. Maa	Materials Research Society, Symposium C, Epitaxy of Semiconductor Layered Structures, (Paper C7.9), Boston, MA, December	Refereed Conference Proceedings
6	1987	"AlGaAs/GaAs Quantum Wells Grown by Atomic Layer Epitaxy", S.P. DenBaars, C.A. Beyler,A. Hariz, and P.D. Dapkus	Technical Digest Third Biennial OMVPE Workshop, (Paper A2), Brewster, MA, September	Conference Proceedings
7	1988	"Atomic Layer Epitaxy for the Growth of Heterostructure Devices", S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz, and K. Dzurko	Crystal Growth, 93, 195	Journal
8	1988	"Thermal and Laser Assisted Atomic Layer Epitaxy of Compound Semiconductors", S.P. DenBaars, P.D. Dapkus, J.S. Osinski, M. Zandian, C.A. Beyler, and K.M. Dzurko	Int. Symp. GaAs and Related Compounds, Atlanta, GA 1988, Inst. Phys. Conf. Ser. No. 96, 89	Refereed Conference Proceedings
9	1989	"Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine", S.P. DenBaars, B.Y. Maa, P.D. Dapkus, and A. Melas	J. Electrochem. Soc., 136, No. 7, 2067	Journal
10	1989	"Minority Carrier Lifetimes in Undoped AlGaAs/GaAs Multiple Quantum Wells", A. Hariz, P.D. Dapkus, H.C. Lee, E.P. Menu, and S.P. DenBaars	Appl. Phys. Lett., 54, 635	Journal
11	1989	"The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy", P.D. Dapkus, S.P. DenBaars, Q. Chen, W.G. Jeong, and B.Y. Maa	Prog. Crystal Growth and Charact., 19, 137	Journal
12	1989	"Atomic Layer Epitaxy of Compound Semiconductors with Metalorganic Precursors", S. P. DenBaars and P.D. Dapkus	J. Crystal Growth, 98, 195	Journal
13	1990	"Atmospheric Atomic Layer Epitaxy", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars,	Acta Polytechnica Scandivica, Ch. 195, 39	Journal
14	1991	"Atmospheric Atomic Layer Epitaxy: Mechanisms and Applications", P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, and S.P. DenBaars	J. Crystal Growth, 107, 73	Journal
15	1992	"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550nm) Lightwaves", D.B. Young, D.I. Babic, S.P. DenBaars, and L.A. Coldren	Electronic Lett. 28, No.20, 1873	Journal
16	1992	"Growth of High Quality InxGa1-xAs/InP Quantum Wells with Tertiarybutylarsine and Tertiarybutylphosphine", M. P. Mack, C. M. Reaves, P. J. Corvini, S.P. DenBaars, M. S. Leonard, M. Mondry and J. L. Merz	Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper J2, p.39	Conference Proceedings
17	1992	"Fe-Doped Semi-Insulating InP Grown by Atmospheric Pressure MOCVD Using Tertiarybutylphosphine, Trimethylindium, and Ferrocene", P.J. Corvini, M. Hashemi, S.P. DenBaars, J.E. Bowers	Technical Program of the Electronic Materials Conference, J. Electronic Materials, 21,No.7, Paper P4, p.54	Conference Proceedings
18	1992	"Wide tunability and large mode-suppression in a multisection semiconductor laser using sampled gratings", V.J. Jayaraman, L.A. Coldren, S.P. DenBaars, A. Mather, and P.D. Dapkus	Proceedings of the Integrated Photonics Research Conference, New Orleans, LA, WF-1, pp. 54-55	Conference Proceedings
19	1992	"High Performance Heterojunction InGaAs/InP JFET grown by MOCVD using Tertiarybutylarsine and Tertiarybutylphosphine", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	P7, IEDM Tech. Digest, 311	Journal
20	1992	"Visible Light Emitting Diodes: Materials Growth and Properties" S.P. DenBaars,	Solid State Luminescence-Theory, Materials & Devices, Chapter 8, pp. 263-291. A.H. Kitai, editor ( Chapman and Hall, London, England )	Book Chapter
21	1993	"High Speed p+ GaInAs-n-InP Heterojunction JFETs (HJFETs) grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	IEEE Electron. Device Lett. 14, No. 2., 60	Journal
22	1993	"High Speed Heterojunction JFETs grown by Non-Hydride MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	Proceedings ofUltrafast electronics and Optoelectronics Conference	Conference Proceedings
23	1993	"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine and Tertiarybutylphosphine", M. E. Heimbuch, A.L. Holmes, S.P. DenBaars, L.A. Coldren, and J.E. Bowers	Electronics Letters, 29, No. 4, pp.340-341	Journal
24	1993	"Novel High Power Heterojunction JFETs (HJFETs) Grown by MOCVD", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 375-378, IEEE Society, Piscataway, New Jersey	Conference Proceedings
25	1993	"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid Group V Sources", M. E. Heimbuch A.L. Holmes, Jr., S.P. DenBaars, L.A. Coldren, and J.E. Bowers	IEEE Proceedings of the 5th Intl. InP and Related Materials Conf.,Paris, France, ISBN 0-7803-0993-6, pp. 239-242, IEEE Society, Piscataway, New Jersey	Conference Proceedings
26	1993	"Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs(11) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnatmurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. DenBaars	Mat. Research Soc. Proceedings, San Francisco, April	Refereed Conference Proceedings
27	1993	"35 GHz fmax InP JFET Grown by MOCVD Using Tertiarybutylphosphine (TBP)", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, and U.K. Mishra	Electronics Lett. 29, No. 4, pp.372-374	Journal
28	1993	"Low Threshold Strained InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP", S.P. DenBaars, A.L.Holmes, JR., M. E. Heimbuch, and C. M. Reaves	Late News paper, Extended Abstracts of European Workshop on MOVPE-V, pp. E-19-21, Malmo, Sweden, June	Conference Proceedings
29	1993	"Strained InGaAsP Single Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", A.L. Holmes, M.E. Heimbuch, and S.P. DenBaars	Appl. Physics Lettters, V63, N25:3417-3419, December	Journal
30	1993	"Direct Formation of Quantum-sized Dots from Uniform Coherent Islands of InGaAs on GaAs Surfaces", D.Leonard, M. Krishnamurty, C.M. Reaves, P.M. Petroff, and S.P. DenBaars	, V63, N23:3203-3205, December	Journal
33	1993	"Low Threshold 1.5 Mu-M Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", M. E. Heimbuch, A. L. Holmes, M. P. Mack, S. P. DenBaars	Electronics Letters, V29, N4: 340-342	Journal
34	1993	"35 GHz F (Max) InP JFet Grown by Non-Hydride MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra	Electronics Letters, V29, N4: 372-373	Journal
35	1993	"High-Speed P+ GaInAs-N InP Heterojunction JFets (HJFETS) Grown by MOCVD", M. M. Hashemi, J. B. Shealy, S. P. DenBaars, U. K. Mishra	IEEE Electron Device Letters, V14, N2: 60-62	Journal
36	1993	"Epitaxial AlGaAs/AlAs Distributed Bragg Reflectors for Green (550 NM) Lightwaves", D. B. Young, D. I. Babic, S. P. DenBaars, L. A. Coldren	Electronics Letters, V28, N20: 1873-1874	Journal
37	1993	"Photoluminescence Studies of a Quantum Well Modulated by Facetting on GaAs(110) Surfaces", S. Tomiya, C.M. Reaves, M. Krishnamurthy, M. Wassermeier, D. Bimberg, P.M. Petroff, and S.P. DenBaars	Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D.W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society. Symposium Proceedings Vol. 312)	Conference Proceedings
38	1994	"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.5 5µm InxGa1-xAsInP Quantum Well Lasers", M. Heimbuch, A.L. Holmes, C.M. Reaves, S.P. DenBaars, and L.A. Coldren	Journal of Electronic Materials, V23, N2:87-91, February	Journal
39	1994	"High Performance InP JFET grown by Metalorganic Chemical Vapor Deposition using Tertiarybutylphosphine (TBP) as the Phosphorous Source", M.M. Hashemi, J.B. Shealy, S.P. DenBaars, U.K. Mishra	Journal of Electronic Materials, V23, N2:233-237, February	Journal
40	1994	"Formation of Coherently Strained Self-Assembled InP Quantum Islands on InGaP/GaAs", S. P. DenBaars, C. M. Reaves, V. Bresslerhill, S. Varma	Journal of Crystal Growth, V145, N1-4: 721-727	Journal
41	1994	"Flow Modulation Epitaxy of GaXIn(1-X)As/AlAs Heterostructures on InP for Resonant Tunneling Diodes”, B.P. Keller, J.C. Yen, A.L.Homes, S.P.DenBaars, U.K.Mishra	Applied Surface Science, V82-3, 126-131	Journal
42	1994	"Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room-Temperature Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, E. Hu, S. P. DenBaars	Journal of Vacuum Science and Technology B, V12, N6: 3704-3707	Journal
43	1994	"MBE and MOCVD Growth and Properties of Self-Assembling Quantum Dot Arrays in III-V Semiconductor Structures", P. M. Petroff, S. P. DenBaars	Superlattices and Microstructures, V15, N1: 15-21	Journal
44	1994	"GaXIn1-XAs/AlAs Resonant Tunneling Diodes Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", B. P. Keller, J. C. Yen, S. P. DenBaars, U. K. Mishra	Applied Physics Letters, V65, N17: 2159-2161	Journal
45	1994	"Widely Tunable Continuous-Wave InGaAsP/LnP Sampled Grating Lasers", V. Jayaraman, M. E. Heimbuch, L. A. Coldren, S. P. DenBaars	Electronics Letters, V30, N18: 1492-1494.	Journal
46	1994	"Field-Induced Guide Antiguide Modulators on InGaAsP/InP", S. L. Lee, M. E. Heimbuch, C. J. Mahon, N. Dagli	Electronics Letters, V30, N12:954-956	Journal
47	1994	"Passivation of InGaAs/InP Surface Quantum Wells by Ion-Gun Hydrogenation", Y. L. Chang, I. H. Tan, C. Reaves, J. Merz, S. P. DenBaars	Applied Physics Letters, V64, N20: 2658-2660	Journal
48	1994	"Continuous-Wave Operation of Sampled Grating Tunable Lasers with 10mwatt Output Power, >60nm Tuning, and Monotonic Tuning CVharacteristics", V.J. Jayaraman, M.E. Heimbuch, L.A. Coldren, and S.P. DenBaars	IEEE Proceedings of the 6th Intl. InP and Related Materials Conf	Conference Proceedings
49	1994	"Compressively Strained 1.55µm InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown with TBA and TBP", S.P. DenBaars, A.L. Holmes, M.H. Heimbuch	SPIE Proceedings of the Optoelectronics/Laser Conf.	Conference Proceedings
50	1994	"Coupling of Terahertz Radiation with Wispering Gallery Mode Microdisk Lasers", K.B. Nordstrom, S.J. Allen, M.E. Heimbuch, S.P. DenBaars, A.F.J. Levi	Proceedings of the Conf on Laser and Electro-Optics	Conference Proceedings
51	1994	"GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes", C.M. Reaves, J.C. Yen, N.A. Cevallos, U.K. Mishra, and S.P. DenBaars	Compound Semiconductor Epitaxy, edited by C.W. Tu, L.A. Kolodziejski, and V.R. McCrary (Materials Research Society Symposium Proceedings Vol. 320), 147-152	Conference Proceedings
52	1995	"Characterization of MOCVD-Grown InP on InGaP/GaAs", C. M. Reaves, V. Bresslerhill, S. Varma, W. H. Weinburg, S. P. DenBaars	Surface Science, V326, N3: 209-217	Journal
53	1995	"Indium Phosphide (INP) Based Heterostructure Materials and Devices Grown by MOCVD Using Tertiarybutylarsine (TBA) Tertiarybutylphosphine (TBP)", S. P. DenBaars, A. L. Holmes, M. E. Heimbuch, V. J. Jayaraman	Journal of the Korean Physical Society, V28, S: S37-S42.	Journal
54	1995	"Low-Temperature PD Bonding of III-V Semiconductors", I. H. Tan, C. Reaves, A. L. Holmes, E. L. Hu, S. P. DenBaars	Electronics Letters, V31, N7: 588-589	Journal
55	1995	"Effect of Atmospheric Pressure MOCVD Growth Conditions on UV Band-Edge Photoluminescence in GAn Thin Films", B. P. Keller, S. Keller, D. Kapolnek, M. Kato, S. P. DenBaars	Electronic Letters, V31, N13: 1102-1103	Journal
56	1995	"On the Interface Resistance of Regrwon GaInAs on InP", K. Hiziloglu, M.M. Hashemi, S.P. DenBaars, and U.K. Mishra	Solid State Electronics, V38, N4: 905-908	Journal
57	1995	"Structural Evolution in Epitaxial Metalorganic Chemical Vapor Deposition Grown GaN Films on Sapphire", D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck	Applied Physics Letters, v67, N11: 1541-1543	Journal
58	1995	"InP as Self Assembled Quantum Structures", C.M. Reaves, N.A. Cevallos, G.C. Hsueh, Y.M. Cheng, W.H. Weinberg, P.M. Petroff, and S.P. DenBaars	Proceeding of the Seventh International Conference on Indium Phosphide and Related Materials.	Conference Proceedings
59	1995	"Nanoscale characterization of InP islands on InGaP(001)", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg	OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), vol. 5, 36-38	Journal
60	1993	“Luminescence Enhancement of InGaAs/InP Surface Quantum Wells by Room –Temperature Ion-Gun “, Y.L. Chang, I.H. Tan. C.M. Reaves, J. Merz, E. Hu, and S.P. DenBaars	Phys. Rev. Letters.	Journal
61	1994	“GaInAs/GaInP Double Barrier Structure: Growth and Application to Tunneling Devices”, C.M. Reaves, J. Yen, M.S. Leonard, A.L. Holmes, U.K. Mishra, S.P. DenBaars	Materials Res. Soc., 1994, 147-152	Conference Proceedings
62	1995	"MOCVD Growth of High Optical Quality and High Mobility GaN", B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars	Journal Electronic Materials, Nov. 1995 V24 N11:1707-1709.	Journal
63	1996	"The Role of Threading Dislocation Structure on the X-Ray Diffraction Peak Widths in Epitaxial GaN Films", B. Heying, X. H. Wu, S. Keller, Y. Li, D Kapolnek, B. Keller, S. P. DenBaars, J. S. Speck	Applied Physics Letters, 29 Jan. 1996, V68 N5:643-645	Journal

64	1995	"Growth and Characterization of InGaN/GaN Double Heterostructure LEDs Grown by MOCVD", S. Keller, B. P. Keller, Y.-F. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. K. Mishra, S. P. DenBaars	Special Issue on Proceedings of Topical Workshop on III-V Nitrides Pergamon.	Conference Proceedings
65	1995	"Effects of Deposition Rate on the Size of Self-Assembled InP Islands Formed on GaInP/GaAs(100)", C.M. Reaves, V. Bressler-Hill, W.H. Weinberg, and S.P. DenBaars	Journal of Electronic Materials, Nov. 1995, V24, N11:1605-1609	Journal
66	1995	"Characterization of InP Islands on InGaP/GaAs(001): Effect of Deposition Temperature", V. Bressler-Hill, C.M. Reaves, S. Varma, S.P. DenBaars, and W.H. Weinberg	Surface Science, Nov 1, 1995, V341 N1-2: 29-39	Journal
67	1996	"Influence of Sapphire Nitridation on Properties of Gallium Nitride Grown by Metal-Organic Chemical Vapor Deposition", S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, X. H. Wu, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars	Applied Physics Letters, 11 Mar. 1996, V68 N11: 1525-1527	Journal
68	1996	"Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire", S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, S. P. DenBaars.	Japanese J. Appl. Physics, 1 March 1996, V35, N3A: L285-8.	Journal
69	1996	"Nucleation Layer Evolution in Metal-Organic Chemical Vapor Deposition Grown GaN", X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, J. S. Speck.	Applied Physics Letters, 4 March1996, V68 N10: 1371-1373.	Journal
70	1995	“High Performance AlAs/Ga/sub x/In/sub 1-x/As Resonant Tunneling Diodes by Metalorganic Chemical Vapor Deposition,” J.C. Yen, B.P. Keller, S.P. DenBaars, U.K. Mishra.	Journal of Electronic Materials, Oct. 1995. V24, N10:1387-1390.	Journal
71	1995	“Analysis of InP Etched Surfaces Using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures,” Yu, DG; Keller, B.P.; Holmes, A.L., Jr.; Hu, E.L.; and others.	Journal of Vacuum Science & Technology B, Nov-Dec. 1995, V13, N6:2381-2385.	Journal
72	1995	“Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with tertiarybutylphosphine (TBP). Itaya, K.; Holmes, A.L., Jr.; Keller, S.; Hummel, S.G.; Coldren, L.A. and DenBaars, S.P.	Japanese Journal of Applied Physics, Part 2 (Letters), 15 Nov. 1995, V34, N11B: L1540-1542.	Journal
73	1995	“From research to manufacture-the evolution of MOCVD,” Grodzinski, P.; DenBaars, S.P.; Lee, H.C.	JOM, Dec. 1995, V47, N12: pp. 25-32.	Journal
74	1996	“Field emission from selectively regrown GaN pyramids,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	IEEE, 1996, pp.152-153.	Conference Proceedings
75	1996	“GaN HFETs and MODFETs with very high breakdown voltage and large transconductance,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; Mishra, U.K. and DenBaars, S.P.	IEEE, 1996, pp. 60-61.	Conference Proceedings
76	1996	“Ion damage propagation in dry-etched InP-based structures,” Hu, E.L.; Yu, D.G.; Chen, C.-H.; Keller, B.; and DenBaars, S.P.	IEEE, 1996, pages 107-110.	Conference Proceedings
77	1996	“InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	IEEE, 1996, pp. 157-158 Volume 2.	Conference Proceedings
78	1996	“Cleaved facets in GaN by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E.; Speck, J.S. and DenBaars, S.P.	Materials Res. Soc, 1996, pp. 165-170.	Conference Proceedings
79	1996	“Long-wavelength vertical-cavity surface-emitting laser diodes,” Babic, D.I.; Jayaraman, V.; Margalit, N.M.; Streubel, K.; and DenBaars, S.P.	Materials Research. Society, 1996, pp. 63-74.	Conference Proceedings
80	1996	“Absolute internal quantum efficiency of an InGaN/GaN quantum well,” Reese, C.; Yablonovitch, E.; Keller, S.; Keller, B.; Mishra, U.K. and DenBaars, S.P.	Opt. Soc. America, 1996, p. 472.
81	1996	“InP-based devices and their applications for merged FET-HBT technologies,” Parikh, P.; Kiziloglu, K.; Mondry, M.; Chavarkar, P.; Mishra, U. and DenBaars, S.	Microwave and Optical Technology Letters, 20 Feb. 1996, V11, N3: pp. 121-125.	Journal
82	1996	“Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP.” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Electronics Letters, 14 March 1996, V32, N6: pp. 593-594.	Journal
83	1996	“Low interface trap density for remote plasma deposited SiO/sub 2/ on n-type GaN,” Casey, H.C., Jr.; Fountain, G.G.; Alley, R.G.; Keller, B.P.; and DenBaars, S.	Applied Physics Letters, 25 March 1996, V68, N13: pp. 1850-1852.	Journal
84 (a)	1996	“Cleaved GaN facets by wafer fusion of GaN to InP,” Sink, R.K.; Keller, S.; Keller, B.P.; Babic, D.I.; Bowers, J.E. and DenBaars, S.P.	Applied Physics Letters, 8 April 1996, V68, N15: pp. 2147-2149.	Journal
84 (b)	1996	“Growth and Characterization of bulk InGaN films and quantum wells” S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. DenBaars	Applied Physics Letters, 27 May 1996, V68, N22: pp. 3147-3149	Journal
85	1996	“InP-based multiple quantum well structures grown with tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP): effects of growth interruptions on structural and optical properties. Holmes, A.L., Jr.; Heimbuch, M.E.; Fish, G.; Coldren, L.A.; and DenBaars, S.P.	Journal of Electronic Materials, June 1996, V25, N6: pp. 965-971.	Journal
86	1996	“A new FET-based integrated circuit technology: the SASSFET,” Parikh, P.A.; Jiang, W.N.; Chavarkar, P.M.; Kiziloglu, K.; Mishra,, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, July 1996, V17, N7: pp. 375-357.	Journal
87	1996	“Photocurrent decay in n-type GaN thin films,” Qiu, C.H.; Melton, W.; Leksono, M.W.; Pankove, J.I.; Keller, B.P. and DenBaars, S.P.	Applied Physics Letters, 26 August 1996, V69, N9: pp. 1282-1284.	Journal
88	1996	“InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range,” Jan, Y.-H.; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Electronics Letters, 29 Aug. 1996, V32, N18: pp. 1697-1699.	Journal
89	1996	“Control of III-V epitaxy in a metalorganic chemical vapor deposition process: impact of source flow control on composition and thickness,” Gaffney, M.; Reaves, C.M.; Smith, R.S.; Holmes, A.L., Jr.; and DenBaars, S.P.	Journal of Crystal Growth, Sept. 1996, V167, N1-2: pp. 8-16.	Journal
90	1996	“Measured microwave power performance of AlGaN/GaN MODFET,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.	IEEE Electron Device Letters, Sept. 1996, V17, N9: pp. 455-457.	Journal
91	1996	“Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors,” Wu, Y.-F.; Keller, B.P.; Keller, S.; Kapolnek, D.; and DenBaars, S.P.	Applied Physics Letters, 2 Sept. 1996, V69, N10: pp. 1438-1440.	Journal
92	1996	“Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/,” Wu, X.H.; Brown, L.M.; Kapolnek, D.; Keller, S.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.	Journal of Applied Physics, 15 Sept. 1996, V80, N6: pp. 3228-3237.	Journal
93	1996	“Radiative recombination lifetime measurements of InGaN single quantum well,” Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M.; Bowers, J.E. & DenBaars, S.P.	Applied Physics Letters, 23 Sept. 1996, V69, N13: pp. 1936-1938.	Journal
94	1996	“Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100),” Hsueh, G.C.; Reaves, C.M.; DenBaars, S.P.; Weinberg, W.H.	Surface Science, 10 Oct. 1996, V366, N1: pp. 129-139.	Journal
95	1996	“High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts,” Shealy, J.B.; Matloubian, M.; Liu, T.Y.; Thompson, M.A.; Mishra, U.K. and DenBaars, S.P.	IEEE Electron Device Letters, Nov. 1996, V17, N11: pp. 540-542.	Journal
96	1996	“Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy,” O'Shea, J.J.; Reaves, C.M.; DenBaars, S.P.; Chin, M.A.; and Narayanamurti, V.	Applied Physics Letters, 11 Nov. 1996, V69, N20: pp. 3022-3024.	Journal
97	1996	“45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver,” Yu-Heng Jan; Heimbuch, M.E.; Coldren, L.A.; DenBaars, S.P.	Applied Physics Letters, 18 Nov. 1996, V69, N21: pp. 3131-3133.	Journal
98	1996	“Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition,” Wu, X.H.; Fini, P.; Keller, S.; Tarsa, E.J.; Speck, J.S.: Mishra, U.K. and DenBaars, S.P.	Japanese Journal of Applied Physics, Part 2 (Letters), 15 Dec. 1996, V35, N12B: L1648-1651	Journal
99	1996	“Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface,” Reaves, C.M.; Pelzel, R.I.; Hsueh, G.C.; Weinberg, W.H.; and DenBaars, S.P.	Applied Physics Letters, 16 Dec. 1996, V69, N25: pp. 3878-3880.	Journal
100	1996	“Real-time composition and thickness control techniques in a metalorganic chemical vapor deposition process,” Gaffney, M.S.; Reaves, C.M.; Holmes, A.L., Jr.; Smith, R.S.; and DenBaars, S.P.	Materials Res. Soc, 1996. pp. 133-138.	Conference Proceedings
101	1997	“Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition,” Keller, S.; Keller, B.; Kapolnek, D.; Mishra, U.; & DenBaars, S.	Journal of Crystal Growth, Jan. 1997, V170, N1-4: pp. 349-352.	Journal
102	1997	“Selective area epitaxy of GaN for electron field emission devices,” Kapolnek, D.; Underwood, R.D.; Keller, B.P.; Keller, S.; and Mishra, U.K. and DenBaars, S.P.	Journal of Crystal Growth, Jan. 1997, V170, N.1-4: pp. 340-343.	Journal
103	1997	“Ballistic electron emission microscopy study of transport in GaN thin films,” Brazel, E.G.; Chin, M.A.; Narayanamurti, V.; Kapolnek, D.; and Mishra, U.K. and DenBaars, S.P.	Applied Physics Letters, 20 Jan. 1997, V70, N3: pages 330-332.	Journal
104	1997	“Selective-area regrowth of GaN field emission tips,” Underwood, R.D.; Kapolnek, D.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	Solid-State Electronics, Feb. 1997, V41, N2: pp. 243-245.	Journal
105	1997	“Low resistance ohmic contact to n-GaN with a separate layer method,” Wu, Y.-F.; Jiang, W.-N.; Keller, B.P.; Keller, S.; Mishra, U.K. and DenBaars, S.P.	Solid-State Electronics, Feb. 1997, V41, N2: pp. 165-168.	Journal
106	1997	“Comparing ion damage in GaAs and InP,” Yu, D.G.; Chen, C.-H.; Holmes, A.L., Jr.; Hu, E.L.; and DenBaars, S.P.	Microelectronic Engineering, Feb. 1997, V35, N1-4: pp. 95-98.	Journal
107	1997	“GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage,” Nguyen, N.X.; Keller, B.P.; Keller, S.; Wu, Y.-F.; Mishra, U.K. and DenBaars, S.P.	Electronics Letters, 13 Feb. 1997, V33, N4: pp. 334-335.	Journal
108	1997	“Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration,” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Krishnankutty, S.; Keller, S.; Abare, A.; Coldren, L.; Mishra, U. & DenBaars, S.	Journal of Applied Physics, 15 Feb. 1997, V81, N4: pp. 2021-2023.	Journal
109	1997	“Accurate mobility and carrier concentration analysis for GaN,” Look, D.C.; Sizelove, J.R.; Keller, S.; Wu, Y.F.; Mack, M.; Mishra, U.K. & DenBaars, S.P.	Solid State Communications, April 1997, V102, N4: pp. 297-300.	Journal
110	1997	“Femtosecond studies of carrier dynamics in InGaN,” Sun, C.-K.; Vallee, F.; Keller, S.; Bowers, J.E.; and DenBaars, S.P.	Applied Physics Letters, 14 April 1997, V70, N15: pp. 2004-2006.	Journal
111	1997	“Gain spectroscopy on InGaN/GaN quantum well diodes,” Kuball, M.; Jeon, E.S.; Song, Y.-K.; Nurmikko, A.V.; Keller, S.; Kozodoy, P.; Steigeruald, D,; Mishra, U.K. and DenBaars, S.P.