No. |
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Year |
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Authors and Title |
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Publisher |
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Category |
1. |
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1989 |
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S. Nakamura, S. Sakai, S.S. Chang, R.V. Ramaswamy, J.-H. Kim, G. Radhakrishnan, J.K. Liu, J. Katz “Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy” |
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J. Cryst. Growth, Vol. 97, pp. 303-309 |
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Journal |
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2. |
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1990 |
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S. Nakamura, H. Takagi “High-power and high-efficiency P-GaAlAs/N-GaAs: Si single herterostucture infrared emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 29 No. 12, pp. 2694-2697 |
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Journal |
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3. |
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1991 |
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S. Nakamura, Y. Harada, M. Senoh “Novel metalorganic chemical vapor deposition system for GaN growth” |
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Appl. Phys. Lett., Vol. 58 No. 18, pp. 2021-2023 |
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Journal |
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4. |
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1991 |
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S. Nakamura “Analysis of real-time monitoring using interference effects” |
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Jpn. J. Appl. Phys., Vol. 30 No. 7, pp.1348-1353 |
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Journal |
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5. |
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1991 |
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S. Nakamura “In situ monitoring of GaN growth using interference effects” |
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Jpn. J. Appl. Phys., Vol. 30 No. 8, pp. 1620-1628 |
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Journal |
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6. |
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1991 |
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S. Nakamura “GaN growth using GaN buffer layer” |
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Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp. L1705-L1707 |
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Journal |
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7. |
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1991 |
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S. Nakamura, M. Senoh, T. Mukai “Highly P-typed Mg-doped GaN films grown with GaN buffer layers” |
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Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp.L1708-L1711 |
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Journal |
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8. |
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1991 |
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S. Nakamura, T. Mukai, M. Senoh “High-power GaN P-N junction blue-light-emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 30 No. 12A, pp. L1998-L2001 |
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Journal |
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9. |
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1992 |
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S. Nakamura, T. Mukai, M. Senoh, N. Iwasa “Thermal annealing effects on P-type Mg-doped GaN films” |
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Jpn. J. Appl. Phys., Vol. 31 No. 2B, pp. L139-L142 |
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Journal |
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10. |
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1992 |
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S. Nakamura, N. Iwasa, M. Senoh, T. Mukai “Hole compensation mechanism of P-type GaN films” |
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Jpn. J. Appl. Phys., Vol. 31 No. 5A, pp. 1258-1266 |
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Journal |
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11. |
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1992 |
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S. Nakamura, T. Mukai, M. Senoh “In situ monitoring and hall measurements of GaN growth with GaN buffer layers” |
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J. Appl. Phys., Vol. 71, No. 11, pp. 5543-5549 |
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Journal |
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12. |
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1992 |
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S. Nakamura, T. Mukai, M. Senoh “Si- and Ge-doped GaN films grown with GaN buffer layers” |
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Jpn. J. Appl. Phys., Vol. 31 No. 9A, pp. 2883-2888 |
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Journal |
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13. |
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1992 |
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S. Nakamura, T. Mukai “High-quality InGaN films grown on GaN films” |
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Jpn. J. Appl. Phys., Vol. 31 No. 10B, pp. L1457-L1459 |
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Journal |
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14. |
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1993 |
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S. Nakamura, M. Senoh, T. Mukai “p-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 32 No. 1A/B. pp. L8-L11 |
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Journal |
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15. |
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1993 |
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S. Nakamura, T. Mukai, M. Senoh “Si-doped InGaN films grown on GaN films” |
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Jpn. J. Appl. Phys., Vol. 32 No. 1A/B, pp. L16-L19 |
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Journal |
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16. |
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1993 |
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S. Nakamura, N. Iwasa, S. Nagahama “Cd-doped InGaN films grown on GaN films” |
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Jpn. J. Appl. Phys., Vol. 32 No. 3A, pp. L338-L341 |
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Journal |
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17. |
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1993 |
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S. Nakamura, M. Senoh, T. Mukai “High-power InGaN/GaN double-heterostructure violet light-emitting diodes” |
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Appl. Phys. Lett., Vol. 62 No. 19, pp. 2390-2392 |
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Journal |
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18. |
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1993 |
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S. Nakamura “InGaN blue-light-emitting diodes” |
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Journal of the Institute of Electronics, Information and Communication Engineers, Vol. 76 No. 9, pp. 3911-3915 |
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Journal |
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19. |
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1993 |
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S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, N. Iwasa “In/sub x-Ga/sub (1-x)-N/In/sub y-Ga/sub (1-y)-N superlattices grown on GaN films” |
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J. Appl. Phys., Vol. 74 No. 6, pp. 3911-3915 |
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Journal |
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20. |
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1994 |
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S. Nakamura “Blue LEDs, realization of LCD by double-heterostructure” |
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No. 602, pp. 93-102 |
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21. |
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1994 |
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S. Nakamura, T. Mukai, M. Senoh “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes” |
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Appl. Phys. Lett., Vol. 64 No. 13, pp. 1687-1689 |
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Journal |
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22 |
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1994 |
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S. Nakamura “Nichia’s 1cd blue LED paves way for full-color display” |
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Nikkei Electronics Asia, June 1994 |
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Magazine |
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23. |
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1994 |
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S. Nakamura “InGaN/AlGaN double-heterostructure light-emitting diodes” |
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Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, JSAP, pp. 81-83 |
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Conference Proceeding |
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24. |
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1994 |
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S. Nakamura “Realized high bright blue laser-emitting diodes” |
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Scientific American, October 1994 |
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Magazine |
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25. |
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1994 |
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S. Nakamura “Growth of In/sub x-Ga/sub (1-x)-N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting-diodes” |
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Microelectronics Journal, Vol. 25, pp. 651-659 |
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Journal |
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26. |
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1994 |
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S. Nakamura “Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes” |
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J. Cryst. Growth, Vol. 145, pp. 911-917 |
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Journal |
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27. |
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1994 |
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S. Nakamura “InGaN/AlGaN double-heterostructure blue LEDs” |
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Mat. Res. Symp. Proc., Vol. 339, pp. 173-178 |
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Journal |
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28. |
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1994 |
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S. Nakamura, T. Mukai, M. Senoh “High-brightness InGaN/AlGaN double heterostructure blue-green-light-emitting diodes” |
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J. Appl. Phys., Vol. 76, pp. 8189-8191 |
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Journal |
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29. |
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1995 |
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S. Chichibu, T. Azhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers” |
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J. Appl. Phys., Vol. 79 No. 5, pp. 2784-2786 |
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Journal |
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30. |
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1995 |
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S. Nakamura “Highly luminous III-V nitride-based devices head for the highway, color displays” |
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IEEE, May 1995 |
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Journal |
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31. |
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1995 |
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S. Nakamura “InGaN/AlGaN blue-light-emitting diodes” |
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J. Vac. Sci. & Tech. A, Vol. 13 No. 3, pp. 705-710 |
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Journal |
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32. |
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1995 |
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S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures” |
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Jpn. J. Appl. Phys., Vol. 34 No. 7A, pp. L797-L799 |
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Journal |
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33. |
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1995 |
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S. Nakamura “LED full color display” |
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IEICE, Vol. 78, No. 7, pp. 683-688 |
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Journal |
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34. |
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1995 |
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S. Nakamura “InGaN light-emitting diodes with quantum well structures” |
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Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials 08/21-24/95, Osaka, Japan (JSAP) |
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Conference Proceeding |
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35. |
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1995 |
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S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Y. Yamada, T. Mukai “Superbright green InGaN single-quantum-well structure light-emitting diodes” |
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Jpn. J. Appl. Phys., Vol. 34 No. 10B, pp. L1332-L1335 |
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Journal |
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36. |
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1995 |
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S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes’ |
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Appl. Phys. Lett., Vol. 67 No. 13, pp. 1868-1870 |
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Journal |
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37. |
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1995 |
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S. Nakamura “Laser diodes and progress of InGaN-based IV-V system LED” |
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Optik, Vol. 24, No. 11, pp. 673-678 |
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Journal |
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38. |
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1995 |
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T. Azuhata, T. Soto, K. Suzuki, S. Nakamura “Polarized Raman Spectra in GaN” |
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J. Phys. Condens. Matter, Vol. 7 No. 10, pp. L129-L133 |
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Journal |
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39. |
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1995 |
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S. Nakamura “III-V Nitride light-emitting diodes” |
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OSA Proceedings on Advanced Solid-State Lasers, Vol. 24, pp. 20-24 |
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Journal |
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40. |
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1995 |
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W.E. Carlos, E.R. Glaser, T.A. Kennedy, S. Nakamura “Paramagnetic resonance in GaN-based light emitting diodes” |
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Appl. Phys. Lett., Vol. 67 No. 16, pp. 2376-2378 |
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Journal |
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41. |
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1995 |
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S. Nakamura “Recent developments of GaN based LEDs” |
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Proceedings of Topical Workshop on III-V Nitrides, pp. 11-14 |
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Conference Proceedings |
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42. |
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1996 |
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S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Contribution of excitons in the photoluminescence spectra of h-GaN epitaxial layers grown on sapphire substrates by TF-MOCVD” |
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International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 202-205 |
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Conference Proceedings |
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43. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN-based multi-quantum-well-structure laser diodes” |
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Jpn. J. Appl. Phys., Vol. 35 No. 1B, pp. L74-L76 |
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Journal |
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44. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets” |
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Jpn. J. Appl. Phys., Vol. 35 No. 2B, pp. L217-L220 |
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Journal |
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45. |
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1996 |
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S. Nakamura “Pulsed operation of violet laser diodes” |
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Electr. Mater.,March issue, pp. 159-164 |
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Journal |
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46. |
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1996 |
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S. Nakamura, N. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well structure laser diodes grown on MgAl(sub 2)O(sub 4) substrates” |
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Appl. Phys. Lett., Vol. 68 No. 15, pp. 2105-2107 |
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Journal |
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47. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “Characteristics of InGaN multi-quantum-well-structure laser diodes” |
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Appl. Phys. Lett., Vol. 68 No. 23, pp. 3269-3271 |
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Journal |
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48. |
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1996 |
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S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura “Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers” |
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Appl. Phys. Lett., Vo. 68 No. 26, pp. 3766-3768 |
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Journal |
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49. |
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1996 |
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S. Nakamura “InGaN-based blue/green LEDs and laser diodes” |
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Adv. Mater., Vol. 8 No. 8, pp. 689-692 |
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Journal |
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50. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233K” |
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Appl. Phys. Lett., Vol. 69 No. 20, pp. 3034-3036 |
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Journal |
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51. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes” |
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Appl. Phys. Lett., Vol. 69 No. 26, pp. 4056-4058 |
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Journal |
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52. |
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1996 |
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S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures” |
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Appl. Phys. Lett., Vol. 69 No. 27, pp. 4188-4190 |
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Journal |
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53. |
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1996 |
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S. Nakamura “Present status and future prospects of GaN-based light emitting devices” |
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Jpn. Soc. Appl. Phys., Vol. 65 No. 7, pp. 676-685 |
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Journal |
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54. |
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1996 |
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T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura “Optical phonons in GaN” |
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Physica B, Vol. 219-220, pp. 493-495 |
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Journal |
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55. |
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1996 |
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S. Nakamura “Fabrication of blue and green nitride light-emitting diodes” |
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Inst. Phys. Conf. Ser. No. 142, Chapter 6 |
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Conference Proceeding |
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56. |
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1996 |
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S. Nakamura “III-V nitride-based light-emitting diodes” |
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Diamond and Related Materials, Vol. 5 Issue 1-3, pp. 496-500 |
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Journal |
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57. |
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1996 |
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Y. Kawakami, Z.G. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of excitons and biexcitons in hexagonal GaN epitaxial layer” |
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Appl. Phys. Lett., Vol. 69 No. 10, pp. 1414-1416 |
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Journal |
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58. |
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1996 |
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K. Okada, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Biexciton luminescence from GaN epitaxial layers” |
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Jpn. J. Appl. Phys., Vol. 35 No. 6B, pp. L787-L789 |
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Journal |
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59. |
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1996 |
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W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN light-emitting diodes” |
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Mat. Res. Soc. Symp. Proc. 395, pp. 673-678 |
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Conference Proceedings |
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60. |
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1996 |
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S. Nakamura “InGaN light-emitting diodes with quantum-well structures” |
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Mat. Res. Soc. Symp. Proc. 395, pp. 879-887 |
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Conference Proceedings |
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61. |
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1996 |
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S. Nakamura “High-brightness blue-green LEDs and first III-V nitride-based laser diodes” |
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Proceedings of SPIE, Vol. 2693, pp. 43-56 |
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Conference Proceedings |
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62. |
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1996 |
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T. Taguchi, T. Maeda, Y. Yamada, S. Nakamura, G. Shinomiya “Band edge emission of InGaN active epilayers in the high-brightness Nichia blue LEDs” |
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International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 372-374 |
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Conference Proceedings |
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63. |
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1996 |
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S. Nakamura “First successful III-V nitride based laser diodes” |
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International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 119-124 |
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Conference Proceedings |
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64. |
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1996 |
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes” |
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Appl. Phys. Lett., Vol. 69 No. 11, pp. 1568-1570 |
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Journal |
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65. |
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1996 |
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S. Nakamura “III-V nitride based blue/green LEDs and LDs” |
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23rd ICPS Proc., Berlin, July 21-26, Vol. 1, pp. 11-18 |
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Conference Proceedings |
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66. |
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1996 |
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T. Taguchi, Y. Yamada, K. Okada, T. Maeda, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Time-resolved luminescence spectroscopy of GaN and InGaN epitaxial layers under high density excitation” |
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23rd ICPS Proc.,Berlin, July 21-26, Vol. 1, pp. 541-544 |
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Conference Proceedings |
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