No.

 

Year

 

Authors and Title

 

Publisher

 

Category

1.

 

1989

 

S. Nakamura, S. Sakai, S.S. Chang, R.V. Ramaswamy, J.-H. Kim, G. Radhakrishnan, J.K. Liu, J. Katz “Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy”

 

J. Cryst. Growth, Vol. 97, pp. 303-309

 

Journal

 

 

 

 

 

 

 

 

 

2.

 

1990

 

S. Nakamura, H. Takagi “High-power and high-efficiency P-GaAlAs/N-GaAs: Si single herterostucture infrared emitting diodes”

 

Jpn. J. Appl. Phys., Vol. 29 No. 12, pp. 2694-2697

 

Journal

 

 

 

 

 

 

 

 

 

3.

 

1991

 

S. Nakamura, Y. Harada, M. Senoh “Novel metalorganic chemical vapor deposition system for GaN growth”

 

Appl. Phys. Lett., Vol. 58 No. 18, pp. 2021-2023

 

Journal

 

 

 

 

 

 

 

 

 

4.

 

1991

 

S. Nakamura “Analysis of real-time monitoring using interference effects”

 

Jpn. J. Appl. Phys., Vol. 30 No. 7, pp.1348-1353

 

Journal

 

 

 

 

 

 

 

 

 

5.

 

1991

 

S. Nakamura “In situ monitoring of GaN growth using interference effects”

 

Jpn. J. Appl. Phys., Vol. 30 No. 8, pp. 1620-1628

 

Journal

 

 

 

 

 

 

 

 

 

6.

 

1991

 

S. Nakamura “GaN growth using GaN buffer layer”

 

Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp. L1705-L1707

 

Journal

 

 

 

 

 

 

 

 

 

7.

 

1991

 

S. Nakamura, M. Senoh, T. Mukai “Highly P-typed Mg-doped GaN films grown with GaN buffer layers”

 

Jpn. J. Appl. Phys., Vol. 30 No. 10A, pp.L1708-L1711

 

Journal

 

 

 

 

 

 

 

 

 

8.

 

1991

 

S. Nakamura, T. Mukai, M. Senoh “High-power GaN P-N junction blue-light-emitting diodes”

 

Jpn. J. Appl. Phys.,  Vol. 30 No. 12A, pp. L1998-L2001

 

Journal

 

 

 

 

 

 

 

 

 

9.

 

1992

 

S. Nakamura, T. Mukai, M. Senoh, N. Iwasa “Thermal annealing effects on P-type Mg-doped GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 2B, pp. L139-L142

 

Journal

 

 

 

 

 

 

 

 

 

10.

 

1992

 

S. Nakamura, N. Iwasa, M. Senoh, T. Mukai “Hole compensation mechanism of P-type GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 5A, pp. 1258-1266

 

Journal

 

 

 

 

 

 

 

 

 

11.

 

1992

 

S. Nakamura, T. Mukai, M. Senoh “In situ monitoring and hall measurements of GaN growth with GaN buffer layers”

 

J. Appl. Phys.,  Vol. 71,

No. 11, pp. 5543-5549

 

Journal

 

 

 

 

 

 

 

 

 

12.

 

1992

 

S. Nakamura, T. Mukai, M. Senoh “Si- and Ge-doped GaN films grown with GaN buffer layers”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 9A, pp. 2883-2888

 

Journal

 

 

 

 

 

 

 

 

 

13.

 

1992

 

S. Nakamura, T. Mukai “High-quality InGaN films grown on GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 31 No. 10B, pp. L1457-L1459

 

Journal

 

 

 

 

 

 

 

 

 

14.

 

1993

 

S. Nakamura, M. Senoh, T. Mukai “p-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes”

 

Jpn. J. Appl. Phys.,  Vol. 32 No. 1A/B. pp. L8-L11

 

Journal

 

 

 

 

 

 

 

 

 

15.

 

1993

 

S. Nakamura, T. Mukai, M. Senoh “Si-doped InGaN films grown on GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 32 No. 1A/B, pp. L16-L19

 

Journal

 

 

 

 

 

 

 

 

 

16.

 

1993

 

S. Nakamura, N. Iwasa, S. Nagahama “Cd-doped InGaN films grown on GaN films”

 

Jpn. J. Appl. Phys.,  Vol. 32 No. 3A, pp. L338-L341

 

Journal

 

 

 

 

 

 

 

 

 

17.

 

1993

 

S. Nakamura, M. Senoh, T. Mukai “High-power InGaN/GaN double-heterostructure violet light-emitting diodes”

 

Appl. Phys. Lett., Vol. 62 No. 19, pp. 2390-2392

 

Journal

 

 

 

 

 

 

 

 

 

18.

 

1993

 

S. Nakamura “InGaN blue-light-emitting diodes”

 

Journal of the Institute of Electronics, Information and Communication Engineers, Vol. 76 No. 9, pp. 3911-3915

 

Journal

 

 

 

 

 

 

 

 

 

19.

 

1993

 

S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, N. Iwasa “In/sub x-Ga/sub (1-x)-N/In/sub y-Ga/sub (1-y)-N superlattices grown on GaN films”

 

J. Appl. Phys.,  Vol. 74

No. 6, pp. 3911-3915

 

Journal

 

 

 

 

 

 

 

 

 

20.

 

1994

 

S. Nakamura “Blue LEDs, realization of LCD by double-heterostructure”

 

No. 602, pp. 93-102

 

 

 

 

 

 

 

 

 

 

 

21.

 

1994

 

S. Nakamura, T. Mukai, M. Senoh “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes”

 

Appl. Phys. Lett.,  Vol. 64 No. 13, pp. 1687-1689

 

Journal

 

 

 

 

 

 

 

 

 

22

 

1994

 

S. Nakamura “Nichia’s 1cd blue LED paves way for full-color display”

 

Nikkei Electronics Asia, June 1994

 

Magazine

 

 

 

 

 

 

 

 

 

23.

 

1994

 

S. Nakamura “InGaN/AlGaN double-heterostructure light-emitting diodes”

 

Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, JSAP, pp. 81-83

 

Conference Proceeding

 

 

 

 

 

 

 

 

 

24.

 

1994

 

S. Nakamura “Realized high bright blue laser-emitting diodes”

 

Scientific American, October 1994

 

Magazine

 

 

 

 

 

 

 

 

 

25.

 

1994

 

S. Nakamura “Growth of In/sub x-Ga/sub (1-x)-N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting-diodes”

 

Microelectronics Journal,  Vol. 25, pp. 651-659

 

Journal

 

 

 

 

 

 

 

 

 

26.

 

1994

 

S. Nakamura “Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes”

 

J. Cryst. Growth,  Vol. 145, pp. 911-917

 

Journal

 

 

 

 

 

 

 

 

 

27.

 

1994

 

S. Nakamura “InGaN/AlGaN double-heterostructure blue LEDs”

 

Mat. Res. Symp. Proc.,  

Vol. 339, pp. 173-178

 

Journal

 

 

 

 

 

 

 

 

 

28.

 

1994

 

S. Nakamura, T. Mukai, M. Senoh “High-brightness InGaN/AlGaN double heterostructure blue-green-light-emitting diodes”

 

J. Appl. Phys., Vol. 76, pp. 8189-8191

 

Journal

 

 

 

 

 

 

 

 

 

29.

 

1995

 

S. Chichibu, T. Azhata, T. Sota, S. Nakamura “Excitonic emissions from hexagonal GaN epitaxial layers”

 

J. Appl. Phys.,  Vol. 79

No. 5, pp. 2784-2786

 

Journal

 

 

 

 

 

 

 

 

 

30.

 

1995

 

S. Nakamura “Highly luminous III-V nitride-based devices head for the highway, color displays”

 

IEEE, May 1995

 

Journal

 

 

 

 

 

 

 

 

 

31.

 

1995

 

S. Nakamura “InGaN/AlGaN blue-light-emitting diodes”

 

J. Vac. Sci. & Tech. A, 

Vol. 13 No. 3, pp. 705-710

 

Journal

 

 

 

 

 

 

 

 

 

32.

 

1995

 

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures”

 

Jpn. J. Appl. Phys.,  Vol. 34 No. 7A, pp. L797-L799

 

Journal

 

 

 

 

 

 

 

 

 

33.

 

1995

 

S. Nakamura “LED full color display”

 

IEICE, Vol. 78, No. 7, pp. 683-688

 

Journal

 

 

 

 

 

 

 

 

 

34.

 

1995

 

S. Nakamura “InGaN light-emitting diodes with quantum well structures”

 

Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials 08/21-24/95, Osaka, Japan (JSAP)

 

Conference Proceeding

 

 

 

 

 

 

 

 

 

35.

 

1995

 

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Y. Yamada, T. Mukai “Superbright green InGaN single-quantum-well structure light-emitting diodes”

 

Jpn. J. Appl. Phys.,  Vol. 34 No. 10B, pp. L1332-L1335

 

Journal

 

 

 

 

 

 

 

 

 

36.

 

1995

 

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes’

 

Appl. Phys. Lett.,  Vol. 67 No. 13, pp. 1868-1870

 

Journal

 

 

 

 

 

 

 

 

 

37.

 

1995

 

S. Nakamura “Laser diodes and progress of InGaN-based IV-V system LED”

 

Optik, Vol. 24, No. 11, pp. 673-678

 

Journal

 

 

 

 

 

 

 

 

 

38.

 

1995

 

T. Azuhata, T. Soto, K. Suzuki, S. Nakamura “Polarized Raman Spectra in GaN”

 

J. Phys. Condens. Matter,  Vol. 7 No. 10, pp. L129-L133

 

Journal

 

 

 

 

 

 

 

 

 

39.

 

1995

 

S. Nakamura “III-V Nitride light-emitting diodes”

 

OSA Proceedings on Advanced Solid-State Lasers,  Vol. 24, pp. 20-24

 

Journal

 

 

 

 

 

 

 

 

 

40.

 

1995

 

W.E. Carlos, E.R. Glaser, T.A. Kennedy, S. Nakamura “Paramagnetic resonance in GaN-based light emitting diodes”

 

Appl. Phys. Lett., Vol. 67 No. 16, pp. 2376-2378

 

Journal

 

 

 

 

 

 

 

 

 

41.

 

1995

 

S. Nakamura “Recent developments of GaN based LEDs”

 

Proceedings of Topical Workshop on III-V Nitrides, pp. 11-14

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

42.

 

1996

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Contribution of excitons in the photoluminescence spectra of h-GaN epitaxial layers grown on sapphire substrates by TF-MOCVD”

 

International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 202-205

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

43.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN-based multi-quantum-well-structure laser diodes”

 

Jpn. J. Appl. Phys., Vol. 35 No. 1B, pp. L74-L76

 

Journal

 

 

 

 

 

 

 

 

 

44.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets”

 

Jpn. J. Appl. Phys.,  Vol. 35 No. 2B, pp. L217-L220

 

Journal

 

 

 

 

 

 

 

 

 

45.

 

1996

 

S. Nakamura “Pulsed operation of violet laser diodes”

 

Electr. Mater.,March issue, pp. 159-164

 

Journal

 

 

 

 

 

 

 

 

 

46.

 

1996

 

S. Nakamura, N. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “InGaN multi-quantum-well structure laser diodes grown on MgAl(sub 2)O(sub 4) substrates”

 

Appl. Phys. Lett.,  Vol. 68 No. 15, pp. 2105-2107

 

Journal

 

 

 

 

 

 

 

 

 

47.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto “Characteristics of InGaN multi-quantum-well-structure laser diodes”

 

Appl. Phys. Lett., Vol. 68 No. 23, pp. 3269-3271

 

Journal

 

 

 

 

 

 

 

 

 

48.

 

1996

 

S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura “Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers”

 

Appl. Phys. Lett., Vo. 68

No. 26, pp. 3766-3768

 

Journal

 

 

 

 

 

 

 

 

 

49.

 

1996

 

S. Nakamura “InGaN-based blue/green LEDs and laser diodes”

 

Adv. Mater.,  Vol. 8 No. 8, pp. 689-692

 

Journal

 

 

 

 

 

 

 

 

 

50.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233K”

 

Appl. Phys. Lett., Vol. 69 No. 20, pp. 3034-3036

 

Journal

 

 

 

 

 

 

 

 

 

51.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushito, Y. Sugimoto, H. Kiyoku “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes”

 

Appl. Phys. Lett.,  Vol. 69 No. 26, pp. 4056-4058

 

Journal

 

 

 

 

 

 

 

 

 

52.

 

1996

 

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures”

 

Appl. Phys. Lett., Vol. 69 No. 27, pp. 4188-4190

 

Journal

 

 

 

 

 

 

 

 

 

53.

 

1996

 

S. Nakamura “Present status and future prospects of GaN-based light emitting devices”

 

Jpn. Soc. Appl. Phys., Vol. 65 No. 7, pp. 676-685

 

Journal

 

 

 

 

 

 

 

 

 

54.

 

1996

 

T. Azuhata, T. Matsunaga, K. Shimada, K. Yoshida, T. Sota, K. Suzuki, S. Nakamura “Optical phonons in GaN”

 

Physica B, Vol. 219-220,  pp. 493-495

 

Journal

 

 

 

 

 

 

 

 

 

55.

 

1996

 

S. Nakamura “Fabrication of blue and green nitride light-emitting diodes”

 

Inst. Phys. Conf. Ser. No. 142, Chapter 6

 

Conference Proceeding

 

 

 

 

 

 

 

 

 

56.

 

1996

 

S. Nakamura “III-V nitride-based light-emitting diodes”

 

Diamond and Related Materials,  Vol. 5 Issue 1-3, pp. 496-500

 

Journal

 

 

 

 

 

 

 

 

 

57.

 

1996

 

Y. Kawakami, Z.G. Peng, Y. Narukawa, Sz. Fujita, Sg. Fujita, S. Nakamura “Recombination dynamics of excitons and biexcitons in hexagonal GaN epitaxial layer”

 

Appl. Phys. Lett., Vol. 69 No. 10, pp. 1414-1416

 

Journal

 

 

 

 

 

 

 

 

 

58.

 

1996

 

K. Okada, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Biexciton luminescence from GaN epitaxial layers”

 

Jpn. J. Appl. Phys., Vol. 35 No. 6B, pp. L787-L789

 

Journal

 

 

 

 

 

 

 

 

 

59.

 

1996

 

W. E. Carlos, E. R. Glaser, T. A. Kennedy, S. Nakamura “Magnetic resonance studies of recombination processes in GaN light-emitting diodes”

 

Mat. Res. Soc. Symp. Proc. 395, pp. 673-678

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

60.

 

1996

 

S. Nakamura “InGaN light-emitting diodes with quantum-well structures”

 

Mat. Res. Soc. Symp. Proc. 395, pp. 879-887

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

61.

 

1996

 

S. Nakamura “High-brightness blue-green LEDs and first III-V nitride-based laser diodes”

 

Proceedings of SPIEVol. 2693, pp. 43-56

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

62.

 

1996

 

T. Taguchi, T. Maeda, Y. Yamada, S. Nakamura, G. Shinomiya “Band edge emission of InGaN active epilayers in the high-brightness Nichia blue LEDs”

 

International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 372-374

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

63.

 

1996

 

S. Nakamura “First successful III-V nitride based laser diodes”

 

International Symposium on Blue Laser and Light Emitting Diodes, March 5-7, pp. 119-124

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

64.

 

1996

 

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku “Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes”

 

Appl. Phys. Lett., Vol. 69 No. 11, pp. 1568-1570

 

Journal

 

 

 

 

 

 

 

 

 

65.

 

1996

 

S. Nakamura “III-V nitride based blue/green LEDs and LDs”

 

23rd ICPS Proc., Berlin, July 21-26, Vol. 1, pp. 11-18

 

Conference Proceedings

 

 

 

 

 

 

 

 

 

66.

 

1996

 

T. Taguchi, Y. Yamada, K. Okada, T. Maeda, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya “Time-resolved luminescence spectroscopy of GaN and InGaN epitaxial layers under high density excitation”

 

23rd ICPS Proc.,Berlin, July 21-26, Vol. 1, pp. 541-544

 

Conference Proceedings